Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Characterization of $Si_{1-x}Ge_x$ alloy by Spectroscopic ellisometry

$Si_{1-x}Ge_x$ 박막의 Spectroscopic ellisometry 분석

  • Eo, Yoon-Pil (Department of Electrical Engineering, Seoul National University) ;
  • Hwang, Seok-Hee (Department of Electrical Engineering, Seoul National University) ;
  • Tae, Heung-Sik (Department of Electrical Engineering, Seoul National University) ;
  • Whang, Ki-Woong (Department of Electrical Engineering, Seoul National University)
  • Published : 1994.11.18
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Abstract

Spectroscopic ellipsometry(SE) was employed to characterize the Si/$Si_{1-x}Ge_x$ heterostructure. The dielectric function spectrum of $Si_{1-x}Ge_x$ at an arbitrary x value in the spectral range of $1.5{\sim}4.5\;eV$ was computed by EMA (effective medium approximation) model using the available optical constants measured at a number of fixed x values of Ge composition. The thickness and the Ge composition of $Si_{1-x}Ge_x$ measured by SE was compared with those measured by RBS. DC bias effect on the $E_2$ peak of dielectric function spectra was studied.

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