• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.

• Journal of IKEEE
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• v.23 no.3
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• pp.962-970
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• 2019

In this paper, the non-isolation, high-efficiency and high-voltage-output DC-DC converter using the self-driven synchronous switch is proposed. The proposed converter achieves high-voltage-output by applying a tapped inductor to the conventional boost DC-DC converter structure, and it reduces the voltage stress of main switch applying the lossless capacitor-diode (LCD) snubber to the switch. And the proposed converter applies the synchronous switch instead of the diode to the output part, and thus it resolves the reverse recovery problem and achieves high-efficiency. The synchronous switch of proposed converter uses the self-driven method and has a simple structure. In this paper, the operation principle of proposed converter is explained, and then, a design example of the converter prototype is presented. And the characteristics of the proposed converter are shown through experimental results of the prototype made with the designed circuit parameters.

• Journal of Advanced Navigation Technology
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• v.27 no.4
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• pp.463-468
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• 2023

In this paper, we proposed reconfigurable dual polarization patch array antenna that can select two polarizations(Vertical, RHCP) using defected ground structure and Pin diode. The proposed antenna was designed arranging a circular polarization patch antenna implemented with a square microstrip patch and two slots 3x3 at 25.8mm placed, a half-wavelength of 5.8 GHz. Conect the pin diode and the capacitor to the slot diagonally placed on the ground of each antennas, and select polarization using the open/short operating according to the application of DC voltage to the pin diode. As a result of the design, the gain of the antenna is 11.7 dBi at vertical polarization and 11.6 dBic at RHCP. The axial ratio is 20.3 dB at 1.8 dB vertical polarization at RHCP. Mutual Coupling is Maximum to -20.8 dB for vertical polarization and Maximum to -30.1 dB for RHCP.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.35-40
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• 2005

In this paper, we designed and fabricated the variable impedance line by using the DGS(Defected Ground Structure) which is useful in mounting the external lumped elements. Also we used a varactor diode as Control device stuff at the proposed variable impedance line. We are able to change the impedance of transmission line as varied the capacitance of varactor diode by adjusting DC bias. The impedance variation of the proposed DGS line is about maximum 70 Ω. We will study about the application of DAM(Direct antenna modulation) in the future work.

• Journal of Power Electronics
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• v.7 no.4
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• pp.301-309
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• 2007

The flyback converter is one of the most attractive isolated converters in small power applications because of its simple structure. However, it suffers from high device stress, large transformer size, and high voltage stress across its switch and diode. To solve these problems a new cost-effective PWM single-switch isolated converter is proposed. The proposed converter has no output filter inductor, reduced voltage stress on the secondary devices, and reduced transformer size. Moreover, the switch turn-off loss is reduced and no dissipative snubber across the secondary diode is required. Therefore, it features a simple structure, a low cost, and high efficiency. The operational principle and characteristics of the proposed converter are presented and compared with the flyback converter and then verified experimentally.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.131-134
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• 2007

An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.10-10
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• 2010

ESD (Electrostatic Discharge) phenomenon occurs in everywhere and especially it damages to semiconductor devices. For ESD protection, there are some devices such as diode, GGNMOS (Gate-Grounded NMOS), SCR (Silicon-Controlled Rectifier), etc. Among them, diode and GGNMOS are usually chosen because of their small size, even though SCR has greater current capability than GGNMOS. In this paper, a novel SCR is proposed on the SOI (Silicon-On-Insulator) structure which has $1{\mu}m$ film thickness. In order to design and confirm the proposed SCR, TSUPREM4 and MEDICI simulators are used, respectively. According to the simulation result, although the proposed SCR has more compact size, it's electrical performance is better than electrical characteristics of conventional GGNMOS.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.39-43
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• 2005

We proposed a structure for a 1.55 ㎛ strained separate confinement heterostructure (SCH) multi- quantum well (MQW) superluminescent diode (SLD), having a tapered active region. SLD was fabricated through a two-step procedure: the first step being metal organic chemical vapor deposition (MOCVD) and the second-step being liquid phase epitaxy (LPE). We used a 15 laterally tilted stripe and window region to suppress the lasing action of the SLD. The performance of the SLD showed output power of 11 mW with no lasing under 200 mA pulse driving. The full-width at half-maximum was 42 nm at 200 mA, 25℃.

• Applied Microscopy
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• v.27 no.3
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.4
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• pp.157-163
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• 1984

The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.