Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characteristics of Sulfide Treated GaAs MISFETs with Photo-CVD Grown $P_3$$N_5$ Gate Insulators

유화처리와 광CVD법 질화인막을 이용한 GaAs MISFET 특성

  • 최기환 (포항공과대학교 전자전기공학과) ;
  • 조규성 (포항공과대학교 전자전기공학과) ;
  • 정윤하 (포항공과대학교 전자전기공학과)
  • Published : 1994.09.01
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Abstract

GaAs MISFETs, with photo-CVD grown P$_{3}$N$_{5}$ gate insulator and sulfide treatment, have been fabricated and showed the instability of drain current reduced less than 22 percent for the period of 1.0s~1.0${\times}10^{4}s$. The effective electron mobility and extrinsic transconductance of the device are about 1300cm$^{2}$/V.sec and 1.33mS at room temperature. The C-V characteristics of GaAs MIS Diode and AES analysis are also discussed with respect to effect of sulfide treatment conditions.

Keywords