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http://dx.doi.org/10.4191/KCERS.2005.42.2.104

Microstructure and Electrical Properties of the Pt/Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS) Using the PbO Buffer Layer  

Park, Chul-Ho (School of Materials Science and Engineering, Pusan National University)
Song, Kyoung-Hwan (School of Materials Science and Engineering, Pusan National University)
Son, Young-Guk (School of Materials Science and Engineering, Pusan National University)
Publication Information
Journal of the Korean Ceramic Society / v.42, no.2, 2005 , pp. 104-109 More about this Journal
Abstract
To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.
Keywords
PbO buffer layer; MFIS structure; Ferroelectric properties; Ferroelectric random access memory;
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  • Reference
1 J. F. Scott and C. A. P. Araujo, 'Ferroelectric Memories,' Science, 246 1400-05 (1989)   DOI   ScienceOn
2 H. D. Chen, K. R. Udayakumar, C. J. Gaskey, and L. E. Cross, 'Electrical Properties' Maxima in Thin Films of the Lead Zirconate-Lead Titanate Solid Solution System,' Appl. Phys. Lett., 67 3411-13 (1995)   DOI
3 T. Hirai, K. Teramoto, T. Goto, and Y. Tarui, 'Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a $CeO_2$ Buffer Layer,' Jpn. J. Appl. Phys., 33 Part 1[9b] 5219-22 (1994)   DOI
4 E. Tokumitsu, K. Itani, B. K. Moon, and H. Ishiwara, 'Crystalline Quality and Electrical Properties of Pb$Zr_xTi_l-xO_3$ Thin Films Prepared on $SrTiO_3$-Covered Si Substrates,' Jpn. J. Appl. Phys., 34 5202-06 (1995)   DOI
5 J. L. Moll and Y. Tarui, 'A New Solid State Resistor,' IEEE Trans. Electron Devices, ED-10 338-43 (1963)
6 D. R. Lampe, D. A. Adams, M. Austin, M. Polinsky, J. Dzimianski, S. Sinharoy, H. Buhay, P. Brabant, and Y. M. Liu, 'Process Integration of the Ferroelectric Memory FETs for NDRO FERAM,' Ferroelectrics, 133 61-72 (1992)   DOI
7 N. A. Basit and H. K. Kim, 'Growth of Highly Oriented Pb(Zr,Ti)$O_3$ Films on MgO-Buffered Oxidized Si Substrates and Its Application to Ferroelectric Nonvolatile Memory Field-Effect Transistors,' Appl. Phys. Lett., 73 3941-43 (1998)   DOI   ScienceOn
8 W. Wang, Z. Chen, M. Adachi, and A. Kawabata, 'Preparation of Zr-Rich PZT and La-Doped $PbTiO_3$ Thin Films by R. F. Magnetron Sputtering and Properties for Pyroelectric Applicational Vapor Deposition (MOCVD),' Integrat. Ferroelectr., 12 251-56 (1996)   DOI
9 T. Hirai, K. Teramoto, K. Nagashima, H. Koike, and Y. Tarui, 'Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO Buffer Layer,' Jpn. J. Appl. Phys., 34 4163-66 (1995)   DOI
10 Y. G. Son, 'Electrical Properties of $Ba_{0.5}_Sr_{0.5}TiO_3$ Thin Film with Various Heat Treatment Conditions,' J. Kor. Ceram. Soc., 38 [5] 492-98 (2001)
11 T. Kim, J. M. Koo, H. S. Min, I. S. Lee, and J. Y. Kim, 'Effects of PZT-Electrode Interface Layers on Capacitor Properties,' Kor. J. Mater. Res., 10 [10] 684-90 (2000)