• 한국태양에너지학회 논문집
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• 제33권5호
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• pp.82-88
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• 2013

There are the stirring test and drain test in the daily performance test to determine the thermal performance of a domestic solar hot water system. The drain test is a test that measures the discharge heating rate while drain the hot water from the top of the storage tank and supply the city water to the bottom of the tank. From the perspective of the user, this drain test is more effective than the stirring test. In this study, the thermal performance were compared through the drain test for a passive type and an active type domestic solar hot water systems consisting of the same storage tank and collectors. At this point, a passive type was used the horizontal storage tanks, and an active type was used vertical storage tank. In the drain test, when the hot water drained up to the reference hot water temperature, an active type which have vertical storage tank represents excellent daily performance than a passive type which have horizontal storage tank regardless of weather conditions. The reason for this is because the vertical storage tank is advantageous to thermal stratification in the tank. After the drain test, the residual heat for the horizontal storage tank was much more than the vertical storage tank, but in the next day the amount of discharged heat were less than the those of vertical storage tank neither. Thus, the solar water heating system which have horizontal storage tank should be adopted preheating control method rather than separate using control method when connected with auxiliary heat source device.

• 한국재난정보학회 논문집
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• 제13권4호
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• pp.483-490
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• 2017

최근 경제성장과 함께 산업용, 주거용 토지의 요구가 증대되고 있으나 좋은 지반조건으로 개발된 토지를 얻기가 어려워지고 있다. 샌드드레인, 모래다짐말뚝, 팩드레인, 프라스틱보드드레인(PBD)등 다양한 연직배수기술이 연약지반의 경제적 개발을 가능하게 하고 있다. 연직배수에서는 통수능력이 중요한 요소이다. 그러나, 현장조건에서는 토질조건, 상재하중 등 다양한 조건에 의하여 통수능력이 변화된다. 본 논문에서는 이중코어형 PBD, 대심도형 PBD, X형 PBD, 일반형 PBD등 4가지 다른 형태의 PBD에 대하여 통수능 시험이 수행되었다. 상재하중과 동수경사에 따른 통수능 특성을 분석하였다. 본 연구에서는 이중코어형의 통수능력이 가장 우수하였다.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 전기전자학회논문지
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• 제26권3호
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• pp.333-340
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• 2022

고전압용 정전기 보호소자인 DDDNMOS(double diffused drain N-type MOSFET) 소자의 더블 스냅백 방지를 위한 최적의 이온주입 조건을 결정하기 위해 공정 및 소자 시뮬레이션이 수행되었다. HP-Well, N^- 드리프트 및 N⁺ 드레인 이온주입량의 변화가 더블 스냅백 및 애발란치 브레이크다운 전압에 미치는 영향을 고찰함으로써 더블 스냅백을 방지하여 정전기 보호 성능 개선할 수 있었다. HP-Well 영역보다는 N^- 드리프트 영역의 이온주입 농도를 최적으로 설계할 경우, 1차 on 상태에서 2차 on 상태로 전이하는 것을 막아주므로 비교적 양호한 정전기 보호 성능을 얻을 수 있었다. 또한 드리프트 이온주입 농도는 누설전류 및 애발란치 브레이크다운 전압에도 영향을 미치므로 동작전압이 30V보다 큰 공정기술에서는 DPS와 같은 새로운 구조를 적용하거나, 대안으로 여러 공정 변수들을 종합(colligation)하여 적용할 경우 향상된 정전기 보호 성능을 실현할 수 있을 것이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.46-52
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• 2012

Separate extraction of source ($R_S$) and drain ($R_D$) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of $R_S$ and $R_D$ in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of $R_S$ and $R_D$. We also confirmed that there is a negligible drift in the threshold voltage ($V_T$) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2000년도 봄 학술발표회 논문집
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• pp.117-124
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• 2000

This paper presents the construction planning and the detail design of a 16.2 km long railroad tunnel in a mountainous area. Major design conditions for railroad are the single track, loop-typed alinement, and a maximum grade of 24.5$\textperthousand$. A underground station(double track) with a length of 1.1km is located in the middle of the line for train cross-passing. Tunnel is excavated in highly complex geological conditions including faulted areas, abandoned mine works areas, and various rock types such as sandstone, shale, limestone, and coal seam partly. Drilling and blasting method was adopted because it is more flexible than TBM(Tunnel Boring Machine) as a result of risk assessment for geological conditions in this area. Two working adits were planned to adjust the construction schedule and can be used for ventilation and maintenance in operation phase. New material and concept were introduced to the tunnel drain design. They are expected to improve tunnel drain condition and capability. Rational tunnel support design was tried to consider the various tunnel size and purpose and to use the geological investigation results.

• 한국농공학회지
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• 제38권1호
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• pp.116-127
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• 1996

This paper dealt with FEM analysis of foundation improved with pack drain. The theory on pack drain was scrutinized and observed values in the field were compared with numerical results. Work site of Kwangyang container pier was selected as a ease study in which measurement of settlement and pore water pressure was accurately carried out. Biot's consolidation equation was selected as governing One, coupled with modified Camclay model as constitutive one. Christian and Boehmer's numerical technique was adopted. Behavior of foundation with pack drain is not simple but very complicated. Discontinuity resulted from rigidity difference between adjacent materials, smear effect and complicated boundary conditions should be considered in the behavior analysis of foundation behavior. The results of numerical analysis were influenced by smear zone. In relevant to this effect, finite element analysis was carried out using the reduced horizontal coefficient of permeability in the smear zone; The numerical results were compared with observed values in surface settlement. including pore water pressure. However only lateral di5plaoement by numerical ana1Ysis was shown since its measurement was not performed in the field. The predication of settlement to be developed later can be effectively employed for the obtimization of construction. The predication of residual settlement using the data measured in the field was made by Hoshino, Asaoka and hyperbolic method. Among them, the hyperbolic method proved best one. Settlements accorded well between numsrical and observed values while pore pressure showed a slight difference. Lateral displacement showed largest values at constant distance from ground surface. The validation of foundation analysis improved with pack drain by computer program employed in this study selecting modified Cam-clay model was satisfactorily secured.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1258-1261
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• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.363-367
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• 1988

A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.94-100
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• 2017

Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (${\Delta}L_{ch}$) and threshold voltage shift (${\Delta}V_{th}$). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.