• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.713-717
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• 2004

In this study, the etched trench properties including cross-sectional profile, surface roughness, and crystalline defects were investigated depending on the various silicon etching and additive gases, For the case of HBr$He-O_2SiF_4$ trench etching gas mixtures, the excellent trench profile and minimum defects in the silicon trench were achieved. Due to the residual oxide film grown by the additive oxygen gas, which acts as a protective layer during trench etching, the undercut and defects generation in the trench were suppressed. To improve the electrical characteristics of trench gate, the hydrogen annealing process after trench etching was also adopted. Through the hydrogen annealing, the trench corners might be rounded by the silicon atomic migration at the trench corners having high potential. The rounded trench corner can afford to reduce the gate electric field and grow a uniform gate oxide. As a result, dielectric strength and TDDB characteristics of the hydrogen annealed trench gate oxide were remarkably increased compared to the non-hydrogen annealed one.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.641-646
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• 2004

We report the changes of the microwave reflection coefficients S$_{11}$ of copper(II)-phthalocyanine (CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand the phase transition of CuPc. For a NSMM system, a high-quality microstrip resonator coupled with a dielectric resonator was used. CuPc thin films were prepared on the pre-heated glass substrates using a thermal evaporation method. The reflection coefficients S$_{11}$ of CuPc thin films were changed by the dependence on the substrate pre-heating temperatures. By comparing reflection coefficient S$_{11}$ and crystal structures, we found the phase transition of CuPc thin films from $\alpha$-phase to $\beta$-phase at the substrate heating temperature 200 $^{\circ}C$./TEX>.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.293-295
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• 1994

Barium Titanate ($BaTiO_3$) is one of the few titanateds which is cubic at room temperature. It has the perovskite structure, high dielectric constant (${\varepsilon}_r=300$) and a small temperature coefficient of resistance due to it's Low transition temperature ($Tc=120^{\circ}c$). PTCR (Positive Temperature Coefficient of Resistivity) thermistor in thin film $BaTiO_3$ system was prepared by using radio frequency (13.56MHz) and BC magnetron sputter equipment. Polycrystalline, and surface structure characteristics of the specimens were measured by X-ray diffraction (D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M. JSM84 01, Japan), respectively. Temperature at below $600^{\circ}C$, $1000^{\circ}C$ to $700^{\circ}C$, and above $1100^{\circ}C$ for spotted $BaTiO_3$ thin films showed the amorphous, degree of crystal growth, and polycrystalline, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.177-178
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• 2007

본 연구에서는 MIM (Metal-Insulator-Metal) capacitor의 유전 물질로 사용되는 $Ba_xTi_yO_z$(BTO) 박막의 식각 특성을 고찰하였다. $Cl_2$/Ar 혼합가스를 이용하여 Inductively Coupled Plasma(ICP)에서 BTO 박막을 식각하였고, 식각된 BTO박막의 표면을 X-ray photoelectron spectroscopy(XPS) 분석하였다. BTO박막의 식각 속도는 Ar이 80%인 식각 조건에서 31.7nm/min의 식각 속도를 추출하였고, 동시에 Pt박막에 대한 높은 선택비를 얻었다. X-ray photoelectron spectroscopy (XPS) 분석 결과로부터 표면 반응을 조사하여, 식각 기구를 고찰하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1123-1125
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• 2005

본 논문에서는 3차원 공간에 종이와 같은 박막형 유전체가 있을 때 임의의 점에서의 전계$\vec{E}$를 구하기 위해 유전체의 분극벡터$\vec{P}$를 미지수로 하는 경계적분법(Boundary integral method)을 사용한다. 경계적분법의 사용으로 FEM 3차원 해석에 있어서의 요소분할의 난이성 및 계수 행렬의 대형화로 인한 컴퓨터 수행능력의 한계를 극복할 수 있다. 여기서 분극벡터$\vec{P}$를 구하기 위해 전하에서의 전계${ves{E}}_s$에 의한 유전체내의 분극벡터$\vec{P}$를 수식으로 정리하여 $[\vec{K}][\vec{P}]=[\vec{E}]$ 형태의 $\vec{P}$를 미지수로 하는 system matrix를 구성한다. 위의 system matrix 통해 구해진 분극벡터 $\vec{P}$를 이용하여 유전체 밖의 한 점에서의 전계세기 ${\vec{E}}_m$를 구한 후 우리가 구하고자 하는 전계$\vec{E}$를 계산한다.

• Transactions on Electrical and Electronic Materials
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• 제17권4호
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• pp.189-195
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• 2016

Micro Hotplate (MHP) is the key component in micro-sensors, particularly gas sensors. Indeed, in metal oxide gas sensors MOX, micro-heater is used as a hotplate in order to control the temperature of the sensing layer which should be in the requisite temperature range over the heater area, so as to detect the resistive changes as a function of varying concentration of different gases. Hence, their design is a very important aspect. In this paper, we have presented the design and simulation results of a meander micro heater based on three different materials - platinum, titanium and tungsten. The dielectric membrane size is 1.4 mm × 1.6 mm with a thickness of 1.4 μm. Above the membrane, a meander heating film was deposed with a thickness of 100 nm. In order to optimize the geometry, a comparative study by simulating two different heater thicknesses, then two inter track widths has also been presented. Power consumption and temperature distribution were determined in the micro heater´s structure over a supply voltage of 5, 6, and 7 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.718-721
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• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• 한국광학회지
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• 제13권5호
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• pp.396-399
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• 2002

전자선 증착기를 이용하여 1.3$\mu\textrm{m}$ 광모드 변환기가 집적된 반도체 레이저 출력 단면에 $SiO_2$와 $TiO_2$ 두 개의 박막 층으로 무반사 증착 하였다. 증착 단면의 최소 단면 반사율 $~ 10^{-5}$을 얻었고, $~ 10^{-4}$이하 단면 반사율 밴드 폭은 약 27nm임을 측정하였다. 이러한 코팅은 외부 공진기 레이저 광원 및 반도체 광 증폭기 등에 응용 가능하다.