• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.276-279
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• 2005

Influences of sustain pulse-width on electrical characteristics and luminous efficiency are experimentally investigated for surface discharge of AC-PDP. A square pulse with variable duty ratio and fixed rising time of 300 ns has been used in the experiment. It is found that the memory coefficient is significantly increased at the critical pulse-width. And the wall charges and wall voltages as well as capacitances are experimentally measured by Q- V analysis method along with the voltage margin relation, in terms of the sustain pulse-width in the range of $1{\mu}s$ to $5{\mu}s$ under driving frequency of 10 kHz to 180 kHz. And the luminous efficiency is also experimentally investigated in above range of sustain pulse-width with driving frequency of 10 kHz to 180 kHz. It is noted that the luminous efficiency for 10 kHz and 180 kHz are 1.29 1m/W and 0.68 1m/W respectively, since the power consumption for 10 kHz is much less than that for 180 kHz. It has been concluded that the optimal sustain pulse-width is in the range of $2.5 {\~}4.5{\mu}s$ under driving frequency range of 10 kHz and 60 kHz, and in the range of $1.5 {\~} 2.5{\mu}s$ under driving frequency range of 120 kHz and 180 kHz based on observation of memory coefficient, and wall voltage as well as luminous efficiency.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Design & Manufacturing
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• v.14 no.3
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• pp.63-70
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• 2020

As the consumer market in the VR(virtual reality) and the head-up display industry grows, the demand for 5-axis machines and grooving machines using on a ultra-precision machining increasing. In this paper, ultra-precision diamond tools satisfying the cutting edge width of 500 nm were developed through the process research of a focused ion beam. The material used in the experiment was a single-crystal diamond tool (SCD), and the equipment for machining the SCD used a focused ion beam. In order to reduce the influence of the Gaussian beam emitted from the focused ion beam, the lift-off process technology used in the semiconductor process was used. 2.9 ㎛ of Pt was coated on the surface of the diamond tool. The sub-micron tool with a cutting edge of 492.19 nm was manufactured through focused ion beam machining technology. Toshiba ULG-100C(H3) equipment was used to process fine-pattern using the manufactured ultra-precision diamond tool. The ultra-precision machining experiment was conducted according to the machining direction, and fine burrs were generated in the pattern in the forward direction. However, no burr occurred during reverse machining. The width of the processed pattern was 480 nm and the price of the pitch was confirmed to be 1 ㎛ As a result of machining.

• Journal of the Korean Graphic Arts Communication Society
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• v.28 no.2
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• pp.69-85
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• 2010

Currently, environmental contaminants that can cause Aromatic types of hydrocarbons, less than 1% made of Aromatic Free kind of used products, soybean oil products with linseed oil with the products, rice products using a wide range of environmentally ecological ink since 2000 is released quickly. All materials used in printed material, if the green is the best way to print the composite materials in industrial applications, because each process on the print quality and productivity, there can be many differences in this experiment because it accounts for a large proportion in the print general ink in the ink section and the International color standards(ISO2846-1:2006) certified ecological ink were compared. Therefore, in this paper has the ink released from the same company, each common general ink and ecological ink in the same condition which results were focused on whether the emerging international color standard(ISO 2846-1:2006) recognized for environmentally ecological ink printed color reproduction of the actual offset(color reproduction) how conformity to ISO 12647-2 standard color on the basis of the offset would check Color Reproduction. Based on the results of the experiments of this study, given the ecological ink coated paper, uncoated paper both color difference and the gamut of the ISO 12647-2 standard is suitable for ecological ink, the ink's color gamut reproduction, even more than existing international standards, there is no confirmed that the correct color reproduction possible. Using environmentally ecological ink industries is expected to respond to environmental policy.

• Journal of the Korean Chemical Society
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• v.46 no.2
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• pp.164-168
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• 2002

SrGa$_2$S$_4$ : Eu is a green emitting phosphor which is applied for field emission display, and cathodoluminescence. Conventionally, SrGa$_2$S$_4$ : Eu is synthesized by solid state reaction, in which a mixture of SrCO$_3$, Ga$_2$O$_3$, and Eu$_2$O$_3$ is fired at high temperatures under flowing H$_2$S and Ar gases. In this study,SrGa$_2$S$_4$ : Eu phosphor is synthesized by using a decomposition method, where SrS, Eu complex, and Ga com-plex are used. The advantage of this method is that toxic H$_2$S gas and Ar gas are not used. The synthetic con-ditions and luminescent properties of SrGa$_2$S$_4$ : Eu phosphor are also investigated.

• The Journal of Korean Academy of Prosthodontics
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• v.39 no.3
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• pp.250-259
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• 2001

Since the late 1930s, acrylic resins have been the materials of choice for the fabrication of complete denture bases. It has excellent esthetic properties, adequate strength, low water sorption, and low solubility. But acrylic resin has disadvantage of processing shrinkage that reduces denture retention and accuracy of denture occlusion. Metals also have been used in denture base material. Metals used in denture bases display excellent strength and dimensional stability. The major disadvantages associated with metal denture bases include increased cost, difficulty in fabrication, compromised esthetic qualities, and inability to re-base. The purpose of this study is to compare the artificial tooth movements of complete dentures with resin bases and metal bases after curing, deflasking, polishing immersion in water for 1 week and 4 weeks. Twenty-four maxillary complete resin denture bases with artificial teeth were fabricated. Twelve of them were resin based and other twelve of them were metal based. Fine crosses were marked on the incisal edges of right central incisors and distobuccal cusps of be second molars. Measurements were done for the changes of distances of reference points at the time of wax denture, after deflasking after decasting after polishing after immersion in water for 1 week and 4 weeks Meaurements were done to the accuracy of 0.001mm with a measuring microscope. The results were as follows : 1. Metal base showed significantly less tooth movement than resin base after curing and decasting (p<0.01). 2. Metal base showed significantly less tooth movement than resin base after polishing (p<0.01). 3. After immersion in water for 1 week and 4 weeks, metal base showed less movement than resin base. Difference was significant for anterior-posterior distances (p<0.01), but not significant for molar-to-molar distance (p>0.01). 4. 1 week and 4 weeks of immersion failed to compensate the initial processing shrinkage of metal and resin bases (p>0.01).

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.93-96
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• 2009

The Al-doped ZnO (AZO) films were deposited on a glass substrate by RF magnetron sputtering in pure Ar and $Ar+H_2$ gas ambient at temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature range from 100 to 300 $^{\circ}C$, respectively. It was found that either the addition of hydrogen to the sputtering gas or the annealing treatment effectively reduced the resistivity of the AZO films. When the AZO films were annealed at the temperature of 300 $^{\circ}C$ for lhr in a hydrogen atmosphere, the resistivity decreased from $2.60{\times}10^{-3}\;{\Omega}cm$ to $8.42{\times}l0^{-4}\;{\Omega}cm$ for the film deposited in pure Ar gas ambient. Under the same annealing conditions of temperature and hydrogen ambient, the resistivity of AZO films deposited in the $Ar+H_2$ gas mixture decreased from $8.22{\times}l0^{-4}\;{\Omega}cm$ to $4.25{\times}l0^{-4}\;{\Omega}cm$. The lowest resistivity of $4.25{\times}l0^{-4}\;{\Omega}cm$ was obtained by adding hydrogen gas to the deposition and annealing process. X-ray diffraction (XRD) pattern of all films showed preferable growth orientation of (002) plane. The average transmittance is above 85 % and in the range of 400-1000 nm for all films.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.