• Earthquakes and Structures
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• v.3 no.6
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• pp.869-887
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• 2012

Ground motion scaling techniques are actively debated in the earthquake engineering community. Considerations such as what amplitude, over what period range and to what target spectrum are amongst the questions of practical importance. In this paper, the effect of various ground motion scaling approaches are explored using three reinforced concrete prototypical building models of 8, 12 and 20 stories designed to respond nonlinearly under a design level earthquake event in the seismically active Southern California region. Twenty-one recorded earthquake motions are selected using a probabilistic seismic hazard analysis and subsequently scaled using four different strategies. These motions are subsequently compared to spectrally compatible motions. The nonlinear response of a planar frameidealized building is evaluated in terms of plasticity distribution, floor level acceleration and uncorrelated acceleration amplification ratio distributions; and interstory drift distributions. The most pronounced response variability observed in association with the scaling method is the extent of higher mode participation in the nonlinear demands.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.201-204
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• 2001

LDMOSFET devices operated at low temperature have applications on satellite, space shuttle and low temperature system, etc. In this study, we measured the electrical characteristics of 100v Class LDMOSFET for low temperature application. Measurement data are taken over a wide range of temperatures (100K-300K) and various drift region lengths(6.6${\mu}{\textrm}{m}$, 8.4${\mu}{\textrm}{m}$, 12.6${\mu}{\textrm}{m}$). Maximum transconductance, $g_{m}$ and drain current at low temperatures(~100K) increased over about 260%, 50% respectively, in comparison with the data at room temperature. Breakdown voltage B $V_{ds}$, and specific on- resistance decreased. Besides, ratio $R_{on}$ BV, a figure of merit of the device, decreased with decreasing temperature.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.1-8
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• 2003

In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.

• Journal of IKEEE
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• v.22 no.3
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1606-1608
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• 1996

An the SOI RESURF LDMOS with a taper oxide on the drain is proposed and verified by the device simulator, MEDICI. Simulation results on the proposed LDMOS exhibits the increase in the breakdown voltage by 12 % and reduction in the drift region length by 25 %.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.12
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• pp.1784-1795
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• 1998

Natural convection of low Prandtl number fluids with $Pr{\leq}0.2$ in a narrow horizontal annulus is numerically investigated. For $Pr{\leq}0.2$, hydrodynamic instability induces oscillatory multicellular flows consisting of multiple like-rotating cells. For a fluid with $Pr{\approx}0$, the region in which instability of conduction regime first forms is near the vertical section of annulus, and the multiple cells are distributed uniformly in the lower and upper regions of annulus. As Pr increases, however, the cells are shifted upwards. The like-rotating cells drift downward, as time goes on, and the speed of travel increases with increase of Pr. For a fluid with Pr=0.1, a flow with period-4 solution is observed between chaotic states.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.938-940
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• 1999

We have fabricated SiC Schottky diode for high temperature applications. SiC thin film for drift region has been deposited by ICP-CVD. In order to establish metallization conditions, we have extracted the device parameters of the Schottky diode from the forward I-V characteristics and the C-V characteristics as a function of temperature. The ideality factor was varied from 2.07 to 1.15 and the barrier height was also varied from 1.26eV to 1.92eV with increase of temperature. The reverse blocking voltage was 183 V.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.76-79
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• 2001

Energy distribution function in $SiH_4$ has been analysed over the E/N range $0.5{\sim}300Td$ and Pressure value 0.5, 1.0, 2.5 Torr by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50Td for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1830-1833
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• 1997

This paper describes the electron transport characteristic in $SiH_4$ gas calculated for range of E/N values from $0.5{\sim}300$(Td) using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, longitudinal and transverse diffusion coefficients with the experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at E/N : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.44.1-44.1
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• 2009

Identification of wave characteristics during current disruption events in the near-Earth geomagnetic tail region (~ 10 RE) is important to understand the substorm onset mechanism. In this paper, linear stability analysis in the ion-cyclotron grequency range, considering temperature anisotropy and cross-field flow is presented. It is found that the ion-cyclotron drift waves propagating in a quasi-perpendicular direction with respect to the ambient magnetic field are characterized by low frequencies ($\omega$ < $0.5{\Omega}ci$), while quasi-parallel waves have frequencies close to the ion-cyclotron frequency ($\omega{\sim}{\Omega}ci$). This finding is consistent with the observation by THEMIS spacecraft of a current disruption event in which a similar high- and low-frequency band structure is also present [A. T. Y. Lui, et al., J. Geophys. Res. 113, A00C06 (2008)]. It is also found that the quasi-perpendicular mode is excited by the ion cross-field flow.