• Title/Summary/Keyword: device structure

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Seismic performance evaluation of a steel slit damper for retrofit of structures on soft soil

  • Mahammad Seddiq Eskandari Nasab;Jinkoo Kim;Tae-Sang Ahn
    • Steel and Composite Structures
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    • v.51 no.1
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    • pp.93-101
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    • 2024
  • This paper presents an experimental and analytical study on a steel slit damper designed as an energy dissipative device for earthquake protection of structures considering soil-structure interaction. The steel slit damper is made of a steel plate with a number of slits cut out of it. The slit damper has an advantage as a seismic energy dissipation device in that the stiffness and the yield force of the damper can be easily controlled by changing the number and size of the vertical strips. Cyclic loading tests of the slit damper are carried out to verify its energy dissipation capability, and an analytical model is developed validated based on the test results. The seismic performance of a case study building is then assessed using nonlinear dynamic analysis with and without soil-structure interaction. The soil-structure system turns out to show larger seismic responses and thus seismic retrofit is required to satisfy a predefined performance limit state. The developed slit dampers are employed as a seismic energy dissipation device for retrofitting the case study structure taking into account the soil-structure interaction. The seismic performance evaluation of the model structure shows that the device works stably and dissipates significant amount of seismic energy during earthquake excitations, and is effective in lowering the seismic response of structures standing on soft soil.

Transmitted Force Estimation of Prototype HIF System Considering Flexibility of Mount System (지지부 동특성을 고려한 HIF 시스템의 충격력 예측)

  • Kim Hyo Jun;Choe Eui Jung
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.4
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    • pp.107-112
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    • 2005
  • In this study, the dynamic analysis is performed fur predicting the transmitted force to flexible human body induced by prototype HIF(High Impulsive force) device operation, which is partially assembled by major parts. A beam-mass model and a shear-structure model are used for the flexible mount structure and their dynamic behavior are investigated by experimental results under rigid/flexible mount conditions using a general purpose device. From the test result of prototype device in rigid mount condition, the transmitted force to human body which can not be measured directly, is estimated based on the proved mount structure model.

FPGA Inplementation of the Extended ATA Interface (확장된 ATA 인터페이스의 FPGA구현)

  • 구대성;김정태;이강현
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.1037-1040
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    • 1999
  • In this paper, we designed the extended ATA(AT Attachment interface with extension) interface that combines with goods price and ability and intellectual behavior of SCSI, for make progress the ability and structure of ordinary interface for connect with device of using PC. ATA is establish a standard of IDE(Intelligent Drive Electronics) public in small form factor. SCSI bus is device behaving intellectual and have stable hardware structure, calssified instructions structure. But it is device that difficult to buy, because of price of more than two times. The other side, ATA device is worse than SCSI bus in part of ability, but it came to SCSI in part of speed after improve and it's price is less expensive. another improvement of ATA is a standard of ARAP(AT Attachment Packet Interface) and use method of packet transmission and behaves as if SCSI use a method. Finally, improvement of ATAPI behave from interface of only HDD to ability of ordinary interface. This paper propose the structure of extended interface that satisfied the price and ability.

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Effect of Potential Well Structure on Ion Current in SCBF Device (SCBF 장치에서 이온전류에 대한 포텐셜 우물 구조의 영향)

  • Ju, Heung-Jin;Park, Jeong-Ho;Ko, Kwang-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.5
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    • pp.471-477
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    • 2007
  • SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.

Fabrication of a SOI Hall Device Using Si -wafer Dircet Bonding Technology (실리콘기판 직접접합기술을 이용한 SOI 흘 소자의 제작)

  • 정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.86-89
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    • 1994
  • This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

A Study on electrical characteristics of New type bulk LDMOS (새로운 Bulk type LDMOSFET의 전기적 특성에 대한 연구)

  • Chung, Doo-Yun;Kim, Jong-Jun;Lee, Jong-Ho;Park, Chun-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.170-173
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    • 2003
  • In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

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Process-Structure-Property Relationship and its Impact on Microelectronics Device Reliability and Failure Mechanism

  • Tung, Chih-Hang
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.3
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    • pp.107-113
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    • 2003
  • Microelectronics device performance and its reliability are directly related to and controlled by its constituent materials and their microstructure. Specific processes used to form and shape the materials microstructure need to be controlled in order to achieve the ultimate device performance. Examples of front-end and back-end ULSI processes, packaging process, and novel optical storage materials are given to illustrate such process-structure-property-reliability relationship. As more novel materials are introduced to meet the new requirements for device shrinkage, such under-standing is indispensable for future generation process development and reliability assessment.

Improved Performance of White Phosphorescent Organic Light-Emitting Diodes through a Mixed-Host Structure

  • Lee, Jong-Hee;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
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    • v.31 no.6
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    • pp.642-646
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    • 2009
  • Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

Effect of the limiting-device type on the dynamic responses of sliding isolation in a CRLSS

  • Cheng, Xuansheng;Jing, Wei;Li, Xinlei;Lu, Changde
    • Earthquakes and Structures
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    • v.15 no.2
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    • pp.133-144
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    • 2018
  • To study the effectiveness of sliding isolation in a CRLSS (concrete rectangular liquid-storage structure) and develop a reasonable limiting-device method, dynamic responses of non-isolation, sliding isolation with spring limiting-devices and sliding isolation with steel bar limiting-devices are comparatively studied by shaking table test. The seismic response reduction advantage of sliding isolation for concrete liquid-storage structures is discussed, and the effect of the limiting-device type on system dynamic responses is analyzed. The results show that the dynamic responses of sliding isolation CRLSS with steel bar-limiting devices are significantly smaller than that of sliding isolation CRLSS with spring-limiting devices. The structure acceleration and liquid sloshing wave height are greatly influenced by spring-limiting devices. The acceleration of the structure in this case is close to or greater than that of a non-isolated structure. Liquid sloshing shows stronger nonlinear characteristics. On the other hand, sliding isolation with steel bar-limiting devices has a good control effect on the structural dynamic response and the liquid sloshing height simultaneously. Thus, a limiting device is an important factor affecting the seismic response reduction effect of sliding isolation. To take full advantage of sliding isolation in a concrete liquid-storage structure, a reasonable design of the limiting device is particularly important.

Effect of Mesh Screen Device on Over-Expanded Supersonic Jet Noise (메쉬 스크린 장치가 과팽창 초음속 제트소음에 미치는 영향)

  • Kweon, Yong-Hun;Kim, Jae-Hyung;Lim, Chae-Min;Aoki, Toshiyuki;Kim, Heuy-Dong
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.3150-3155
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    • 2007
  • This paper describes an experimental work to investigate the effect of mesh screen device on the jet structure and acoustic characteristics of over-expanded supersonic jet. The mesh screen device is placed into the supersonic jet stream. In order to perturb mainly the initial jet shear layer, the hole is perforated in the central part of the mesh screen. The diameter of the perforated hole and the location of mesh screen device are varied. A Schlieren optical system is used to visualize the flow fields of supersonic jet without and with the mesh screen device. Pitot pressure measurement is carried out to obtain the pressure distribution in the jet flow. Acoustic measurement also is performed to obtain the OASPL and noise spectra. The results obtained show that the jet structure and the jet noise control effectiveness is strongly dependent upon the diameter of the perforated hole and the location of the mesh screen device in the jet stream. Provided that the mesh screen device is placed at the location to perturb effectively the initial shear layer, the present control method is effective in suppressing the supersonic jet noise.

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