• 지질공학
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• 제15권1호
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• pp.29-39
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• 2005

지반오염을 조사하기 위해서는 시추작업을 통하여 시료를 채취하는 방법이 일반적이지만, 실시간으로 원위치에서 다양한 오염물질들의 오염 도 변화를 체계적으로 모니터링 하는 것은 대단히 어렵다. 본 연구에서는 frequency Domain Reflectometry (FDR) 장비를 고안하여 지반의 유류오염을 파악하기 위한 유전율 측정법의 실험적 접근을 시도하였다. 구체적으로 포화 및 불포화 매질에 대한 유류 오염도 측정 및 체적함수비 (θ/sub w/)와 체적 유류비 ( θ/sub al/)의 관계에서 유전율 상수 반응에 따른 매질의 유류 오염도 등의 측정 가능성을 실내 시험을 통해 검토하였다. 뿐만 아니라 실내 칼럼 시험을 수행하여 포화 매질 내에서 유류 거동 특성을 각기 설치된 FDR 측정 센서를 이용해 모니터링하여 포화 매질의 유효공극률과 유류 잔류비를 측정하였다. 그 결과 초기 공극률 0.40으로 제작된 포화 매질의 유효공극률은 약 0.35로 공극률 대비 약 87.5% 범위내에 존재함을 알 수 있었으며, 유류 잔류비는 약 62.5% 정도로 매우 높게 나타났다.

• 한국세라믹학회지
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• 제50권2호
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• pp.157-162
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• 2013

The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• 한국분말재료학회지
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• 제17권5호
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• pp.404-408
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• 2010

The effects of high energy ball-milling (HEBM) on the sintering behavior and piezoelectric properties of 0.1 wt% $Li_2CO_3$ doped 0.8Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.2Pb($Zr_{0.475}Ti_{0.525}$)$O_3$ (PMN-PZT) ceramics were investigated. It was found that HEBM treatment was quite effective to reduce the average particle size down to 300 nm, leading to increased density as well as enhanced piezoelectric properties of a sintered specimen even though prolonged HEBM resulted in unwanted secondary phases that caused a degradation of piezoelectric properties. The dielectric constant ($\varepsilon_r$), piezoelectric coupling factor ($k_p$) and piezoelectric constant $d_{33}$ of 0.1 wt% $Li_2CO_3$ doped PMN-PZT ceramics prepared via HEBM for 10 h reached 2040, 0.68 and 554 pC/N, respectively.

• 한국공작기계학회논문집
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• 제17권2호
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• pp.110-113
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• 2008

Embedded capacitor technology is one of the effective packing technologies for further miniaturization and higher performance of electric packaging system. In this paper, the embedded capacitors were simulated and fabricated in 8-layered printed circuit board employing standard PCB processes. The composites of barium titanante($BaTiO_3$) powder and epoxy resin were employed for the dielectric materials in embedded capacitors. Theoretical considerations regarding the embedded capacitors have been paid to understand the frequency dependent impedance behavior. Frequency dependent impedance of simulated and fabricated embedded capacitors was investigated. Fabricated embedded capacitors have lower self resonance frequency values than that of the simulated embedded capacitors due to the increased parasitic inductance values. Frequency dependent capacitances of fabricated embedded capacitors were well matched with those of simulated embedded capacitors from the 100MHz to 10GHz range. Quality factor of 20 was observed and simulated at 2GHz range in the 10 pF embedded capacitors. Temperature dependent capacitance of fabricated embedded capacitors was presented.

• Advances in materials Research
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• 제4권2호
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• pp.113-132
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• 2015

The phenomena of high-voltage polarization and conductivity in oriented vinylidenefluoride and tetrafluoroethylene copolymer films have been investigated. It was shown that under certain electric fields, injection of carriers from the material of electrodes appears The barrier for holes injection in the copolymer was found to be lower than that for electrons. It results in more effective screening of the external field near the anode than near cathode. Electrones, ejected from cathode, creating negative charge by trapping on the surface. It is shown that the electrons injected from cathodes create a negative homocharge on the copolymer surface and then become captured on the surface shallow traps. Their nature has been studied by the x-ray photoelectron spectroscopy. It was shown that these traps may consist of chemical defects in the form of new functional groups formed by reactions of surface macromolecules with sputtered atoms of aluminum. The asymmetric shape of hysteresis curves was explained by the difference in mobility of injected holes and electrons. These factors caused appearance of "non-closed" hysteresis curves for fluorine-containing polymer ferroelectrics. Hysteresis phenomena observed at low electric fields (below coercive ones) are to associate with the behavior of the domains localized in the ordered regions formed during secondary crystallization of copolymers.

• 한국세라믹학회지
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• 제42권2호
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• pp.132-139
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• 2005

마이크로파 유전체 세라믹스 $BaO-Nd_{2}O_3-TiO_{2}(BNT)$계 상용분말과 PbO-base의 결정화 유리프릿 복합체를 출발원료로 하여 테입 케스팅법으로 그린시트를 제초하기 위해 첨가유기물의 조성 변화에 따른 슬러리의 분산특성 및 유동특성 그리고 최종그린시트의 그린/소결밀도 변화를 연구하였다. 분산제량의 증가는 분산에 유효하였으나, 일정량 이상이 첨가되면 분산을 저해하는 요인으로 작용하였으며 복합체 분말에 1.75 wt$\%$의 fish oil을 첨가하였을 때 분산특성이 가장 우수하였다 준비된 모든 조성의 슬러리에서 의가소성거동(shear thinning)이 나타났고 파우더, 바인더 그리고 유기물의 전체 함량이 증가할수록 상대점도는 증가하는 경향을 나타내었다. 복합체 분말과 용매의 비율 65 : 35, 결합제는 6 wt$\%$, 가소제는 3 wt$\%$에서 테이프의 특성이 가장 우수하였다. 이때 슬러리의 점도는 677cps, 그린/소결밀도는 $3.3g/cm^3,\;5.56g/cm^3$로 각각 나타났다.

• 한국재료학회지
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• 제22권9호
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• pp.454-458
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• 2012

Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

• 한국전기전자재료학회논문지
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• 제37권4호
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• pp.457-463
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• 2024

(Bi_1/2Na_1/2)TiO₃(BNT) piezoelectric ceramics are one of the promising materials that can replace Pb(Zr, Ti)O₃(PZT) piezoelectric ceramics due to the high electromechanical strain properties. However, it is still difficult to use practical applications because the required electric field for inducing electromechanical strain is relatively higher than that of PZT ceramics. To overcome this problem, it has been intensively studied on doping impurity or modifying other ABO₃ for BNT-based piezoelectric ceramics. Therefore, this study investigated the effects of La₂O₃ doping on the phase transition behavior and electromechanical strain properties in BNT-SrTiO₃ (BNT-ST) lead-free piezoelectric ceramics. In the case of the temperature-dependent dielectric properties, it was confirmed that a phase transition from ferroelectrics to relaxors is induced with increasing La₂O₃ content. As a result, the electromechanical strain properties of BNT-ST ceramics were improved. The highest S_max/E_max value corresponding to 300 pm/V was obtained at 2 mol% La₂O₃-dopped BNT-ST ceramics. Accordingly, this study successfully demonstrated that La₂O₃ doping is effective on the inducing phase transition from ferroelectrics to relaxors and the improving electromechanical strain properties of BNT-ST lead-free piezoelectric ceramics.

• 한국재료학회지
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• 제20권11호
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.