• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.107-107
• /
• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.4
• /
• pp.598-603
• /
• 1990

This study evaluates the performance of an optical receiver for binary phase shift keying (BPSK) signals in the presence of short noise originating from the photo diode and phase noise of the optical source. The case of using I.O. hybrid compare with the fiber optic hybrid to mix received optical signal and laser local oscillator signal. The impact of these noise is minimized if loop natural frequency and power split ratio between data and carrier recovery branch are choosen optimally. Then it is obtained that required laser linewidt to achieve a BER of 10**-9. The results are the same except theat in case of using the fiber optic hybrid the required optical power is twice as much as the I.O. hybrid.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 1999.05a
• /
• pp.170-174
• /
• 1999

The main scale of linear scale greatly affects on the precision of displacement measurement. Especially when needing the long range measurement, the length of main scale should be increased accordingly. In this paper, we propose a linear scale that uses laser interference pattern as main scale for long range measurement. The linear scale is similar to Michelson interferometer excepting that the reference mirror is tilted so as to obtain interference fringe pattern and a grating panel is attached on a quadratic photo diodes. Four kinds of grating having phase differences of 0, $\pi$ /4, $\pi$ /2, 3 $\pi$ /4 are arranged on the panel. The experimental results show that signals of - quadratic photo diode, A, B,$\overline{A}$ and $\overline{B}$ are cosine wavelike and successive signals have phase difference of $\pi$/4 each other. So the proposed method can achieve improved measurement resolution.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.1
• /
• pp.11-20
• /
• 2002

The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.246-246
• /
• 2010

In this paper, we investigated the diffraction grating efficiency on AsSeS and Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The Chalcogenide film thickness was 0.5um and Ag thin film was varied from 10nm and 20nm. Diffraction efficiency was obtained from (P:P) polarized Diode Pumped Solid State laser(DPSS, 532.0nm: 200mW) beam on AsSeS and Ag/AsSeS thin films. As a results, diffraction grating was not formed at AsSeS thin film but at Ag-doped AsSeS thin film, diffraction grating was formed well compare with the former.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.19-22
• /
• 1998

In this work, nonlinear crystals are investigated as investigated ad future diode pumped host laser materials in the green. Optical properties( absorption, emission, secind harmonic generation, and continuous wave lader oscillation in the green) of the most relevant neodymium activeated oxide lader crystals{{{{ ({LiNbO }_{ 3}:MgO, YAI({BO }_{3})_{4} and {LaBGeO }_{ 5})}}}} are investigated and compared under similar experimental conditions

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.1
• /
• pp.91-100
• /
• 1986

The nonlinear rate equations are solved analytically by using the singular perturbation method to study effects of the spontaneous emission factor and the photon lifetime on the primary resonance and the first subharmonic generation(i.e., the onset of the periocd-doubling route to chaos). By large signal modulation of Hitachi CSP laser HLP 1400, the resonance frequency shift than 100 ps with 1 GHz repetition rate are generated. The experimental observations are in reasonable agreement with the theoretical results obtained using measured parameters of the rate equations.

• Journal of the Korean Magnetics Society
• /
• v.14 no.6
• /
• pp.228-231
• /
• 2004

We have studied local magnetization reversal and magnetic properties induced by Laser annealing method in the strip-patterned Ta/NiFe/FeMn/Ta and Ta/NiFe/FeMn/NiFe/Ta multilayers fabricated by ion-beam deposition. The films were exposed to the emission of the DPSS (Diode Pumped Solid State, Nd:YAG) laser under 600 G. The laser beam intensity increased up to 440 mW. When the laser illuminated the patterned film with the power of above 200 m W, the intensity of MR peak located in +87 Oe shrunk. A new MR peak was generated at -63 Oe. When the laser power is 400 mW, the location of positive MR peak(H$\sub$ex/) was changed slightly from +87 Oe to +76 Oe, and the MR ratio was decreased from 0.9% to 0.1 %. On the other hand, the new (negative) MR peak shifted from -63 Oe to -80 Oe, with the MR ratio increased up to 0.3%. As the illuminated area expanded, the intensity of opposite MR peak increased and it of negative MR peak decreased. This proved that the local reversal of exchange biasing should be realized by laser annealing.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.4
• /
• pp.11-17
• /
• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.7 s.349
• /
• pp.1-6
• /
• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.