• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.470-470
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• 2010

Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

• Progress in Superconductivity
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• v.5 no.2
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• pp.128-131
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• 2004

The resistive superconducting fault current limiters (SFCLs) are very attractive devices for the electric power network. But they have some serious problems when the YBCO thin films were used for the current limiting materials due to the in homogeneities caused by manufacturing process. When the YBCO films have some inhomogeneities, simultaneous quenches are difficult to achieve when the fault current limiting units are connected in series for increasing operating voltage ratings. Magnetic field application is one of the prospective way of inducing simultaneous quenches far the series-connected resistive FCL components. Magnetic field was typically generated by the fault current thorough a coil, which is connected to components of the fault current limiter in series, leaving the problem, which provides significant inductance to the power line and suppresses critical current density of the superconducting components. In this article we investigated the possible application of the protective current transformer (p-CT), which is available current source to the magnetic coil. This system inductively coupled to the circuit, therefore, remarkably reducing impedance to the circuit. The current by the protective current transformer was directly fed to the coil, generating magnetic field large enough to reduce critical current density of the components. This successfully induced simultaneous quenches of the series-connected resistive FCL components.

• Journal of Information Display
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• v.10 no.4
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.89-91
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• 1995

This paper deals with calculation of surface charge density on current carrying conductors by FEM. The proposed algorithm is formulated by equation of continutity in conductor region and maxwell's equations outside, respectively, Surface charge density is calculated by electric scalar potential and boundary condition for electrostatic fields.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.814-819
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• 2010

Porous carbon electrodes with wooden materials are manufactured by molding carbonized wood powder. Electrical properties of the interface for electrolyte and porous carbon electrode are investigated from viewpoint of NaCl electrolyte concentration, capacitance and complex impedance. Density of porous carbon materials is 0.47~0.61 g/$cm^3$. NaCl electrolytic absorptance of the porous carbon materials is 5~30%. As the electrolyte concentration increased, capacitance is increased and electric resistance is decrease with electric double layer effect of the interface. The electric current of the porous carbon electrode compared in the copper and the high density carbon electrode was improved on a large scale, due to a increase in surface area. The circuit current increased as the distance between of the porous carbon electrode and the zinc electrode decreased, due to increase in electric field. Experimental results indicated that the current properties of galvanic cell could be improved by using porous carbon electrode.

• Progress in Superconductivity
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• v.3 no.2
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• pp.252-256
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• 2002

We studied YBCO films for current limiting of the resistive type which utilizes a transition from superconducting to normal state caused by exceeding critical current. The films were deposited on sapphire substrates and covered by gold top layer. The current limiting element consists of 2 mm wide YBCO stripes connected in series. A serious problem in using YBCO films for current limiting is inhomogeneities caused by imperfect manufacturing. Therefore simultaneous quench is a difficult problem when elements for current limiting are connected in series. So some researchers have recently proposed using magnetic field and heating for simultaneous quench. We have measured extended exec trim field-current density(E-J) characteristics for current limiting elements of YBCO films in applied magnetic field of 0 - 130 mT. And we have investigated quench characteristics in current limiting elements and between elements of YBCO films in applied magnetic field. The result of the experiments show that the presence of applied magnetic fields induces uniform quench distribution fur the stripes in element at $50V_{rms}$, otherwise non-uniform quenches were observed. And simultaneous quenches between elements were investigated at $150V_{rms}$. We suggest that suppressing the critical current by increased fields due to fault current effectively forced the stripes of higher $J_{c}$(0) to quench, resulting in equalizing quench times.s.s.s.

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.68-68
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1602-1605
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• 2008

We considered most general electron emission caused by temperature as well as electric field with a free electron gas model. The total electron emission current density comes from field emission effect where electron energy is lower than vacuum and from thermionic emission effect where electron energy is higher than vacuum. The total electron emission current density is shown as a function of temperature for constant electric field, and as a function of electric field for constant temperature.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2204-2206
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• 2000

In this paper, the magnetic fields measured experimentally from the electric home appliances were evaluated and the data were discussed on the bases of the international institutes recommendations. It is difficult to insulate magnetic flux completely from electric home appliances and impossible to simulate theoretically because of the different directions and magnitudes of magnetic fields according to the internal current of electric home appliances. The experimental measurements of magnetic flux density were carried out according to the increment of distance in the vicinity of electric home appliances. The magnetic flux density produced by the electric home appliances was drastically dropped with the increment of distance. The measured and analysed results of electric home appliances of 15 including computer monitor, TV, etc. were presented.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.