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The Operating Characteristics of DBR-LD with Wavegudies Coupling Structure  

오수환 (한국전자통신연구원 반도체 원천기술연구소 광통신소자부)
박문호 (한국전자통신연구원 반도체 원천기술연구소 광통신소자부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.9, 2003 , pp. 666-672 More about this Journal
Abstract
In this paper, we described the fabrication and the performance of wavelength tunable distributed bragg reflector (DBR) laser diode (LD), having different waveguide coupling mechanisms; integrated-twin-guide (ITG) DBR-LD and butt coupled (BT) DBR-LD. This deviceis fabricated by metal organic vapor phase epitaxy (MOVPE) growth and planar buried heterostructure (PBH)-type transverse current confinement structure. The result of measurement, the optical performance of BT-DBR-LD is better over 2 times than that of ITG-DBR-LD at the variation of threshold current and output power, and slop efficiency due to the higher coupling efficiency of the butt coupled structure than the integrated twin guide structure. The maximum wavelength tuning range is about 7.2nm for ITG DBR-LD and 7.4nm for BT DBR-LD. Both types of lasers have a very high yield of single mode operation with a side-mode suppression ratio of more than 35dB.
Keywords
distributed bragg reflector (DBR) laser diode (LD); integrated twin guide DBR-LD; butt coupled DBR-LD; semiconductor laser; tunable laser;
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