• Journal of the Korean Solar Energy Society
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• v.33 no.5
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• pp.82-88
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• 2013

There are the stirring test and drain test in the daily performance test to determine the thermal performance of a domestic solar hot water system. The drain test is a test that measures the discharge heating rate while drain the hot water from the top of the storage tank and supply the city water to the bottom of the tank. From the perspective of the user, this drain test is more effective than the stirring test. In this study, the thermal performance were compared through the drain test for a passive type and an active type domestic solar hot water systems consisting of the same storage tank and collectors. At this point, a passive type was used the horizontal storage tanks, and an active type was used vertical storage tank. In the drain test, when the hot water drained up to the reference hot water temperature, an active type which have vertical storage tank represents excellent daily performance than a passive type which have horizontal storage tank regardless of weather conditions. The reason for this is because the vertical storage tank is advantageous to thermal stratification in the tank. After the drain test, the residual heat for the horizontal storage tank was much more than the vertical storage tank, but in the next day the amount of discharged heat were less than the those of vertical storage tank neither. Thus, the solar water heating system which have horizontal storage tank should be adopted preheating control method rather than separate using control method when connected with auxiliary heat source device.

• Journal of the Society of Disaster Information
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• v.13 no.4
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• pp.483-490
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• 2017

Recently, the demand for industrial and residental land are increasing with economic growth, but it is difficult to obtain the area for development with good ground condition. Various kinds of vertical drain technologies such as sand drain, sand compaction pile, packed drain, PVD are commercially available to improve the soft ground. Discharge capacity is the important factor of vertical drains. However, under field conditions, discharge capacity is changed with various reasons, such as soil condition, overburden pressure, and so on. In this paper, the experimental study was carried out to estimate the discharge capacity of four different types of PBD, PBD for double core PBD, deep type PBD, X type PBD, general type PBD. Characteristics of the discharge capacity for the surcharge load and hydraulic gradient were analysed. The double core PBD was excellent for discharge capacity in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• Journal of IKEEE
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• v.26 no.3
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• pp.333-340
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• 2022

Process and device simulations were performed to determine the optimal ion implantation conditions to prevent double snapback of high voltage operating DDDNMOS (double diffused drain N-type MOSFET) device for ESD protection. By examining the effects of HP-Well, N^- drift and N⁺ drain ion implantation on the double snapback and avalanche breakdown voltages, it was possible to prevent double snapback and improve the electrostatic protection performance. If the ion implantation concentration of the N^- drift region rather than the HP-Well region is optimally designed, it prevents the transition from the primary on-state to the secondary on-state, so that relatively good ESD protection performance can be obtained. Since the concentration of the N^- drift region affects the leakage current and the avalanche breakdown voltage, in the case of a process technology with an operating voltage greater than 30V, a new structure such as DPS or colligation of optimal process conditions can be applied. In this case, improved ESD protection performance can be realized.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.46-52
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• 2012

Separate extraction of source ($R_S$) and drain ($R_D$) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of $R_S$ and $R_D$ in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of $R_S$ and $R_D$. We also confirmed that there is a negligible drift in the threshold voltage ($V_T$) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.

• Proceedings of the Korean Geotechical Society Conference
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• 2000.03b
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• pp.117-124
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• 2000

This paper presents the construction planning and the detail design of a 16.2 km long railroad tunnel in a mountainous area. Major design conditions for railroad are the single track, loop-typed alinement, and a maximum grade of 24.5$\textperthousand$. A underground station(double track) with a length of 1.1km is located in the middle of the line for train cross-passing. Tunnel is excavated in highly complex geological conditions including faulted areas, abandoned mine works areas, and various rock types such as sandstone, shale, limestone, and coal seam partly. Drilling and blasting method was adopted because it is more flexible than TBM(Tunnel Boring Machine) as a result of risk assessment for geological conditions in this area. Two working adits were planned to adjust the construction schedule and can be used for ventilation and maintenance in operation phase. New material and concept were introduced to the tunnel drain design. They are expected to improve tunnel drain condition and capability. Rational tunnel support design was tried to consider the various tunnel size and purpose and to use the geological investigation results.

• Magazine of the Korean Society of Agricultural Engineers
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• v.38 no.1
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• pp.116-127
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• 1996

This paper dealt with FEM analysis of foundation improved with pack drain. The theory on pack drain was scrutinized and observed values in the field were compared with numerical results. Work site of Kwangyang container pier was selected as a ease study in which measurement of settlement and pore water pressure was accurately carried out. Biot's consolidation equation was selected as governing One, coupled with modified Camclay model as constitutive one. Christian and Boehmer's numerical technique was adopted. Behavior of foundation with pack drain is not simple but very complicated. Discontinuity resulted from rigidity difference between adjacent materials, smear effect and complicated boundary conditions should be considered in the behavior analysis of foundation behavior. The results of numerical analysis were influenced by smear zone. In relevant to this effect, finite element analysis was carried out using the reduced horizontal coefficient of permeability in the smear zone; The numerical results were compared with observed values in surface settlement. including pore water pressure. However only lateral di5plaoement by numerical ana1Ysis was shown since its measurement was not performed in the field. The predication of settlement to be developed later can be effectively employed for the obtimization of construction. The predication of residual settlement using the data measured in the field was made by Hoshino, Asaoka and hyperbolic method. Among them, the hyperbolic method proved best one. Settlements accorded well between numsrical and observed values while pore pressure showed a slight difference. Lateral displacement showed largest values at constant distance from ground surface. The validation of foundation analysis improved with pack drain by computer program employed in this study selecting modified Cam-clay model was satisfactorily secured.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1258-1261
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• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.363-367
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• 1988

A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.94-100
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• 2017

Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (${\Delta}L_{ch}$) and threshold voltage shift (${\Delta}V_{th}$). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.