• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.16-20
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• 2004

We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

• Current Optics and Photonics
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• v.4 no.6
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• pp.461-465
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• 2020

A dual-mode laser terahertz source consisting of two in-line distributed Bragg reflector (DBR) laser diodes (LD) is proposed. It is less susceptible to residual reflections from facets than an in-line dual-mode distributed feedback (DFB) LD. The characteristics of the proposed terahertz source are theoretically investigated using a split-step time-domain simulation. It is shown that terahertz waves of frequencies from 385 GHz to 1725 GHz can be generated by appropriate thermal tuning of two DBR LDs. The dual-mode DBR LD terahertz source exhibits good spectral quality for residual facet reflectivity below 0.02, but facet reflectivity of the in-line dual-mode DFB LD terahertz source should be below 0.002 to provide similar spectral quality.

• ETRI Journal
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• v.45 no.1
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• pp.163-170
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• 2023

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.666-672
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• 2003

In this paper, we described the fabrication and the performance of wavelength tunable distributed bragg reflector (DBR) laser diode (LD), having different waveguide coupling mechanisms; integrated-twin-guide (ITG) DBR-LD and butt coupled (BT) DBR-LD. This deviceis fabricated by metal organic vapor phase epitaxy (MOVPE) growth and planar buried heterostructure (PBH)-type transverse current confinement structure. The result of measurement, the optical performance of BT-DBR-LD is better over 2 times than that of ITG-DBR-LD at the variation of threshold current and output power, and slop efficiency due to the higher coupling efficiency of the butt coupled structure than the integrated twin guide structure. The maximum wavelength tuning range is about 7.2nm for ITG DBR-LD and 7.4nm for BT DBR-LD. Both types of lasers have a very high yield of single mode operation with a side-mode suppression ratio of more than 35dB.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.327-330
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• 2003

We present the fabrication and measured performance of a wavelength tunable Butt coupled DBR-LD. An average coupling efficiency between active layer and passive waveguide layer was measured over 85％per facet, and the average threshold current was 21 ㎃ for the waveguide integrated DBR laser. High output power of Butt coupled DBR-LD was obtained over 25 ㎽. As high as 25 ㎽ of output power was achieved by the butt coupled method. The maximum wavelength tuning range is about 7.4 nm, and the side mode suppression ratio was more than 40 ㏈ using 1.3 ${\mu}{\textrm}{m}$ InGaAsP waveguide layer.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.544-547
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• 2006

A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.