• Transactions on Electrical and Electronic Materials
• /
• v.11 no.4
• /
• pp.149-154
• /
• 2010

With soaring public concerns of environmental issues, many researchers have started to carry out research on various related topics in many areas of science and engineering. This paper describes a brief outline of typical recent research results obtained in the author's laboratory on electrical and optical properties of dielectric materials, done aiming at contributing to green power technology.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1444-1446
• /
• 2009

The atmospheric pressure plasma polymerization of acrylate monomers was carried out to have dielectrics with easy preparation and high performance. The effects of discharge power, monomer concentration and deposition time on film properties were investigated using various characterization tools. With proper conditions, smooth dielectric layer of 100nm thickness was obtained. Dielectric property as organic dielectric layer has been studied for future applications in organic thin film transistors(OTFT).

• Journal of the korean Society of Automotive Engineers
• /
• v.13 no.2
• /
• pp.88-102
• /
• 1991

In this study, thermophysical properties of the ceramic dielectrics such as BaOTiO$_{2}$, SrOTiO$_{2}$, MgOTiO$_{2}$, were measured by a single rectangular pulse heating method. The values of thermal diffusivities, specific heats, and thermal conductivities were measured as a function of temperature range from room temperature to 1300k. The measured thermal properties of one group of ceramic material were compared with those of other group and discussed in detail in connection with the chemical composition. Thus, some criteria for thermal design with the electric-electronic ceramic material were proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.10
• /
• pp.870-875
• /
• 2002

Ba(Zn$_1$-xCox)TaO$_3$[BZCT] ceramics were Prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1450∼1550$\^{C}$ for 5 hr in air. The crystal structure of BZCT ceramics was investigated by the XRD. The microstructure of the specimens were observed by SEM. The structural properties of BZCT specimens were investigated as a function of composition and sintering temperature. All BZCT ceramics sintered over 1550$\^{C}$ were showed a polycrystalline complek perovskite structure without second phases and any unreacted materials. The density of BZCT (70/30) specimen sintered at 1550$\^{C}$ was 6.31g/㎤. In the case of the BZCT(70/30) ceramics sintered at 1550$\^{C}$ for 5 hours, dielectric constant, qualify factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value of 29, 16,468 at 10㎓ and -4.4 ppm/$\^{C}$, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.8
• /
• pp.56-62
• /
• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.

• Proceedings of the KSME Conference
• /
• 2003.11a
• /
• pp.1932-1938
• /
• 2003

We have applied spectroscopic ellipsometry to investigate $high-{\kappa}$ dielectric thin films and correlate their optical properties with fabrication processes, in particular, with high temperature annealing. The use of high-k dielectrics such as $HfO_{2}$, $Ta_{2}O_{5}$, $TiO_{2}$, and $ZrO_{2}$ as the replacement for $SiO_{2}$ as the gate dielectric in CMOS devices has received much attention recently due to its high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and optical density will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.220-221
• /
• 2007

Recently, imprint lithography have received significant attention due to an alternative technology for photolithography on high performance microelectronic devices. In this work, we investigated thermal stabilities and dynamic mechanical properties of dielectric materials for thermal imprint lithography. Curing behaviours, thermal stabilities, and dynamic mechanical properties of the dielectric materials cured with various curing agent and spherical filler were studied using dynamic differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), rheometer and universal test machine(UTM).

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.3
• /
• pp.75-78
• /
• 2010

In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.40 no.3
• /
• pp.285-294
• /
• 2020

This study investigated the use of Ground Penetrating Radar (GPR) over a two-decade period on public roads, focusing on the electromagnetic characteristics of the pavement dielectrics and attenuation. From the results, a typical range of characteristic value, influencing factors, and a correction method were suggested. The typical dielectrics of asphalt pavements were 4-7, as measured by an air-coupled 1 GHz GPR antenna. The dielectrics of concrete pavements were very large in the early age, but were drastically reduced with ageing. Ten years on, collection was in the range of 6-12. The dielectrics were proportional to the relative humidity (R.H.) of the atmosphere. The effects were reduced to one eighth with an overlay. Attenuation generally increased with thickness of the road layer, and also increased where there was damage. The GPR results could also vary depending on the weather conditions as well as on the characteristics of the GPR equipment, even at the same frequency. Therefore, GPR surveys should be performed on road surfaces without debris on a single, fine day. The reliability of the GPR analysis could be improved by cores and equipment calibration with other non-destructive test surveys.

• Korean Journal of Materials Research
• /
• v.18 no.7
• /
• pp.373-378
• /
• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.