• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.135-138
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• 2007

A novel technique to estimate the dielectric constant of ground material by means of air launching GPR is proposed. The technique is an application of SAR algorithm. A laboratory experiment was conducted to examine the technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.191-194
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• 1999

Recently, with the rapid development and demand for compactness of portable communications, the requirement for compact and low-cost filter is increasing. One of the methods for reducing size and cost is to use high dielectric constant and low loss dielectric material in filter. The other is new monoblock dielectric band-pass filter (BPF) which has holes in a single dielectric body without additional coupling elements. This structure effectively reduces the size and cost of the filters. For previous conventional coaxial type dielectric BPF, dielectric substrates were used for coupling between adjacent resonators and additional input and output ports were needed. Coupling between adjacent resonators of monoblock BPF can be otained via electrode pairs. Capacitances of electrode pair structure for coupling are intensively investigated by 3-D FEM. The BPF for PCS has been designed to have a 30 MHz pass-bandwidth with center frequency of 1855 MHz and an attenuation pole at below the passband using a commercial 3-D structure simulator.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.39-42
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• 2017

E-glass (electrical glass) fiber is the widely used as a reinforced composite material of PCBs (printed circuit boards). However, E-glass fiber is not stable because it has a dielectric constant of 6~7. On the other hand, D-glass (dielectric glass) fiber has a low dielectric constant of 3~4.5. Thus, it is adaptable for use as a reinforcing material of PCBs. In this study, we fabricated D-glass compositions with low dielectric constant, and measured the electrical and optical properties. In the glass composition, the boron content was changed from 9 to 31 wt%. To confirm the dependence of the dielectric constant on melting properties, D-glass with 22 wt% boron was melted at $1550^{\circ}C$ and $1650^{\circ}C$ for 2hrs. The glass melted at $1650^{\circ}C$ had a lower dielectric constant than the glass melted at $1550^{\circ}C$. Therefore, the D-glass with boron of 9~31 wt% was fabricated by melting at $1650^{\circ}C$ for 2hrs, and transparent clear glass was obtained. We identified the non-crystalline nature of the glass using an XRD (x-ray diffractometer) graph. The visible light transmittance values depending on the boron contents were measured and found to be 88.6 % ~ 82.5 %. Finally, the dielectric constant of the D-glass with 31 wt% boron was found to have decreased from 4.18 to 3.93.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.129-132
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• 1992

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.322-332
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• 2022

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.832-837
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• 2006

Antennas were fabricated by physical(adhesive) and chemical(deposition+plating) method on organic-inorganic composite material. And antennas were measured dielectric constant and gain. Dielectric constant of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness and number of conduction material composition. But antennas were fabricated by chemical method was reached to 90 % of dielectric material. Gain of antennas were fabricated by physical method was decreased with increase of adhesive tape thickness. But they were unrelated with conduction material composition. The other side antennas were fabricated by chemical method excelled more 0.8 dBic than antennas were fabricated by physical method in gain of antenna. Finally, chemical method can expect excellent product process because it can produce smaller size, higher gain and elimination of many handworks.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.960-967
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• 1997

• ETRI Journal
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• v.39 no.3
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• pp.390-397
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• 2017

In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

• Journal of IKEEE
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• v.25 no.1
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• pp.1-9
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• 2021

In this paper, a 4H-SiC UMOSFET was studied which is suitable for high voltage and high current applications. In general, SiO2 is a material most commonly used as a gate dielectric material in SiC MOSFETs. However, since the dielectric constant value is 2.5 times lower than 4H-SiC, it suffers a high electric field and has poor characteristics in the SiO2/SiC junction. Therefore, the static characteristics of a device with high-k material as a gate dielectric and a device with SiO2 were compared using TCAD simulation. The results show BV decreased, VTH decreased, gm increased, and Ron decreased. Especially when the temperature is 300K, the Ron of Al2O3 and HfO2 decreases by 66.29% and 69.49%. and at 600K, Ron decreases by 39.71% and 49.88%, respectively. Thus, Al2O3 and HfO2 are suitable as gate dielectric materials for high voltage SiC MOSFET.