• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Journal of the Mineralogical Society of Korea
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• v.5 no.2
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• pp.72-78
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• 1992

The Earth outer core accomodates moderately considerable amount of lighter elements than pure iron itself. Hydrogen is one of the possible candidates of minor constituents in the outer core. It would be worth while to extend for the pressure effect on the solubility of hydrogen in the metal-hydrides including iron hydride. In view of hydrogen being one of the potential substitutes for petroleum, searching a more efficient way for storing hydrogen in the form of hydrides is of considerable value. For two purposes, $TiH_2$was selected among lot of hydrides for its characteristics under pressure and temperature. There have been two kinds of experiment carried out on $TiH_2$ under different experimental conditions. As one of these attempts, polycrystalline $TiH_2$ was loaded up to 15 GPa stepwise at the constant temperature 500${\circ}$ using a piston-cylinder diamond anvil cell equipped with a miniature furnace of an electric power supply. The X-ra diffraction technique was employed on the quenched samples after the simultaneous high pressure and temperature treatments. During these high pressure-temperature runs, and irreversible phase of $TiH_2$ has been observed at the pressures higher than 11.3 GPa, which would be assigned to the orthorhombic crystal system as one of the new phase(s) of $TiH_2$. Molar volume change on this phase transition is ∼10%.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.3 no.2
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• pp.95-104
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• 2005

Effects of the aluminum melting temperature, melting time and a kind of flux agents on the distribution of surrogate nuclide were investigated in the electric furnace at the aluminum melting including surrogate radionuclides(Co, Cs, Sr) in order to establish the fundamental research of the melting technology for the metallic wastes from the decommissioning of the TRIGA research reactor. It was verified that the fluidity of aluminum melt was increased by adding flux agent but it was slightly varied according to the sort of flux agents. The results of the XRD analysis showed that the surrogate nuclides move into the slag phase and then they were combined with aluminum oxide to form more stable compound. The weight of the slag generated from aluminum melting test increased with increasing melting temperature and melting time and the increase rate of the slag depended on the kind of flux agents added in the aluminum waste. The concentration of the cobalt in the ingot phase decreased with increasing reaction temperature but it increased in the slag phase up to 90$\%$according to the experimental conditions. The volatile nuclides such as Cs and Sr considerably transferred from the ingot phase to the slag and dust phase.

• Journal of the Korean Wood Science and Technology
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• v.34 no.4
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• pp.1-8
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• 2006

Anatomy of Quercus variabilis charcoal was investigated by scanning electron microscopy. Charcoal was prepared in an electric furnace under nitrogen gas atmosphere at $400^{\circ}C$, $600^{\circ}C$, $800^{\circ}C$, and $1000^{\circ}C$ for 10 min. The structure of charcoal was significantly affected by charring temperature. In cross section, charcoal prepared at $400^{\circ}C$ exhibited a smooth clean surface. As the charring temperature increased, the surface became more rough and increasingly disrupted. The cell walls appeared homogeneous and glass-like. Ray parenchyma cells showed very little separation from each other in radial section at $400^{\circ}C$. At $600^{\circ}C$ and above there is an apparent disintegration of the middle lamella, resulting in a separation of the ray cells. The $2{\sim}4{\mu}m$ wart-like protuberances were observed on the surfaces of the parenchyma cells. These structures were seen in charcoal prepared at all temperatures. Distinctive features can be seen in multiseriate rays as large crack and split. Rhomboidal crystals in crystalliferous cells had a smooth surface at $400^{\circ}C$ and $600^{\circ}C$, but the crystals had a sponge like appearance at $800^{\circ}C$ and $1000^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.246-254
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• 2013

Translucent opal glass was fabricated in order to substitute polycarbonate diffuser of LED lighting for the purpose of improving the durability problem. Calcium phosphate was used for the opacifier of opal glass and melted at $1550^{\circ}C$ for 2 hrs in electric furnace. Because opal glass was made by phase separation and growth of opacifier grains during cooling procedure after forming of melted glass, we identified the effect of opaque properties by the change of forming and cooling temperature, as R.T. (room temperature), $850^{\circ}C$, $1100^{\circ}C$ and $1200^{\circ}C$. As the results, it had excellent optical properties for the diffuser of LED lighting in the fabricated sample of forming and cooling at $1200^{\circ}C$, with no dazzling from direct light by high haze value over 82 % and low parallel transmittance value under 10 %. For the thermal properties, it had expressed thermal expansion coefficient of $6.352{\times}10^{-6}/^{\circ}C$ and softening point of $839^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.227-234
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• 2006

Microstructures of free surface and interior of glass-ceramics obtained by heat treating silicate glass specimen containing electric arc furnace dust(EAF dust) were observed. The crystallization temperature, $T_c$ of glassy specimen was measured around $850^{\circ}C$ from the result of different thermal analysis so heat treatment temperature to obtain glass-ceramic specimen was selected as $950^{\circ}C$ for 1 hr. Glass specimens containing 50 wt% dust were amorphous, while glass specimens containing 70 wt% dust showed spinel crystal peaks in XRD results. In case of glass-ceramic specimens, spinel crystalline phase was appeared with willemite, and willemite crystal peak intensity increased with increasing dust contents. The fractured surface of glass specimens containing 50 wt% dust was smooth like mirror surface, but that containing 70 wt% dust showed spinel crystals of 10 ${\mu}m$ size in glass matrix. In case of glass-ceramic specimens, ZnO crystal particles of $2{\sim}5{\mu}m$ size were produced in free surface and glassy phase, spinel and willemite crystal phases existed in interior. There were no crystals in glasses containing 50 wt% dust, while glass containing 70 wt% dust had 14 vol% crystals. Crystallinity of glass-ceramic specimens containing 50 and 70 wt% dust were 19 and 43%, respectively. When microstructures of glass and glass-ceramic specimens were observed through SEM after TCLP experiment, glass specimens showed flaking phenomenon while glass-ceramic specimens showed a slight corrosion evidence without any cracks.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.197-206
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• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.