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Thermodynamic Analysis of the MOVPE Growth of Inx Ga N₁_x
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A. Koukitu;N. Takahashi;T. Taki;H. Seki
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J. Cryst. Growth
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2 |
High-Quality GaInN/GaN Multiple Quantum Wells
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M. Koike;S. Yamasaki;S. Nagai;N. Koide;S. Asami;H. Amano;I. Akasaki
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Appl. Phys. Lett.
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3 |
Luminescence Spectra from InGaN Multiquantum Wells Heavily Doped with Si.
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T. Deguchi;A. Shikanai;K. Torii;T. Sota;S. Chichibu;S. Nakamura
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Appl. Phys. Lett.
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4 |
Hole Compensation Mechanism of P-Type GaN Films
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S. Nakamura;N. Iwasa;M. Senoh;T. Mukai
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Jpn. J. Appl. Phys.
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5 |
Al Ga N(0WxW1) Ultraviolet Photoconductors Grown on Sapphire by Metal-Organic Chemical-Vapor Deposition
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D. Walker;X. Zhang;A. Saxlet;P. Kung;J. Xu;M.Razeghi
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Appl. Phys. Lett.
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6 |
Solid Phase Immiscbility in GaInN
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I.H. Ho;G.B. Stringfellow
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Appl. Phys. Lett.
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7 |
Structure of GaN films Grown by Hydride Vapor Phase Epitaxy
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L.T. Romano;B.S. Krusor;R.J. Molnar
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Appl. Phys. Lett.
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8 |
High Speed;Low Noise Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on GaN
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K. Walker;E. Monroy;P. Kung;M. Hamilton;F.J. Sanchez;J. Diaz;M. Razeghi
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Appl. Phys. Lett.
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9 |
Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN
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A. Saxler;K.S. Kim;K. Walker;P. Kung;X. Zhang;G. Brown;W.C. Mitchel;M. Razeghi(ed.)
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Gorodn Davies and Maria Helena Nazare Materials Science Forum
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10 |
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O. Madelung 2nd(ed.)
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Semiconductors Basic Data
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11 |
Schottky Battier Detectors on GaN for Visible-Blind Ultraviolet Detection
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Q. Chen;J.W. Yang;A. Osinsky;S. Gangopadhyay;B. Lim;M. Lim;A. Anwar;M. Asif Khan;K. Kuksenkov;H. Temkin
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Appl. Phys. Lett.
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12 |
Very Low Current Metal-Semiconductor-Metal Ultraviolet Photodetectors Fabricated on Single-Crystal GaN Epitaxial Layers
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J.C. Carrano;P.A. Grudowski;C.J. Eiting;R.D. Dupuis;J.C. Campbell
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Appl. Phys. Lett.
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13 |
Solar-Blind AlGaN Photodiodes with Very Low Cutoff Wavelength
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D. Walker;V. Kumar;K. Mi;P. Sandvik;P. Kung;X.H. Zhang;M. Razeghi
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Appl. Phys. Lett.
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14 |
Subband Emissions of InGaN Multi-Quantum-Well Laser Diodes Under Room-Temperature Continuous Wave Operation
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S. Nakamura;M. Senoh;Y. Sugahama;N. Iwasa;T. Yamada;T. Matsushita;Y. Sugimoto;H. Kiyoku
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Appl. Phys. Lett.
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15 |
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
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S. Nakamura;M. Senoh;N. Iwasa;S. Magahama
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Jpn. J. Appl. Phys.
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16 |
Study of Monlinear Optical Effects in GaN:Mg Epitaxial Film
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H.Y. Zhang;X.H. He;Y.H. Shih;M. Schurman;Z.C. Feng;R.A. Stall
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Appl. Phys. Lett.
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17 |
Catastrophic Optical Damage in GaInN Multiple Quantum Wells
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D.A. Cohen;T. Margalith;A.C. Abare;M.P. Mack;L.A. Coldren;S.P. DenBaars;D.R. Clarke
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Appl. Phys. Lett.
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18 |
GaN.GaAIN and AIN for use in UV Detectors for Astrophysics:an Update
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[
P. Kung;A. Saxler;X. Zhang;D. Walker;M. Razeghi;Gail J. Brown;Manijeh Razeghi(eds.)
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Photodetectors:Materials and Devices
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19 |
Photovoltaic Effects in GaN Structures with p-n Junction
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X. Zhang;P. Kung;D. Walker;J. Piotrowski;A. Rogalski;A. Saxler;M. Razeghi
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Appl. Phys. Lett.
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20 |
GaInN/GaN-Heterostructures and Quantum Wells Growm by Metalorganic Vapor-Phase Epitaxy
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A. Sohmer;J. Off;H. Bolay;V. Harle;V. Syganow;Jin Seo Im;V. Wagner;F. Adler;Andreas Hangleiter;A. Dornen;F. Scholz;D. Brunner;O. Ambacher;H. Lakner
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MRS Internet J. Nitride Semiconductor Res.
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21 |
High quality AIN and GaN Epilayers Grown on (001) Sapphire (100) and (111) Silicon Substrates
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P. Kung;A. Saxler;X. Zhang;D. Walker;T.C. Wang;I. Ferguson;M. Razeghi
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Appl. Phys. Lett.
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22 |
Solar-Blind AlGaN-Based Inverted Heterostructure Photodiodes
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E.J. Tarsa;P. Kozodoy;J. Ibbetson;B.P. Keller;G. Parish;U. Mishra
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Appl. Phys. Lett.
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23 |
Subband Emissions of InGaN Multi-Quantum-Well Laser Diodes Under Room-Temperature Continuous Wave Operation
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S. Nakamura;M. Senoh;S. Nagahama;N. Iwasa;T. Yamada;T. Matsushita;Y. Sugimoto;H. Kiyoku
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Appl. Phys. Lett.
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24 |
Lattice Constants;Thermal Expansion and Compressibility of Gallium Nitride
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M. Leszczynski;T. Suski;P. Perlin;H. Teisseyre;I. Grzegory;M. Bockowski;J. Jun;S. Porowski;J. Major
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J. Phys. D
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25 |
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O. Madelung(ed.)
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Semiconductors:group IV elements and III-V compound
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26 |
High Mobility Two-Dimensional Electron Gas in AIGanM/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy
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C.R. Elsass;I.P. smorchkova;B. Heying;E. Haus;P. Fini;K. Maranowski;J.P. Ibbetson;S. Deller;P.M. Petroff;S.P. Denbaars;U.K. Mishra;J.S. Speck
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Appl. Phys. Lett.
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27 |
GaN Doped with Sulfur
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A. Saxler;P. Kung;X. Zhang;K. Walker;J. Solomon;M. Ahoujja;W.C. Mitchel;H.R. Vydyanath;M. Razeghi(ed.)
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Gordon Davies and Maria Helena Nazare Materials Science Forum
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28 |
High Quality Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates
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A. Saxler;P. Kung;C.J. Sun;E. Bigan;M. Razeghi
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Appl. Phys. Lett.
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29 |
HighQuality InGaN Films Grown on GaN films
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S. Nakamura;T. Mukai
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Jpn. J. Appl. Phys.
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30 |
Spatially Resolved Cathodoluminescence Spectra of InGaN Quantum Wells
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S. Chichibu;K. Wada;S. Nakamura
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Appl. Phys. Lett.
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31 |
Activation Energies of Si Donors in GaN
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W. Gotz;N.M. Johnson;C. Chen;H. Liu;C. Kuo;W. Imler
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Appl. Phys. Lett.
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32 |
Gain Characteristics of InGaN/GaN Quantum Well Diode Lasers
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Y.-K. Song;M. Kuball;A.V. Nurmikko;G.E. Bulman;K. Doverspike;S.T. Sheppard;T.W. Weeks;M. Leonard;H.S. Kong;H. Kieringer;J. Edmond
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Appl. Phys. Lett.
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33 |
Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN film Using an AIN Buffer Layer
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H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda
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Appl. Phys. Lett.
DOI
ScienceOn
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34 |
Observation of Room Temperature Surfaceemitting Stumulated Emission from GaN:Ge by Optical Pumping
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X. Zhang;P. Kung;A. Saxler;D. Walker;M. Razeghi
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J. Appl. Phys.
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35 |
AlGaN Ultraviolet Photoconductors Grown on Sapphire
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D. Walker;X. Zhang;P. Kung;A. Saxler;S. Javadpour;J. Xu;M. Razeghi
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Appl. Phys. Lett.
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36 |
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Nichia Corporation
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37 |
High-Power InGaN Single-Quantum-Well-Structure Blue and Violet Light-Emitting Diodes
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S. Nakamura;M. Senoh;N. Iwasa;S. Nagahama
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Appl. Phys. Lett.
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38 |
Kinetics of Photoconductivity in n-type GaN Photodetector
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P. Kung;X. Zhang;D. Walker;A. Saxler.J. Piotrowski;A. Rogalski;M. Razeghi
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Appl. Phys. Lett.
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39 |
P-type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation(LEEBI)
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[
H. Amano;M. Kito;K. Hiramatsu;I.Akasaki
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Jpn. J. Appl. Phys.
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40 |
Visible Blind GaN p-i-n Photodiodes
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D. Walker;A. Saxler;P. Kung;X. Zhang;M. Hamilton;J. Diaz;M. Razeghi
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Appl. Phys. Lett.
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41 |
Improvements of Metal-Semiconductor-Metal GaN Photoconductors
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Z.C. Huang;D.B. Mott;P.K. Shu;J.C. Chen;D.K.Wickenden
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J. Electronic Mater.
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42 |
Solid Phase Immiscibility in GaInN
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I.H. Ho;G.B. Stringfellow
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Appl. Phys. Lett.
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43 |
Semiconductor Ultraviolet Dtectors
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M. Razeghi;A. Rogalski
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J. Appl. Phys.
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44 |
Thermal Annealing Effects on P-Type Mg -Doped GaN Films
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S. Nakamura;T. Mukai;M. Senoh;N. Iwasa
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Jpn. J. Appl. Phys.
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45 |
Aluminum Gallium Nitride Short-Period Superlattices Doped with Magnesium
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A. Saxler;W.C. Mitchel;P. Kung;M. Razeghi
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Appl. Phys. Lett.
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46 |
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
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K. Hiramatsu;Y. Kawaguchi;M. Shimizu;N. Sawaki;T. Zheleva;Robert F. Davis;H. Tsuda;W. Taki;N. Kuwano;K. Oki
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MRS Intenet J. Nitride Semiconductor Res.
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47 |
Longitudinal Mode Spectra and Ultrashort Pulse Generation of InGaN Multiquantum well Structure Laser diodes
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S. Makamura;M. Senoh;S. Nagahama;N. Iwasa;T. Yamada;T. Matsushita;Y. Sugimoto;H. Kiyoku
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Appl. Phys. Lett.
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48 |
High-Brightness InGaN Blue, Green, and Yellow Light-Emitting Diodes with Quantum Well Structures
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[
S. Nakamura;M. Senoh;N. Iwasa;S. Nagahama
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Jpn. J. Appl. Phys.
|
49 |
Photoluminescence Study of GaN
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[
X. Zhang;P. Kung;A. Saxler;D. Walker;T. Wnag;M. Razeghi
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Acta Physica Polanica
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50 |
Role of Self-Formed InGaN Qunatum Dots for Exciton Localization in the Purple Laser Diode Emitting at 420nm
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Y. Narukawa;Y. Kawakam;M. Funato;S. Fujita;S. Fujita;S. Nakamura
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Appl. Phys. Lett.
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51 |
Pyroelectricity in Gallium Nitride Thin films
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A.D. Bykhovski;V.V. Kaminski;M.S. Shur;Q.C. Chen;M.A. Khan
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Appl. Phys. Lett.
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52 |
Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well structure Laser Diodes with a Lifetime of 27hours
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[
S. Nakamura;M. Senoh;S. Nagahama;N. Iwasa;T. Yamada;T. Matsushita;H. Kiyoku;Y. Sugimoto
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Appl. Phys. Lett.
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53 |
AlλGa₁_xN Based Materials and Heterostructures
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[
P. Kung;A. Saxler;D. Walker;X. Zhang;R. Lavado;K.S. Kim;M. Razeghi
] /
Mater. Res. Soc. Proc.
|
54 |
Luminescence Spectra from InGaN Multiquantum Wells Heavily Doped with Si
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[
T. Deguchi;A. Shikanai;K. Torii;T. Sota;S. Chichibu;S. Nakamura
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Appl. Phys. Lett.
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55 |
Linear-and Nonlinear Optical Effects in GaN:Mg Epitaxial Film
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[
J. Miragliotta ;D.K. Wkckenden;T.J. Kistenmacher;W.A. Bryden
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J. Opt. Soc. Am.
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56 |
GaInN/GaN Multiquantum Well Laser Diodes Grown by Low-Pressure MOCVD
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[
P. Kung;A. Saxler;K. Walker;A. Rybaltowski;X. Zhang;J. Diaz;M. Razeghi
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MRS Internet J. Nitride Semiconductor Res.
|
57 |
High Quality Visible -Blind AlGaNp-i-n Photodiodes
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[
E. Monroy;M. Hamilton;D. Walker;P. Kung;F.J. Sanchez;M. Razeghi
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Appl. Phys. Lett.
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58 |
Continuous-Wave Operation of InGaN/GaN/AlGaN-Based Laser Diodes grown on GaN Sbstrates
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[
S. Nakamura;M. Senoh;S. Nagahama;N. Iwasa;T. Yamada;T. Matsushita;H. Kiyoku;Y. Sugimoto;T. Kozaki;H. Umemoto;M. Sano;K. Chocho
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Appl. Phys. Lett.
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