• 산업기술연구
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• 제16권
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• pp.175-179
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• 1996

This research is the experimental and numerical study of investigating the characteristics of consolidation due to selfweight of soft marine clay. Column tests and centrifuge tests were carried out to selfweight of soft marine clay. Column tests and centrifuge tests were carried out to simulate the selfweight consolidations in field. Tests were conducted with changing drain boundary conditions and initial void ratios corresponding to four and five times of liquid limits. The RI meter was used to measure void ratio during consolidation of sample in column tests. Test results were analyzed by using the Terzaghi's infinitesimal strain theory and the finite strain theory.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2010년도 춘계학술대회 논문집
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• pp.1395-1401
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• 2010

A paradigm shift in driving system of transportation vehicle from engine to electric motor is required as the problems on air pollution and drain of petroleum resource are on the rize. Moreover while it is possible to control the motor with variable frequency driver, the application of motor in various kinds of vehicles is spread rapidly. In the paper, the effective design method of IPMSM for EV and HEV by using equivalent magnetic circuit and finite element method (FEM) is suggested. First of all, load conditions of the application are calculated. And basic design process of IPMSM is proposed with two design point. Finally, in order to verify the proposed design process, it was compared with the basic design parameter and the FEM analysis results.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2003년도 추계학술발표회
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• pp.69-72
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• 2003

The purpose of this study is the development of hybrid horizontal electrokinetic(EK) remediation system on rifle range soil under unsaturated conditions. In order to remediate soil polluted by multi-species heavy metals, in pi]of scale, a series of EK remediation tests are carried out. PVC and PDB(Plastic Drain Board) electrode systems that connected with the power supply of constant voltage and vacuum pressure of 0.5kgf/$\textrm{cm}^2$ are installed, The test results showed that the pH distribution in the sample is below 8, which is maintained until the test is finished, because of the injection of flushing solution. The final concentration, which is normalized by initial concentration, is ranged about 50 to 90%.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2000년도 봄 학술발표회 논문집
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• pp.333-338
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• 2000

At present, reinforced concrete pipe has been widely used as drain pipe. However, many reinforced concrete pipe is exposed at deteriorated environment by the growth of a sulfur-oxidizing bacterium isolated from corroded concrete. The purpose of this study is to evaluate the effects of lining by polymer-modified mortar on the development in durability of reinforced concrete pipe. Polymer-modified mortars ate prepared with various polymer typer as cement modifier and polymer-cement ratio and rested for compressive and flexural strengths, adhesion in tension, acid resistance test, freezing and thawing test, and lining test of product in the field. From the rest results, it is apparent that polymer-modified mortars have good mechanical properties and durability as lining material. In practice, all polymers can be used as lining materials for reinforced concrete pip, and type of polymer, and polymer-cement ratio and curing conditions are controlled for good lining product.

• 전자공학회논문지A
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• 제31A권9호
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• pp.72-77
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• 1994

GaAs MISFETs, with photo-CVD grown P$_{3}$N$_{5}$ gate insulator and sulfide treatment, have been fabricated and showed the instability of drain current reduced less than 22 percent for the period of 1.0s~1.0${\times}10^{4}s$. The effective electron mobility and extrinsic transconductance of the device are about 1300cm$^{2}$/V.sec and 1.33mS at room temperature. The C-V characteristics of GaAs MIS Diode and AES analysis are also discussed with respect to effect of sulfide treatment conditions.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.783-793
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• 1997

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.592-595
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• 2002

New polymeric hydrogels based on vinyl ethers have been synthesized by the ${\gamma}$-initiated polymerization method. Their physical chemistry and physical mechanical properities have been studied. It has been shown that structure and swelling behavior of the hydrogels can be regulated by the changing of synthesis conditions nature of monomers. Novel stimuli-sensitive polymers have been synthesized by the varying of macrochains hydrophilic-hydrophobic balance. The some biomedical aspects of application of hydrogels in capacity of drain aging polymeric materials in ophthalmology surgery, implants in plastic surgery as well as drug delivery systems have been investigated.

• 전자공학회논문지A
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• 제28A권9호
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• pp.736-742
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• 1991

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.221-226
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• 2008

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

• 전자공학회논문지A
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• 제31A권8호
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.