• Journal of Korean Society of Water and Wastewater
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• v.18 no.3
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• pp.392-400
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• 2004

This research uses the $TiO_2$/UV process to verify the most suitable condition and possibility to dispose dyeing wastewater that contains pigment and a large amount of pollutants. For this, this research has enforced experiments that compare photo adsorption, photolysis, and photo catalyst oxidation reaction, and also evaluated and analyzed the change of pH and $TiO_2$ dosage, irradiation rates of ultraviolet rays and the dosage change and injection method of $H_2O_2$. According to the results of the dyeing wastewater experiment of storehouse catalyst that uses the new form of $TiO_2$, the photo catalyst oxidation reaction proved to be more effective than photo adsorption and photolysis; 35%, 21% in the case of $TCOD_{cr}$ and 39%, 28% in the case of chromaticity. Taking into consideration the reaction time, amount of photo catalyst reaction and irradiation amount of ultraviolet rays, the decomposition efficiency of pH change proved to be most effective at pH 4. On the whole, the acidity area proved to be effective in dyeing water exclusion than neutral and alkalinity areas. Having evaluated the influence of $TiO_2$ dosage, not only does the decomposition efficiency continuously improve as the $TiO_2$ dosage increases but the shielding effect does not occur also when the $TiO_2$ is at a fixed state. The influence of ultraviolet irradiation amount concluded in the result that as the ultraviolet irradiation amount increases the decomposition efficiency continually increased, but in the case of chromaticity when the irradiation amount was higher than 37.8mW/cm2 the removal efficiency is slowed remarkably. The influence of $H_2O_2$ dosage evaluation reached the results that although the decomposition efficiency increases with the increase of $H_2O_2$ dosage, when above 150mg (total dosage: 1200mg) $H_2O_2$ consumes OH radical itself and reduces the decomposition efficiency. Also in the case of the $H_2O_2$ injection method rather than injecting in the whole amount of $H_2O_2$ (1200mg) needed at the beginning all at once, injecting divided quantities of $H_2O_2$ whenever the electric current density falls below 10mgfl reduces the wases of OH radical due to an excess of $H_2O_2$ and in tum heightens the decomposition efficiency.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.7-14
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• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of Biomedical Engineering Research
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• v.26 no.6
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• pp.393-398
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• 2005

An electromechanical type is the most useful mechanism in the various pumping mechanisms. It, however, requires a movement converting system including a ball screw, a helical cam, or a solenoid-beam spring, which makes the device complex and may lessen reliability. Thus, the authors have hypothesized that an electromagnetic actuator mechanism can eliminate the movement converting system and that thereby enhance the mechanical reliability and operative simplicity of an electro­pneumatic pump. The purpose of this study was to show a novel application of electromagnetic actuator mechanism in pulsatile pump and to provide preliminary data for further evaluations. The electromagnetic actuator consists of stators with a single winding excitation coil and movers with a high energy density neodymium-iron-boron permanent magnet. A 0.5mm diameter wire was used for the excitation coil, and 1000 turns were wound onto the stators core with parallel. A prototype of extracorporeal electro-pneumatic pump was constructed, and the pump performance tests were performed using a mock system to evaluate the efficiency of the electromagnetic actuator mechanism. When forward and backward electric currents were supplied to the excitation coil, the mover effectively moved back and forth. The nominal stroke length of the actuator was 10mm. The actuator dimension was 120mm in diameter and 65mm in height with a mass of 1.4kg. The prototype pump unit was 150mm in diameter, 150mm in thickness and 4.5kg in weight. The maximum force output was 70N at input current of 4.5A and the maximum pump rate was 150 beats per minute. The maximum output was 2.0 L/minute at a rate of 80bpm when the afterload was 100mmHg. The electromagnetic actuator mechanism was successfully applied to construct the prototype of extracorporeal electro­pneumatic pump. The authors provide the above results as a preliminary data for further studies.

• Applied Chemistry for Engineering
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• v.17 no.1
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• pp.16-21
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• 2006

In this study, PEO blend fibers mixed with polyaniline (PANI)/10-camphor sulfonic acid (CSA) and PANI/dodecylbenzene sulfonic acid (DBSA) were electro spun to investigate the influence of PANI content. CSA and DBSA were used as a functionalized doping acid having a bulky volume. PANI/PEO blend solution was prepared by dissolving PEO and PANI doped with CSA or DBSA. The thermal properties were measured by thermogravimetric analyzer (TGA). As a result, with increasing of the PANI content in PANI/CSA and PANI/DBSA, although initial decomposition temperature (IDT) was decreased, thermal stability was increased due to the increase of $A^*{\cdot}K^*$ and integral procedural decomposition temperature (IPDT). The electrical conductivities measured by the 4-probe method. The electric conductivity was increased with increasing of PANI content in PANI/CSA and PANI/DBSA. However, electrical conductivity did not change significantly beyond 30% content of PANI. From CV results, PANI/CSA showed the better defined peak shpae and higher peak current density compared to PANI/DBSA. This was probably related to the slightly higher electrical conductivity or better morphology for easy charge transfer in the case of PANI/CSA.

• Clean Technology
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• v.20 no.4
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• pp.433-438
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• 2014

There is an increasing interest in the development of rechargeable batteries suitable for use in both hybrid electric vehicles and energy storage systems that require higher charge & discharge rates, bigger battery sizes and increased safety of the batteries. Spinel-type lithium titanium oxide ($Li_4Ti_5O_{12}$) as a potential anode for lithium ion batteries has many advantages. It is a zero-strain materials and it experiences no structural change during the charge/discharge precess. Thus, it has long cycle life due to its structural integrity. It also offers a stable operation voltage of approximately 1.55 V versus $Li^+/Li$, above the reduction potential of most organic electrolyte. In this study, Ru added $Li_4Ti_5O_{12}$ composites were synthesized by solid state process. The characteristics of active material were investigated with TGA-DTA, XRD, SEM and charge/discharge test. The capacity was reduced when Ru was added, however, the polarization decreased. The capacity rate of $Li_4Ti_5O_{12}$ with Ru (3%, 4%) addition was reduced during the charge/discharge precess with 10 C-rate as a high current density.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.341-347
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• 2023

In PEMFC, PtCo/C alloy catalysts are widely used because of good performance and durability. However, few studies have been reported on the durability of carbon supports of PtCo/C evaluated at high voltages (1.0~1.5 V). In this study, the durability of PtCo/C catalysts and Pt/C catalysts were compared after applying the accelerated degradation protocol of catalyst support. After repeating the 1.0↔1.5V voltage change cycles, the mass activity, electrochemical surface area (ECSA), electric double layer capacitance (DLC), Pt dissolution and the particle growth were analyzed. After 2,000 cycles of voltage change, the current density per catalyst mass at 0.9V decreased by more than 1.5 times compared to the Pt/C catalyst. This result was because the degradation rate of the carbon support of the PtCo/C catalyst was higher than that of the Pt/C catalyst. The Pt/C catalyst showed more than 1.5 times higher ECSA reduction than the PtCo/C catalyst, but the corrosion of the carbon support of the Pt/C catalyst was small, resulting in a small decrease in I-V performance. In order to improve the high voltage durability of the PtCo/C catalyst, it was shown that improving the durability of the carbon support is essential.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.