• Title/Summary/Keyword: double integration

Search Result 187, Processing Time 0.036 seconds

Investigation and Simulation Study on the Cascading Trip-off Fault of a Large Number of Wind Turbines in China on May 14, 2012

  • Qiao, Ying;Lu, Zong-Xiang;Lu, Ji;Ruan, Jia-Yang;Wu, Lin-lin
    • Journal of Electrical Engineering and Technology
    • /
    • v.10 no.6
    • /
    • pp.2240-2248
    • /
    • 2015
  • The integration of the large-scale wind power brings great challenge to the stability of the power grid. This paper investigates and studies the fault on May 14, 2012 of the large-scale cascading trip-off of wind turbines in North China. According to the characteristics of the voltage variation, the fault process is divided into three stages: the pre-event stage, the critical stage before cascading, and the cascading stage. The scenes in the fault are reproduced, using the full-size actual power system model. Simulation models of double-fed induction generators (DFIGs) and SVCs including protection settings and controller strategies are carefully chosen to find out the reason of voltage instability in each stage. Some voltage dynamic that have never been observed before in the faults of the same kind are analyzed in detail, and an equivalent voltage sensitive dynamic model of DFIG is proposed for the fast computation. The conclusions about the voltage dynamics are validated by the actual PMU observation evidence.

Regional Myocardial Blood Flow Estimation Model Using Rubidium-82 Dynamic Myocardial PET and Modified Double Integration Method (Rubidium-82 심근 Dynamic PET 영상과 변형이중적분법을 이용한 국소 심근 혈류 예측 모델)

  • Park, Yong-Woo;Lee, Jae-Sung;Lee, Tae-Hoon;Kwak, Cheol-Eun;Lee, Dong-Soo;Kang, Keon-Wook;Park, Jae-Hyung;Jeong, Jae-Min;Chung, June-Key;Lee, Myung-Chul;Seo, Joung-Don;Min, Byoung-Goo;Koh, Chang-Soon
    • Proceedings of the KOSOMBE Conference
    • /
    • v.1995 no.11
    • /
    • pp.157-158
    • /
    • 1995
  • PDF

Integrated Thyristor Switch Structures for Capacitor Discharge Application

  • Kim, Eun-Dong;Zhang, Chang-Li;Kim, Sang-Cheol;Baek, Do-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.05b
    • /
    • pp.22-25
    • /
    • 2001
  • A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.

  • PDF

A Structural Equation Model of General High School Students' Happiness: Mediation Effect of Self-esteem and Resilience (일반고 고등학생의 행복감 구조모형: 자아존중감과 회복탄력성의 매개효과)

  • Park, Seon Hyang;Park, Jeong Sook
    • Research in Community and Public Health Nursing
    • /
    • v.31 no.3
    • /
    • pp.395-404
    • /
    • 2020
  • Purpose: This study was conducted to develop a predictive model for happiness of students in general high schools. The study was based on the theory of happiness integration and the literature review. Methods: Data were collected using a convenience sample of 231 first and second grade students in five general high schools in D city and K Province. The exogenous variables were optimism as personality factors, parenting attitude, academic stress and friend's support as happiness. The endogenous variables were self-esteem and resilience as mediating variables, and happiness of students in general high schools. Data collection was done from March 14 to March 28, 2019. The AMOS 22.0 and SPSS programs were used to verify the validity of confirmatory factor analysis and hypothesis models. Results: The factors that have the greatest influence on happiness of high school students are self-esteem and resilience. The explanatory power of happiness by these variables was 98.1%. The individual mediating effect and double mediation effect of these variables were found to be significant. Conclusion: As student's optimistic personality, parent's positive parenting attitude, and friend's support improve student's self-esteem and resilience, ultimately positively affecting high school students' happiness, so it is necessary to consider these factors and try to develop a happiness improvement program.

A Monolithic Integration with A High Density Circular-Shape SOI Microsensor and CMOS Microcontroller IC (CMOS Microcontroller IC와 고밀도 원형모양SOI 마이크로센서의 단일집적)

  • Mike, Myung-Ok;Moon, Yang-Ho
    • Journal of IKEEE
    • /
    • v.1 no.1 s.1
    • /
    • pp.1-10
    • /
    • 1997
  • It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

  • PDF

Structural Analysis of Thin-Walled, Multi-Celled Composite Blades with Elliptic Cross-Sections (다중세포로 구성된 박벽 타원형 단면 복합재료 블레이드의 구조해석)

  • 박일주;정성남
    • Composites Research
    • /
    • v.17 no.4
    • /
    • pp.25-31
    • /
    • 2004
  • In this study, a refined beam analysis model has been developed for multi-celled composite blades with elliptic cross-sections. Reissner's semi-complimentary energy functional is introduced to describe the beam theory and also to deal with the mixed-nature of the formulation. The wail of elliptic sections is discretized into finite number of elements along the contour line and Gauss integration is applied to obtain the section properties. For each cell of the section, a total of four continuity conditions are used to impose proper constraints for the section. The theory is applied to single- and double-celled composite blades with elliptic cross-sections and is validated with detailed finite element analysis results.

Undamped Dynamic Response of Anisotropic Laminated Composite Plates and Shell Structures using a Higher-order Shear Deformation Theory (비등방성 복합적층판 및 쉘의 고차전단변형을 고려한 비감쇄 동적응답)

  • Yoon, Seok Ho;Han, Seong Cheon;Chang, Suk Yoon
    • Journal of Korean Society of Steel Construction
    • /
    • v.9 no.3 s.32
    • /
    • pp.333-340
    • /
    • 1997
  • This paper will expand the third-order shear deformation theory by the double-Fourier series and reduce to the solution of a system of ordinary differential equations in time, which are integrated numerically using Newmark's direct integration method and clarify the undamped dynamic responses for the cross-ply and antisymmetric angle-ply laminated composite plates and shells with simply supported boundary condition. Numerical results for deflections are presented showing the effect of side-to-thickness ratio, aspect ratio, material anisotropy, and lamination scheme.

  • PDF

Comparative Study on Collision Strength of LNG Carriers

  • Choe, Ick-Hung;Kim, Jae-Hyun;Ahn, Ho-Jong;Kim, Oi-Hyun
    • Journal of Ship and Ocean Technology
    • /
    • v.5 no.3
    • /
    • pp.36-44
    • /
    • 2001
  • The collision energy absorbing characteristics of side structure of the LNG carriers which have the cargo containment systems of the spherical and the membrane types are compared. A failure mechanism of the double hull side structures of 130, 000 $m^3$ class LNG carriers under sideways collision event has been simulated by using the detailed finite element calculations. In ship collision analysis, the finite element method based on explicit time integration has been use[1 with much success. Finite element modeling techniques for detail description of structural members antral ship motion regarding the dynamic behavior allowed to investigate the effect of bow shape and the initial contact position on side shell of collided ship. In the numerical simulations of the ship-to-ship sideways collision, the effect of the colliding bow shapes and the change of the colliding ship draft are investigated. The critical collision energy which is absorbed by a side structure of a collided ship until the fore-end of colliding ship arrives at the boundary of the cargo tank is calculated. The critical speed of specified colliding ships which can not penetrate the boundary of the LNG cargo tank of the collided ship under collision accident if evaluated.

  • PDF

On the Distribution of Phase Error in the Rician Fading Channel (라이시안 감쇄 채널에서의 위상오류 분포)

  • 김민종;한영열
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.13 no.8
    • /
    • pp.797-803
    • /
    • 2002
  • In this paper we derive the probability density function of the phase error of the received signal over Rician fading channel and verify its propriety as the probability density function using the zeroth moment. In general, for the error probability over fading channel we compute the error probability in the first place when it is only AWGN, and then we get the final result by averaging the first result and the probability density function of the corresponding fading channel. In this paper, however, we compute the error probability by double integration after the probability density function over fading channel is computed.

Measurement of the Slider-Disk Contact during Load/Unload process with AE and Electrical Resistance (Load/Unload 시 AE 와 전기저항을 이용한 슬라이더-디스크 충돌측정에 관한 연구)

  • Kim, Seok-Hwan;Lee, Yong-Hyun;Lim, Soo-Cheol;Park, Kyoung-Su;Park, No-Cheol;Park, Young-Pil
    • Transactions of the Society of Information Storage Systems
    • /
    • v.3 no.4
    • /
    • pp.160-166
    • /
    • 2007
  • In this paper, the measured electrical resistance method is proposed to analyze the ramp-tab contact during the load/unload (L/UL) process. Since this method supplies the voltage change due to the resistance change, we can easily and conveniently identify the ramp-tab contact from the acoustic emission (AE) signal. At first, we carefully deposit the conductive material on the surface of the conventional ramp by sputtering method. The ratio frequency (RF) magnetron co-sputtering system is applied to accomplish the deposited double-layers on the ramp surface. One layer is the stainless steel for the conductive layer and the other is the titanium layer for the cohesive function between the ramp surface and the stainless steel layer. In order to guarantee the stiffness and damping properties of the original ramp, the deposited conductive layer is intended to have very thin thickness. After integration the proposed ramp device into the L/UL system and networking the electrical resistance circuit, the L/UL performance is experimentally evaluated by comparing the measured electrical resistance signal and AE signal.

  • PDF