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Bonding structure of the DLC films deposited by RE-PECVD  

최봉근 (CPRC, 한양대학교 세라믹공학과)
신재혁 (산업자원부 기술표준원 광전재료과)
안종일 (산업자원부 기술표준원 광전재료과)
심광보 (CPRC, 한양대학교 세라믹공학과)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.14, no.1, 2004 , pp. 27-32 More about this Journal
Abstract
The diamond-like carbon (DLC) films were deposited on the Si (100) wafer by a rf-PECVD method as a function of the mixture rate of methane-hydrogen gas and bias voltage. The bonding structure and mechanical properties of these deposited DLC films were investigated using FT-IR, Raman, and nano-indenter. The deposition rates of DLC films increased with increased flow rate of methane in the gas mixtures and increased bias voltage. The $sp^3/sp^2$ bonding ratio of carbon in thin film and the hardness increased with increasing flow rate of hydrogen in the gas mixtures and increasing bias voltage.
Keywords
Diamond like carbon; PE-CVD; Bonding structure; Hardness;
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Times Cited By KSCI : 1  (Citation Analysis)
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