• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.5
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• pp.1317-1324
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• 1996

An angular spectral inverse technique, applying the moment method procedure with a series expansion for the induced field in each enlarged cell, is suggested to reconstruct permittivity profiles of inhomogeneous dielectric objects and to reduce the ill-posedness inherent to inverse scattering problems. The angular spectral inverse scattering using the pulse basis function in enlarging the scatterer has the ill-posedness due to the input data of higher spectra. To reduce the number of higher spectra, enlarging the cell size and averaging over the cell with a suitable weighting function are found to play improtant roles for the reduction of ill-posedness of the angular spectral inverse scattering problems.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.1
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• pp.143-149
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• 1993

An approach is presented for efficient numerical integration of the Sormnerfeld type integrals pertinent to the microstrip surface Green's function arising in the problem of an electric current point source on an infinite planar grounded dielectric substrate. This approach, valid for both lossless and lossy dielectric substrates, is based on the deformation of the integration contour via a coordinate transformation and Cauchy's residue theory, and identifies clearly the effects of surface waves. I ts useful application is in a rigorous moment method analysis of micros trip antenna arrays and microstrip guided wave structures. The efficiency and the usefulness of the present approach are emphasized through some numerical calculations of the impedance matrix elements with associated CPU times.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.2
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• pp.235-241
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• 2001

A crack with electrically conducting surfaces in a linear electrostrictive ceramic subjected to uniform electric fields is analyzed. Complete forms of electric fields and elastic fields for the crack are derived by using the complex function theory. The linear electromechanical theory predicts overlapping of the traction free crack surfaces. It is shown that the surfaces of the crack are contact near the crack tip. The contact zone size obtained on the basis of the linear dielectric theory for the conducting crack does not depend on the electric fields and depends on only the original crack and the material property for the linear electrostrictive ceramic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.442-445
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• 2001

In this study, microstructural and dielectric properties of $Pb_{0.83}(La_{0.2}Ce_{0.8})_{0.08}TiO_3$(PCT) ceramics as a function of $MnO_2$ addition were investigated for 30MHz ceramic resonator application. Grain size was gradually increased according to the increase of $MnO_2$ addition amount and showed the highest value of $1.502{\mu}m$ at the 0.9wt% $MnO_2$. Moreover, density showed the highest value of $7.582 g/cm^3$ at the 0.7wt% $MnO_2$.All the composition ceramics,curie temperature was nearly constant around $330^{\circ}C$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.163-166
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• 1998

In this paper, breakdown strength and dielectric characteristics were experimented in the structures of insulation/insulation/insulation and insulation/semiconductor/insulation by using of insulation material of polyethylene terephthalate film. The breakdown strength and the permitivity of each specimen were measured as a function of temperature and frequency respectively. The breakdown strength of PET/PET/PET did not changed greatly but that of PET/SEMl/PEr increased as a function of temperature. As the frequency inclosed, the permitivity of PET/PET/PET and PET/SEMI/PET decreased. The tan $\delta$ of PET/PET/PET showed lower than that of PET/SEMl/PET in low frequency but higher in high frequency .

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.240-242
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• 1994

Spectroscopic ellipsometry(SE) was employed to characterize the Si/$Si_{1-x}Ge_x$ heterostructure. The dielectric function spectrum of $Si_{1-x}Ge_x$ at an arbitrary x value in the spectral range of $1.5{\sim}4.5\;eV$ was computed by EMA (effective medium approximation) model using the available optical constants measured at a number of fixed x values of Ge composition. The thickness and the Ge composition of $Si_{1-x}Ge_x$ measured by SE was compared with those measured by RBS. DC bias effect on the $E_2$ peak of dielectric function spectra was studied.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.227-232
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• 2023

In this study, complex admittance as a function of temperature and frequency was measured to analyze the important relaxation properties of lead scandium niobate, which is physically important, although it is not an environmentally friendly electrical and electronic material, including lead. Lead scandium niobate was synthesized by heat treating the solid oxide, and the conductance, susceptance and capacitance were measured as a function of temperature and frequency from the temperature dependence of the RLC circuit. The relaxation characteristics of lead scandium niobate were found to be affected by contributions such as grain size, grain boundary characteristics, space charge, and dipole arrangement. As the temperature rises, the maximum admittance and susceptance increase in one direction, but the resonance frequency decreases below the transition temperature but increases after the phase transition.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.217-222
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• 2007

Microwave dielectric properties of $(1-x)CaWO_4-xYNbO_4$ ceramics have been investigated as a function of $YNbO_4$ content($0.05{\leq}x{\leq}0.4$). A single phase with tetragonal scheelite structure was obtained up to x=0.10 and then the secondary phase with fergusonite structure was increased. With the increase of $YNbO_4$ content, apparent densities of the specimens were decreased. This results were due to the lower theoretical density of $YNbO_4(5.581g/cm^3)$ than that of $CaWO_4(6.117g/cm^3)$. Dielectric constant(K) and quality factor(Qf) were decreased with $YNbO_4$ content which could be attribute to the decrease of density and the increase of secondary phase. Temperature coefficient of resonant frequency (TCF) of the specimens with the $YNbO_4$ content was depended on dielectric mixing rule.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.698-702
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• 2005

Dielectric and Piezoelectric properties of complex perovskite 0.92Pb($Zr_{1/2}Ti_{1/2})O_{3}-(0.08-x)Pb(Cu_{1/3}Nb_{2/3})O_{3}-xPb(Mn_{1/3}Nb_{2/3})O_{3}(0{\leq}x{\leq}0.080$) (PZT-PCN-PMN) system were investigated as a function of PMN content. With the increase of PMN content of the sintered specimens, tetragonal phase was coexisted with rhombohedral phase, the dielectric constant was decreased, mechanical quality factor ($Q_{m}$) was inceased, and optimal sintering temperature was increased up to 1050$^{\circ}C$. For the composition of x = 0.064 sintered at 1050$^{\circ}C$ for 2 h, 1939 of maximum mechanical quality factor ($Q_{m}$), 57$\%$ of electromechanical coupling factor ($k_{p}$), and 1100$^{\circ}C$ of dielectric constant, 0.37$\% $ of dielectric loss (tan $\delta$) were obtained.