Current Density Equations Representing the Transition between the Injection- and Bulk-limited Currents for Organic Semiconductors

  • Lee, Sang-Gun (Department of Information Science and Electrical Engineering, Kyushu University) ;
  • Hattori, Reiji (Art, Science, and Technology Center for Cooperative Research, Kyushu University)
  • Published : 2009.12.31

Abstract

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

Keywords

References

  1. J. Godlewski, and J. Kalinowski, J. J. Appl. Phys. 1, 24 (1989)
  2. S. M. Sze, Physics of Semiconductor Device (Wiley-Interscience, New York, 1981), Ch. 5
  3. P. Mark, and W. Helfrich, J. Appl. Phys. 33, 205 (1962) https://doi.org/10.1063/1.1728487
  4. A. J. Campbell, M. S. Weaver, D. G. Lidzey, and D. D. C. Bradley, J. Appl. Phys. 84, 6737(1998) https://doi.org/10.1063/1.369001
  5. P. N. Murgatroyd and H. H. Wills, J. PHYS.D: Appl. Phys. 3, 151 (1970) https://doi.org/10.1088/0022-3727/3/2/308
  6. P. S. Davids, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 82, 6319 (1997) https://doi.org/10.1063/1.366522
  7. G. G. Mallares, and J. C. Scott, J. Appl. Phys. 85, 7426 (1999) https://doi.org/10.1063/1.369373
  8. S. G. Lee, and R. Hattori, IMID proceedings series, 431 (2008)
  9. W. D. Gill, J. Appl. Phys. 43, 5033 (1972) https://doi.org/10.1063/1.1661065
  10. J. G. Simmons, Phys. Rev. 155, 657(1967) https://doi.org/10.1103/PhysRev.155.657
  11. H. Bässler, Phys. Status Solid B, 175, 15 (1975) https://doi.org/10.1002/pssb.2221750102
  12. D. H. Dunlap, P. E. Parris, and V. M. Kenkre, Phys. Rev. Lett. 77, 542 (1996) https://doi.org/10.1103/PhysRevLett.77.542
  13. D. F. Barba, J. PHYS.D: Appl. Phys. 4, 1812 (1971) https://doi.org/10.1088/0022-3727/4/11/427