Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

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Preparation of a Bi$_{4}$Ti$_{3}$O$_{12}$ Thin Film and Its Electrical Properties

Bi$_{4}$Ti$_{3}$O$_{12}$ 박막의 제작과 그 특성에 관한 연구

  • 강성준 (여수대학교 반도체·응용물리학과) ;
  • 장동훈 (인하대하교 전자재료공학과) ;
  • 민경진 (인하대하교 전자재료공학과) ;
  • 김성진 (여수대학교 전기 및 반도체공학과) ;
  • 정양희 (여수대학교 전기 및 반도체공학) ;
  • 윤영섭 (인하대하교 전자재료공학과)
  • Published : 2000.04.01
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Abstract

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

Bi/sub 4/Ti/sub 3/O/sub 12/ (BIT) 박막을 acetate 계 precursor 를 이용한 sol-gel 법으로 제작한 후, 구조적 및 전기적 특성을 조사하여 NVFRAM (Won-Volatile Ferroelectric RAM)으로의 응용가능성을 조사하였다. DT-TG (Differential Thermal-Thermal Gravimetric) 분석으로 drying 온도와 annealing 온도가 각각 400℃ 와 650℃ 인 BIT 박막의 열처리조건을 확립하였다. Pt/Ta/Sio/sub 2//Si 기판 위에 제작된 BIT 박막은 완전한 orthorhombic perovskite상을 가지며, 입자크기가 약 100nm 이고 표면 거칠기는 약 70.2Å 으로 비교적 치밀한 형상을 나타내었다. 10㎑ 의 주파수에서 비유전률과 유전손실은 각각 176 과 0.038 이었으며, 100 ㎸/cm 의 전기장에서 누설전류밀도는 4.71㎂/㎠ 이었다. ±250㎸/㎝ 에서 이력곡선을 측정한 결과, 잔류분극 (Pr)과 항전계 (Ec)는 각각 5.92μC/㎠ 과 86.3㎸/㎝ 이었다. BIT 박막에 ±5V 의 사각펄스를 인가하여 피로특성을 측정한 결과, 잔류분극은 초기값 5.92μC/㎠ 에서 10/sup 9/회에서는 3.95μC/㎠ 로 약 33% 감소하였다.

Keywords

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