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Property Variations of ZnO-based MOS Capacitor with Preparation Conditions  

Nam, H.G. (Electronic Engineering, Sun Moon University)
Tang, W.M. (Electrical & Computer Engineering, University of Toronto)
Publication Information
Journal of the Semiconductor & Display Technology / v.9, no.3, 2010 , pp. 75-78 More about this Journal
Abstract
In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.
Keywords
ZnO thin film; $HfO_2$; MIM capacitor; MOS capacitor; TTFT; UV ozone treatment;
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