• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.506-510
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• 2016

A triple-band (TB) oscillator was implemented in the TSMC $0.18{\mu}m$ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt $4^{th}$ order LC resonators to form a $6^{th}$ order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) mA and 2.4(2.29, 2.28) mW, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz. The die area of the triple-band oscillator is $0.835{\times}1.103mm^2$.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.2
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• pp.71-76
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• 2016

A controller area network (CAN) receiver measures differential voltage on a bus to determine the bus level. Since 3.3V transceivers generate the same differential voltage as 5V transceivers (usually ${\geq}1.5V$), all transceivers on the bus (regardless of supply voltage) can decipher the message. In fact, the other transceivers cannot even determine or show that there is anything different about the differential voltage levels. A new CMOS RC oscillator insensitive supply voltage for clock generation in a CAN transceiver was fabricated and tested to compensate for this drawback in CAN communication. The system consists of a symmetrical circuit for voltage and current switches, two capacitors, two comparators, and an RS flip-flop. The operational principle is similar to a bistable multivibrator but the oscillation frequency can also be controlled via a bias current and reference voltage. The chip test experimental results show that oscillation frequency and power dissipation are 500 kHz and 5.48 mW, respectively at a supply voltage of 3.3 V. The chip, chip area is $0.021mm^2$, is fabricated with $0.18{\mu}m$ CMOS technology from SK hynix.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.92-97
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• 2006

In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.179-182
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• 2006

This paper introduce a different-type voltage-controlled oscillator (VCO) for PLL frequency synthesizer, And also the architecture of a high speed low-power-consumption CMOS dual-modulus frequency divider is presented. It provides a new approach to high speed operation and low power consumption. The proposed circuits simulate in 0.35 um CMOS standard technology.

• Journal of electromagnetic engineering and science
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• v.7 no.2
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• pp.64-68
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• 2007

An InGaP/GaAs HBT based differential Colpitts voltage control oscillator(VCO) is presented in this paper. In the VCO core, two switching transistors are introduced to steer the core bias current to save power. An LC tank with an inductor quality factor(Q) of 11.4 is used to generate oscillation frequency. It has a superior phase noise characteristics of -130.12 dBc/Hz and -105.3 at 1 MHz and 100 kHz frequency offsets respectively from the carrier frequency(1.566 GHz) when supplied with a control voltage of 0 volt. It dissipates output power of -5.3 dBm. Two pairs of on-chip base collector (BC) diodes are used in the tank circuit to increase the VCO tuning range(168 MHz). This VCO occupies the area of $1.070{\times}0.90mm^2$ including buffer and pads.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.6
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• pp.8-15
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• 2003

In this paper, the issue of the differential ring oscillator in designing low phase noise is linearity improvement of delay cell's load resistor. A novel differential delay cell that improves on the Maneatis load is proposed. The linearity improvement of load resistor results in lower phase noise in ring oscillator. For comparison of the phase noise characteristics, Ali Hajimiri's phase noise model is used. In order to have a low ISF(impulse sensitivity function), it is important to have a symmetry between rise time and fall time of oscillation waveform. The ISF value of ing oscillator based on the proposed delay cell is lower than that of the existing ring oscillators. Due to this result, the phase noise is improved by 2~3dBc/Hz for the same power dissipation and oscillation frequency.

• Journal of electromagnetic engineering and science
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• v.16 no.4
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• pp.229-231
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• 2016

A 180-GHz signal source based on a 65-nm CMOS technology has been developed in this study. The 180-GHz signal source consists of a 90-GHz fundamental-mode Colpitts oscillator and a 180-GHz frequency doubler. A coupled-line is employed to couple two oscillator cores for generating a differential signal, which is delivered to the input of the differential-mode doubler. The fabricated signal source operates from 181.2 to 182.4 GHz with output power varying from -15.3 to -10.8 dBm. The peak output power was -10.53 dBm at 181.3 GHz with a DC power consumption of 42 mW, and the associated phase noise was -71 dBc/Hz at 1 MHz offset.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.3
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• pp.32-35
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• 1974

The SCR oscillator is ctaracterized by the second order differential equation which is consistent with both its equivalent circuit and its empirical formula. It is found that the wave form of the SCR oscillator contains the components of higher harmonics and that this oscillator is static since its representative point on the phase tragectory has the sense directed to the equilifrium point.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.2
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• pp.191-196
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• 2016

Van der Pol's oscillators is non-conservative oscillator that having nonlinear damping phenomena. The energy of its system is dissipative at a high amplitude whereas its system creates the energy at low amplitude. This paper deals with the Van der Pol oscillator model with a fractional order when the external force apply into Van der Pol oscillator. This paper confirms the status of variation for the limit cycle according to the parameter variation of fractional order in the Van der Pol oscillator that can be represented by fractional differential equation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.202-207
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• 2015

A CMOS relaxation oscillator, with high robustness over process, voltage and temperature (PVT) variations, is designed in $0.18{\mu}m$ CMOS. The proposed oscillator, consisting of full-differential charge-discharge timing circuit and switched-capacitor based voltage-to-current conversion, could be expanded to a simple open-loop frequency synthesizer (FS) with output frequency digitally tuned. Experimental results show that the proposed oscillator conducts subcarrier generation for frequency-modulated ultra-wideband (FM-UWB) transmitters with triangular amplitude distortion less than 1%, and achieves frequency deviation less than 8% under PVT and phase noise of -112 dBc/Hz at 1 MHz offset frequency. Under oscillation frequency of 10.5 MHz, the presented design has the relative FS error less than 2% for subcarrier generation and the power dissipation of 0.6 mW from a 1.8 V supply.