• 한국인터넷방송통신학회논문지
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• 제17권2호
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• pp.83-88
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• 2017

본 논문에서는 2중 유전체층 사이의 완전도체띠 격자구조에 의한 TE(transverse electric) 산란 문제는 전자파 수치해석 방법으로 알려진 PMM(point matching method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 산란 전자계는 Floquet 모드 함수의 급수로 전개하였고, 도체띠의 해석을 위해 완전도체 경계조건을 적용하였다. 완전도체띠의 폭과 주기, 2중 유전층 사이의 비유전율과 두께 및 입사각에 대해 정규화된 반사전력과 투과전력을 계산하였다. 최소값을 가지는 변곡점들의 대부분의 반사전력은 입사각 이외의 다른 방향으로 산란된다. 본 논문의 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 문화기술의 융합
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• 제9권3호
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• pp.641-646
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• 2023

본 논문에서는 2중 유전체층 사이의 저항띠 격자구조에 의한 TM(transverse magnetic) 산란 문제를 전자파 수치해석 방법으로 알려진 FGMM(fourier galerkin moment method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 산란 전자계는 Floquet 모드 함수의 급수로 전개하였고, 저항띠의 해석을 위해 저항 경계조건을 적용하였다. 전반적으로, 저항띠의 균일저항율이 증가하면 저항띠에 유도되는 전류밀도의 크기는 감소하였고 반사 전력은 감소하였으며, 상대적으로 투과전력은 증가하였다. 또한 유전체 층의 두께가 증가할수록 반사전력은 증가하였고 상대적으로 투과전력은 상대적으로 감소하였다. 본 논문에서 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 방법인 PMM의 결과들과 비교하여 매우 잘 일치하였다.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.869-872
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• 2009

Double-doped magnetic particles that incorporated magnetites into both the surface and inside the silica cores were fabricated via the sol-gel reaction of citrate-stabilized magnetites with silicon alkoxide. Double-doped magnetic particles were easily fabricated and exhibited an higher magnetism in comparison to the singledoped magnetic particles that were prepared by the erosion of surface-deposited magneties from double-doped magentic particles. Thin gold layer was formed over magnetic silica nanospheres via nanoseed-mediated growth of gold clusters. The plasmon-derived absorption bands of double-doped magnetic silica-gold nanoshells were more broadened and shifted down by ca. 20 nm as compared to those of single-doped magnetic silicagold nanoshells, which were attributed to not only the surface scattering of incident light due to relatively rough surafce morphology, but also heterogeneous permittivity of dielectric cores due to surface-deposited magnetites.

• ETRI Journal
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• 제39권3호
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• pp.390-397
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• 2017

In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

• 한국세라믹학회지
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• 제39권3호
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• pp.222-225
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• 2002

Microwave dielectric properties of the layered and functionally graded materials (FGMs) of $Mg_{0.93}Ca_{0.07}TiO_3$ (MCT) and $(Ca_{0.3}Li_{0.14}Sm_{0.42})TiO_3$(CLST) were investigated as a function of the volume ratio of two components. Dielectric constant was decreased with an increase of the volume ratio of MCT which had a lower dielectric constant thant CLST. For the layered FGMs specimens, the difference of thermal expansion coefficients between two components induced thermal strain to dielectric layers, which was confirmed by the plot of ${\Delta}$k (X-ray diffraction peak width0 versus k (scattering vector) using the double-peak Lorentzian function, f(x). Quality factor of the specimens was affected by the thermal strain of dielectric layer, especially MCT layer. For the specimen with the volume ratio of MCT/CLST = 2, the qulaity factor of the specimen showed a minimum value due to the maximum thermal strain fo MCT layer.

• 한국전자파학회논문지
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• 제18권6호
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• pp.656-663
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• 2007

본 논문은 접지된 2중의 유전체 평면 사이에 변화하는 저항율을 갖는 저항 띠 격자 구조로 임의의 각도로 입사되는 E-분극 전자파 산란 문제를 모멘트 법으로 해석하였다. E-분극 산란에서는 저항 띠의 모서리 양끝에서 유도되는 전류 밀도가 매우 높을 것으로 예측되므로, 이 특성과 일치하는 기저 함수를 직교 다항식 일종인 2종 Chebyshev 다항식의 급수로 전개하여 수치 해석하였다. 산란 전자계는 주기적인 구조에 대응시킬 수 있는 Floquet 모드 함수의 급수로 전개하였고, 미지의 계수를 구하기 위하여 경계 조건을 적용하였다 또한, Fourier-Galerkin 모멘트 법을 적용함으로써 접지된 2중의 유전체 사이에 다양한 저항율을 갖는 저항 띠에 대해 기하광학적인 정규화 된 반사 전력에 관한 스트립 폭과 주기, 입사각의 영향 등을 수치 해석하였다.

• 한국수소및신에너지학회논문집
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• 제29권6호
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• pp.627-634
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• 2018

Gallium-based liquid metal, e.g., eutectic gallium-indium (EGaIn), is highly attractive as an electrode material for flexible and stretchable devices. On the liquid metal, oxide layer is spontaneously formed, which has a wide band-gap, and therefore is electrically insulating. In this paper, we fabricate a capacitor based on eutectic gallium-indium (EGaIn) liquid metal and investigate its cyclic voltammetry (CV) behavior. The EGaIn capacitor is composed of two EGaIn electrodes and electrolyte. CV curves reveal that the EGaIn capacitor shows the behavior of electric double-layer capacitors (EDLC), where the oxide layers on the EGaIn electrodes serves as the dielectric layer of EDLC. The oxide thicker than the spontaneously-formed native oxide decreases the capacitance of the EGaIn capacitor, due to increased voltage loss across the oxide layer. The EGaIn capacitor without oxide layer exhibits unstable CV curves during the repeated cycles, where self-repair characteristic of the oxide was observed. Finally, the electrolyte concentration is optimized by comparing the CV curves at various electrolyte concentrations.

• 한국표면공학회지
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• 제54권1호
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• pp.30-36
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• 2021

In this study, double-layered anodizing films were formed on Al 5052 and Al 6061 alloys consecutively first in sulfuric acid and then in oxalic acid, and hardness, withstand voltage, surface roughness and acid resistance of the anodizing films were compared with single-layered anodizing films in sulfuric acid and oxalic acid electrolytes. Hardness of the double-layered anodizing film decreased with increasing ratio of inner layer to outer layer for both Al 5052 and Al 6061 alloys, suggesting that outer anodizing film formed in sulfuric acid electrolyte is damaged during the second anodizing in oxalic acid electrolyte. Withstand voltage of the double-layered anodizing films increased with increasing the thickness ratio of inner layer to outer layer. Surface roughness of the double-layered anodizing films were comparable with that of single-layered anodizing film formed in sulfuric acid but higher than that of single layer anodizing film formed in oxalic acid electrolyte. In acid resistance test, all of the double-layered and single-layered anodizing films showed good acid resistance more than 3 h without any visible gas evolution, which is attributable to sealing of pores. Based on the experimental results obtained in this work, it is possible to design a double-layered anodizing film with cost-effectiveness and improved physical and electrical properties by combining two consecutive anodizing processes of sulfuric acid anodizing and oxalic acid anodizing methods.

• 전자공학회논문지A
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• 제31A권8호
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• pp.53-61
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• 1994

Intermetallic dielectric layer was formed by using SiO$_2$/SOG/SiO$_2$ for aluminum based dual-metal interconnection process and its electric characteristics were evaluated. The dielectric layer was in the cost and facility point of view more useful than the insulator that was formed by etch-back process. The planarity by using SOG process was about 40% higher than that of the insulator by the CVD process. When SiO$_2$ films were deposited by the PECVD process the Al hillock formation during the next process was restrained bucause the intermetalic insulator was made at low temperature. The leakage current was 1${\times}10^{7}~1{\times}10^{-8}A/cm^{2}$ at the electric field of 10$^{5}$V/cm and breakdown filed was 4.5${\times}10^{6}~7{\times}10^{6}A/cm$. So we had confirmed that siloxane SOG was very useful for intermetallic layer material.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.403-407
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• 2018

In this study, double layer KTN/STO thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.