• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.243-245
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• 1994

We synthesized the conducting diamond-like carbon films using plasma-enhanced chemical vapor deposition and analysized its characteristics. We obtained the metal-containing diamond-like carbon films using $CH_4$, Ar gas and aluminum target. We observed the changes of electrical conductivity, microhardness and surface morphology according to $Ar/CH_4$ ratio, substrate bias and target bias. As the target bias and $Ar/CH_4$ ratio increase and the substrate bias decreases, the electrical conductivity and surface roughness increase. The increase of hardness involves decrease of the electrical conductivity. Metal-containing amorphous hydrogenated carbon films show improved adhesion on metal substrates compared to pure diamond-like carbon films and better electrical conductivity.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.122-128
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• 2002

This study was conducted to synthesize the diamond like carbon films by plasma enhanced chemical vapor deposition (PECVD). The effects of gas composition on growth and mechanical properties of the films were investigated. A little amount of hydrogen or oxygen were added to base gas mixture of methane and argon. Methane dissociation and diamond like carbon nucleation were enhanced by installing negatively bias grid near substrate. The deposited films were indentified as hard diamond like carbon films by micro-Raman spectroscopy. The surface and fractured cross section of the films which were observed by scanning electron microscopy showed that film growth is very slow as about 0.3$\mu\textrm{m}$/hour, and relatively uniform with hydrogen addition. Vickers hardness of tungsten carbide (WC) cutting tool increased from about 1000 to 1600~1800 by deposition of DLC film, that of commercial TiN coated tool was about 1270. In cutting test of aluminum 6061 alloy, DLC coated cutting tool showed 1/3 or lower crater and flank wear than TiN coated or non-coated WC cutting tools.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.149-155
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• 2011

We investigated tribological characteristics of diamond-like carbon (DLC) in a condition with carbon nanotube (CNT) content of 1wt% in aqueous solution. Si-DLC films were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process on Al6061 aluminum alloy. In this study, the deposition of DLC films was carried out in vacuum with a chamber pressure of 10-5 to 10-3 Torr achieved by mechanical pump followed by turbo molecular pump. The surface adsorbed oxygen on the Aluminum substrates was removed by passing Ar gas for 10 minutes. The RF power was maintained at 500W throughout the experiment. A buffer layer of HMDSO was deposited on the substrate to improve the adhesion of DLC coating. At this point CH4 gas was introduced in the chamber using gas flow controller and DLC coating was deposited on the buffer layer along with HMDSO for 50 min. The thickness of 1 ${\mu}m$ was obtained for DLC films on aluminum substrates The tribological properties of as synthesized DLC films were analyzed by wear test in the presence of dry air, water and lubricant such as CNT ink.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.808-811
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• 2008

Optical and mechanical properties of diamond-like carbon (DLC) films synthesized by RF plasma enhanced chemical vapor deposition were investigated as a function the C/H ratio in gas mixture. The C/H ratio was varied from 6 to 10 %, adjusting the amount of $CH_4$ and $H_2$ as the source gas. The optical and mechanical properties of DLC films were characterized by UV spectrometer, Ellipsometer and Nano-indenter. The change of the C/H ratio during synthesis of DLC films had many effects on the growth rate, transmittance, refractive index and hardness. The growth rate of the films increased exponentially with the increase in C/H ratio. The hardness of the films showed the tendency to improve with increasing C/H ratio, whereas the transmittance decreased. The refractive index was varied from 2.03 to 2.17, and these refractive indexes close to 2.0 indicates that it can be applied to Si-based solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.973-976
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• 2008

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. We examined the effects of the RF power on the electrical properties of the DLC films. The films were deposited at several RF powers ranging from 50 to 175 W in steps of 25 W. The leakage current of DLC films increased at higher deposition RF power. And the resistivities of DLC films grown at 50 W and 175 W were $5\times10^{11}$ ${\Omega}cm$ and $2.68\times10^{10}$ ${\Omega}cm$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.49-53
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• 2011

Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.

• Journal of Industrial Technology
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• v.32 no.A
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• pp.119-123
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• 2012

Diamond-like carbon(DLC) thin films with interlayer were deposited on silicon substrate using a reactive sputtering method. The thermal stability of the films was investigated by annealing the films for 1hr in air in the range of 100 to $500^{\circ}C$. The $I_D/I_G$ ratio increased with increasing temperature as related to the $sp^3-to-sp^2$transition. Accordingly, G-position shifting started from $150^{\circ}C$ in the DLC films and from $270^{\circ}C$ in the a-Si/DLC films. Moreover, in the case of the a-Si/DLC films the film still observed even after annealing at $500^{\circ}C$. The thermal stability of the reactive sputtered DLC films appeared to be improved by the a-Si interlayer.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.10
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• pp.1037-1043
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• 1990

Diamond thin films were synthesized from the mixed gases of methane and hydrogen on silicon substrates by RF plasma chemical vapor deposition and deposited films were investigated by SEM, X-ray diffractometry and Raman spectroscopy. It is found that high quality diamond-like carbon films were successfully synthesized by PECVD under the deposition condition of 1-10 vol% of methane concentration, 0.15-0.4torr of reactor pressure, 500W of RF power, and 5-20hr of reaction time. Especially, cubo-octahedral diamond-like carbon particles were synthesized by employing 1.0 vol % of methane concentration and 0.4torr of the reactor pressure.

• Journal of the Korean institute of surface engineering
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• v.29 no.3
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• pp.149-156
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• 1996

Conducting diamond-like carbon films are synthesized using Triode Magnetron Sputtering-Plasma Enhanced Chemical Vapor Deposition(TMS-PECVD), and are examined by four point probe, microhardeness tester, and scanning electron miscroscopy(SEM). As the target bias and Ar/CH$_4$, ratio increase, the electrical resitivity and microhardness of the films are found to decrease, and also, their surface morphologies tend to be rough. While the resistivities of the films are shown to increase in proportion to the increase of the substrate bias, the microhardness of the films is shown to be maximun value(1600kg/$\textrm{mm}^2$) at a certain substrate bias(-70V). We can obtain the conducting diamond-like carbon films with the microhardness of 1600(kg/$\textrm{mm}^2$) and electrical resitivity of 16($\Omega$cm) at the process condition such as target bias -400V, substrate bias -70V, and Ar/$CH_4$ ratio 20.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.27-32
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• 2004

The diamond-like carbon (DLC) films were deposited on the Si (100) wafer by a rf-PECVD method as a function of the mixture rate of methane-hydrogen gas and bias voltage. The bonding structure and mechanical properties of these deposited DLC films were investigated using FT-IR, Raman, and nano-indenter. The deposition rates of DLC films increased with increased flow rate of methane in the gas mixtures and increased bias voltage. The $sp^3/sp^2$ bonding ratio of carbon in thin film and the hardness increased with increasing flow rate of hydrogen in the gas mixtures and increasing bias voltage.