Anti-reflection coating on the facet of a spot size converter integrated laser diode using a pair of TiO2 and SiO2 thin films |
송현우
(한국전자통신연구원 반도체원천기술연구소)
김성복 (한국전자통신연구원 반도체원천기술연구소) 심재식 (한국전자통신연구원 반도체원천기술연구소) 김제하 (한국전자통신연구원 반도체원천기술연구소) 오대곤 (한국전자통신연구원 반도체원천기술연구소) 남은수 (한국전자통신연구원 반도체원천기술연구소) |
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Characterization of butt-joint InGaAsP waveguides and their application to 1310 nm DBR-typeMQW gain-clamped semiconductor optical amplifiers
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Optical dispersion relations for amorphous semiconductors and amorphous dielectrics
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DOI ScienceOn |
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Spectroscopic ellipsometry of TiO₂layers prepared by ion-assisted electron-beam evaporation
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DOI ScienceOn |
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The structural properties of spot size converted laser diodes fabricated by butt-joint selective area growth
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직접 광 연결된 광섬유 격자 반도체 레이저
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Broadband multilayer antireflection coating for semiconductor laser facets
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DOI |