• Title/Summary/Keyword: diode laser

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Photodynamic therapy with chlorin e6-induced cervical cancer cell death (Chlorin e6의 농도별 Photodynamic therapy을 통한 자궁경부암 세포의 사멸도 측정)

  • Lee, Eonjin;Choe, Se-woon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.10a
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    • pp.323-325
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    • 2022
  • In this paper, after administration of Chlorin e6 to kill cervical cancer cells, PDT (photodynamic therapy) using laser or LED was studied for Ce6 concentration and apoptosis by administration time. After photostimulation was applied to cervical cancer cells, qualitative and quantitative evaluation through imaging and quantitative evaluation using CCK-8 were performed. As a result of the experiment, as the concentration of Ce6 increased, a large amount of cells were killed, and it was confirmed that the Ce6+PDT test group killed more. When comparing the LED and the laser, the laser was able to kill cells only at a local location, and the LED showed the result that it was possible to kill the cells in a wide range. In addition, when irradiating a local location, such as a laser, when measuring the cell viability, it is judged to be accurate to image processing the location.

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Process window of simultaneous transfer and bonding materials using laser-assisted bonding for mini- and micro-LED display panel packaging

  • Yong-Sung Eom;Gwang-Mun Choi;Ki-Seok Jang;Jiho Joo;Chan-mi Lee;Jin-Hyuk Oh;Seok-Hwan Moon;Kwang-Seong Choi
    • ETRI Journal
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    • v.46 no.2
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    • pp.347-359
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    • 2024
  • A simultaneous transfer and bonding (SITRAB) process using areal laser irradiation is introduced for high-yield and cost-effective production of mini- or micro-light-emitting diode (LED) display panels. SITRAB materials are special epoxy-based solvent-free pastes. Three types of pot life are studied to obtain a convenient SITRAB process: Room temperature pot life (RPL), stage pot life (SPL), and laser pot life (LPL). In this study, the RPL was found to be 1.2 times the starting viscosity at 25℃, and the SPL was defined as the time the solder can be wetted by the SITRAB paste at given stage temperatures of 80℃, 90℃, and 100℃. The LPL, on the other hand, was referred to as the number of areal laser irradiations for the tiling process for red, green, and blue LEDs at the given stage temperatures. The process windows of SPL and LPL were identified based on their critical time and conversion requirements for good solder wetting. The measured RPL and SPL at the stage temperature of 80℃ were 6 days and 8 h, respectively, and the LPL was more than six at these stage temperatures.

Study on Fiber Laser Annealing of p-a-Si:H Deposition Layer for the Fabrication of Interdigitated Back Contact Solar Cells (IBC형 태양전지 제작을 위한 p-a-Si:H 증착층의 파이버 레이저 가공에 관한 연구)

  • Kim, Sung-Chul;Lee, Young-Seok;Han, Kyu-Min;Moon, In-Yong;Kwon, Tae-Young;Kyung, Do-Hyun;Kim, Young-Kuk;Heo, Jong-Kyu;Yoon, Ki-Chan;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.430-430
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    • 2008
  • Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

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Trends of Deep UV-LED Technology for the Pathogen and Biotoxin Aerosol Detection System (병원균 및 생물독소 탐지시스템을 위한 원자외선 LED 기술동향)

  • Chong, Eugene;Jeong, Young-Su;Choi, Kibong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.5
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    • pp.277-284
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    • 2015
  • The humans are under attack involving the hazardous environment and pathogen/biotoxin aerosol that is realistic concerned. A portable, fast, reliable, and cheap Pathogen and Biotoxin Aerosol threat Detection(PBAD) trigger is an important technology for detect-to-protect and detect-to-treat system because the man-made biological terror is a fast and lethal infection. The ultraviolet C(UVC) wavelengths light source is key issue for PBAD that is sensitive because of strong fluorescence cross section from fluorescent amino acids in proteins such as tryptophan and tyrosine. The UVC-light emitting diode(LED) is emerging light source technology as alternative to laser or lamps as they offer several advantages. This paper discussed about the design consideration of UVC-LED for the PBAD system. The UVC-LED and PBAD technology, currently available or in development, are also discussed.

Photodynamic Therapy Using a 632 nm Diode Laser on Otitis Externa of the Dog (635 nm Photodynamic Therapy (PDT)를 이용한 개의 난치성 외이염 치료)

  • Lee, Sug Man;Cho, Eun-Sang;Lim, Hyun Soo;Kim, Rachel;Son, Hwa-Young
    • Journal of Veterinary Clinics
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    • v.31 no.1
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    • pp.66-69
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    • 2014
  • Photodynamic therapy (PDT) is an effective method for infectious disease, but as yet, no clinical trial on otitis externa has been conducted in animals. This report describes 4 cases of PDT treatment on severe otitis externa in canine. Four canines were treated with various concentrations of 5-aminolevulinic acid hydrochloride (5-ALA) and with various J (second ${\times}$ power) and irradiated by light-emitting diode light source at 635 nm, respectively. After the PDT applications, canines incubated in the dark for 5 or 6 hr. All patients showed clinical resolution of otitis externa after PDT treatment at the dose of 0.16~0.3 g ALA and J (54~162 $J/cm^2$). On the basis of these findings, PDT can be considered to be a new therapeutic approach to severe otitis externa in canine.

Light Amplification in Diode-pumped Cesium Vapor Cell (다이오드 펌프 세슘 원자 증기에서의 증폭)

  • Hwang, Jongmin;Jeong, Taek;Moon, Han Seb
    • Korean Journal of Optics and Photonics
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    • v.29 no.6
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    • pp.247-252
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    • 2018
  • We report amplification of a small signal in a diode-pumped Cs vapor cell with 500 torr of ethane buffer gas, in the low-pump-power regime of 200 mW or less. For efficient amplifier operation, the pump and signal beams were coupled to a single-mode optical fiber, and completely overlapped in the Cs vapor cell. We investigated the amplification of the small signal according to cell temperature, signal power, and pump power. An amplification factor of 56 was achieved under the conditions of cell temperature of $115^{\circ}C$, signal power of 0.1 mW, and pump power of 200 mW.

Characteristics of two extended-cavity diode lasers phase-locked with a 9.2 CHz frequency offset (9.2 GHz 주파수 차이로 위상잠금된 두 외부 공진기 다이오드 레이저의 제작 및 특성 조사)

  • Kwon, Taek-Yong;Shin, Eun-Ju;Yoo, Dae-Hyuk;Lee, Ho-Sung;In, Min-Kyo;Cho, Hyuk;Park, Sang-Eon
    • Korean Journal of Optics and Photonics
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    • v.13 no.6
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    • pp.543-547
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    • 2002
  • We have constructed two extended-cavity diode lasers which are phase-locked with a 9.2 GHz frequency offset. We adopted a digital servo circuit for the phase-locking. The relative linewidth of the phase-locked lasers was less than 2 Hz. Using the measured beat spectrum, we found the carrier concentration to be about 93 %. We measured phase noise and relative frequency stability of the lasers. The Allan deviation at the gate time of 20 s was $2.7{\times}10^{-19}$.

Analysis of Leakage Current of a Laser Diode by Equivalent Circuit Model (등가회로 모델에 의한 레이저다이오드의 누설전류 해석)

  • Choi, Young-Kyu;Kim, Ki-Rae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.2
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    • pp.330-336
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    • 2007
  • A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

Effect of the low level light irradiation to NTacSam:SD tissue cell culture (NTacSam:SD의 조직세포 배양에 저출력 광원의 효과)

  • Kim, Tae-Gon;Kim, Toung-Pyo;Park, No-Bong;Lee, Ho-Sic;Park, Yong-Pil;Cheon, Min-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.423-423
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    • 2009
  • Currently, lasers are one of the most popular light sources in use for medical treatment. Many studies on low power lasers are being done in cell culture or through animal tests and most report different findings, making it difficult to verify their true effects. There are shifts in trends of studies from laser and LED that are expensive and generate heat problem to LED that are economically effective and safe. Its near infrared rays can penetrate deep into skin or muscle, up to 23 cm, without causing thermal damage or impairing neighboring tissues. This study verified the performance and effectiveness of an LED irradiator that was designed to emit similar wavelengths to that of a laser and thus could be used instead of a low level laser therapy in experiments on animals. And then, each experiment was performed to irradiation group and non-irradiation group for NTacSam:SD tissue cells. MIT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of NTacSam:SD tissue cells was verified in irradiation group as compared to non-irradiation group. The fact that specific wavelength irradiation has an effect on cell vitality and proliferation is known through this study.

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The Research on the Heated CWDM(Coarse Wavelength Division Multiplexing) Optical Transceiver for the Wavelength Compensation at the Low Temperature (저온 파장 보상을 위한 히터 내장형 CWDM(Coarse Wavelength Division Multiplexing) 광 송수신기에 관한 연구)

  • Kwon, Yoon-Koo;Park, Kyoung-Su;Lee, Ji-Hyun;Kim, Chang-Bong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.3
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    • pp.1263-1269
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    • 2012
  • This paper is the research on the heated CWDM optical transmitter for the wavelength compensation at the low temperature. In general, the wavelength deviation of DFB laser is around 0.1 nm/C. The wavelength of DFB laser shifts to longer(shorter) wavelength according to the temperature increase(decrease). Typical CWDM optical communication network has 20 nm channel spacing from reference center wavelength per each channel. There is some limitation problem in the range of operating temperature due to the channel interference. For solving the limited temperature range problem, especially at the low temperature, we use the heater on the DFB laser. As a result, we could realize the CWDM optical transmitter to meet +/-6.5 nm from reference center wavelength in the range of temperature at $-40{\sim}+85^{\circ}C$, which is applicable to the industrial field.