JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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AlGaN/GaN-on-Si Power FET with Mo/Au Gate

  • Kim, Hyun-Seop (School of Electrical and Electronic Engineering, Hongik University) ;
  • Jang, Won-Ho (School of Electrical and Electronic Engineering, Hongik University) ;
  • Han, Sang-Woo (School of Electrical and Electronic Engineering, Hongik University) ;
  • Kim, Hyungtak (School of Electrical and Electronic Engineering, Hongik University) ;
  • Cho, Chun-Hyung (Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University) ;
  • Oh, Jungwoo (School of Integrated Technology, Yonsei University) ;
  • Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
  • Received : 2016.08.24
  • Accepted : 2016.10.20
  • Published : 2017.04.30
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Abstract

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

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References

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