• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.506-510
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• 2016

A triple-band (TB) oscillator was implemented in the TSMC $0.18{\mu}m$ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt $4^{th}$ order LC resonators to form a $6^{th}$ order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) mA and 2.4(2.29, 2.28) mW, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz. The die area of the triple-band oscillator is $0.835{\times}1.103mm^2$.

• IEIE Transactions on Smart Processing and Computing
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• 제5권2호
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• pp.71-76
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• 2016

A controller area network (CAN) receiver measures differential voltage on a bus to determine the bus level. Since 3.3V transceivers generate the same differential voltage as 5V transceivers (usually ${\geq}1.5V$), all transceivers on the bus (regardless of supply voltage) can decipher the message. In fact, the other transceivers cannot even determine or show that there is anything different about the differential voltage levels. A new CMOS RC oscillator insensitive supply voltage for clock generation in a CAN transceiver was fabricated and tested to compensate for this drawback in CAN communication. The system consists of a symmetrical circuit for voltage and current switches, two capacitors, two comparators, and an RS flip-flop. The operational principle is similar to a bistable multivibrator but the oscillation frequency can also be controlled via a bias current and reference voltage. The chip test experimental results show that oscillation frequency and power dissipation are 500 kHz and 5.48 mW, respectively at a supply voltage of 3.3 V. The chip, chip area is $0.021mm^2$, is fabricated with $0.18{\mu}m$ CMOS technology from SK hynix.

• Journal of electromagnetic engineering and science
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• 제6권2호
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• pp.92-97
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• 2006

In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2006년도 하계학술대회
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• pp.179-182
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• 2006

This paper introduce a different-type voltage-controlled oscillator (VCO) for PLL frequency synthesizer, And also the architecture of a high speed low-power-consumption CMOS dual-modulus frequency divider is presented. It provides a new approach to high speed operation and low power consumption. The proposed circuits simulate in 0.35 um CMOS standard technology.

• Journal of electromagnetic engineering and science
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• 제7권2호
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• pp.64-68
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• 2007

An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{\times}0.90mm^2$ including buffer and pads.

• 전자공학회논문지SC
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• 제40권6호
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• pp.8-15
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• 2003

본 논문에서는 차동 링 발진기의 위상 잡음 특성을 향상시키기 위해 선형성을 개선한 차동 지연 셀을 소개한다. 기존의 가변 부하 저항을 사용한 차동 링 발진기는 넓은 주파수 튜닝 영역을 갖는 대신 가변 부하저항으로 사용한 MOSFET 소자의 비선형성으로 인해 위상 잡음 특성이 좋지 않았다. 이러한 문제점을 극복하기 위해, 가변 부하 저항의 선형성을 개선한 새로운 차동 지연 셀을 제안하였다. 제안한 지연 셀의 가변 부하 저항은 기존의 가변 부하 저항 보다 30%이상 선형성을 개선하였음을 확인하였다. 위상 잡음 특성을 비교하기 위해, Ali Hajimiri가 제안한 링 발진기의 위상 잡음 모델을 사용하였다. 제안한 지연 셀로 차동 링 발진기를 구성하여 위상 잡음 특성을 구한 결과, 같은 발진 주파수와 같은 전력소모에서 기존의 링 발진기보다 2∼3㏈c/㎐ 이상의 위상 잡음 특성이 향상된 결과를 얻게 되었다.

• Journal of electromagnetic engineering and science
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• 제16권4호
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• pp.229-231
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• 2016

A 180-GHz signal source based on a 65-nm CMOS technology has been developed in this study. The 180-GHz signal source consists of a 90-GHz fundamental-mode Colpitts oscillator and a 180-GHz frequency doubler. A coupled-line is employed to couple two oscillator cores for generating a differential signal, which is delivered to the input of the differential-mode doubler. The fabricated signal source operates from 181.2 to 182.4 GHz with output power varying from -15.3 to -10.8 dBm. The peak output power was -10.53 dBm at 181.3 GHz with a DC power consumption of 42 mW, and the associated phase noise was -71 dBc/Hz at 1 MHz offset.

• 대한전자공학회논문지
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• 제11권3호
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• pp.32-35
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• 1974

SCR발진회로를 등가회로와 실험식을 이용하여 2배의 비선형미분방정식으로 해석하고, 발진회로의 상흔도와 안정성을 고찰한다. 발진파형은 고주파성분을 갖이고 있고 상황점은 궤도상에서 평형점을 향하고 있으므로 이 발진회로는 안정되고 있음을 알았다.

• 한국전자통신학회논문지
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• 제11권2호
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• pp.191-196
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• 2016

Van der Pol 발진기는 비선형 제동 현상을 가진 비보존 발진기로서 높은 진폭에서의 에너지는 소산적이며 낮은 진폭들에서는 생성되는 구조를 가진다. 본 논문에서는 분수 차수를 가지는 Van der Pol 발진기 모델에서 주기적 외력을 인가하였을 경우 분수차수로 표현되는 미분 방정식에서 분수차수의 파라미터 변화에 따른 리미트 사이클이 변화 상태를 확인하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.202-207
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• 2015

A CMOS relaxation oscillator, with high robustness over process, voltage and temperature (PVT) variations, is designed in $0.18{\mu}m$ CMOS. The proposed oscillator, consisting of full-differential charge-discharge timing circuit and switched-capacitor based voltage-to-current conversion, could be expanded to a simple open-loop frequency synthesizer (FS) with output frequency digitally tuned. Experimental results show that the proposed oscillator conducts subcarrier generation for frequency-modulated ultra-wideband (FM-UWB) transmitters with triangular amplitude distortion less than 1%, and achieves frequency deviation less than 8% under PVT and phase noise of -112 dBc/Hz at 1 MHz offset frequency. Under oscillation frequency of 10.5 MHz, the presented design has the relative FS error less than 2% for subcarrier generation and the power dissipation of 0.6 mW from a 1.8 V supply.