• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• Journal of the Korean Operations Research and Management Science Society
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• v.21 no.2
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• pp.17-33
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• 1996

Automatic transfer defined as an integrated system with a number of workstations, interstation storage buffers, automatic device and a control system, play a major role in ass production systems. Due to high capital investment needed for an automatic transferline, greater care should be taken in its design so as to maximize the system performance. One may to control the system performance is to control buffer storage. To control the interstation work-in-process inventory, we propose dual limit switches which control the buffer storage with two parameters, R and r. Under the policy, proceding station is forced down when the inventory level in the buffer reaches R until the level falls to r. For the model developed, we analyze the system characteristics and find the optimal control parameters with a serach procedure.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.568-573
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• 1996

In this paper, A design strategy of the Surface Mounting Device for accurate and better performance is studied. Analytical Modeling. Sensitivity analysis and optimization are being conducted. The ANSYS software and experimental method are used for verification of the analytical equations withboundary conditons. Through the sensitivity analysis, the most dominant design parameters can be detected. The optimum design parameters for performing given performing given perfomances are selected by using the optimization algorithm. The design tool based on the design strategy for the analysis, modeling and optimization will be useful for a re-design and better perofrmance of the SMD.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.145-146
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• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

• Journal of the Korean Society of Propulsion Engineers
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• v.18 no.3
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• pp.78-83
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• 2014

A special part such as a flow passage opening device is required to prevent the disconnection of fuel transfer in a pressurized fuel tank. To meet this requirement, the device utilizing an acceleration follow-up technique was invented. RecurDyn, a dynamic analysis tool, is introduced in this article to predict the device's performance and to determine parameters affecting it. In the analysis, it is shown that balancing weights can open the passage in accordance with fuel position.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.6
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• pp.469-475
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• 2014

The roll to roll (RTR) imprint process is an integrated imprinting process where steps ranging from assignment of a function to a flexible rolled substrate to rewinding of the same substrate in a roll are performed. RTR imprint is a green, low-cost technology without limitations. In RTR imprint, it is important to manufacture the mold precisely and maintain uniform process condition. To this, process conditions have to include precision tension control, optimization of process parameters. We introduced RTR imprint to fabricate planar lightwave circuit (PLC) device for communication, by new schematic design and process optimization, we fabricated successfully optical device. The fabricated optical device showed the optical performance which was satisfied to meet international standard.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Explosives and Blasting
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• v.36 no.1
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• pp.1-11
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• 2018

In this study, several underwater steel cutting tests and AUTODYN numerical analyses were conducted to evaluate the penetration performance of a shaped charge device. Parameter analyses for the contribution rate were conducted by using the robust design method. The parameters adopted in this study were chamber type, stand-off, and wire setting, each of which had three levels in the analysis. Analysis results showed that the contribution rate was most affected by the stand-off, followed by the chamber type and wire setting. Experiments of underwater steel cutting were conducted at water depth of 25m. As expected, the experiments and numerical simulation showed similar results for underwater steel cutting performance, and thus the feasibility of the shaped charge device for underwater steel cutting at deep water depth was verified.

• International Journal of Control, Automation, and Systems
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• v.5 no.5
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• pp.515-525
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• 2007

In this paper, we develop a co-design methodology of stochastic optimal controllers and network parameters that optimizes the overall quality of control (QoC) in networked control systems (NCSs). A new dynamic model for NCSs is provided. The relationship between the system stability and performance and the sampling frequency is investigated, and the analysis of co-design of control and network parameters is presented to determine the working range of the sampling frequency in an NCS. This optimal sampling frequency range is derived based on the system dynamics and the network characteristics such as data rate, time-delay upper bound, data-packet size, and device processing time. With the optimal sampling frequency, stochastic optimal controllers are designed to improve the overall QoC in an NCS. This co-design methodology is a useful rule of thumb to choose the network and control parameters for NCS implementation. The feasibility and effectiveness of this co-design methodology is verified experimentally by our NCS test bed, a ball magnetic-levitation (maglev) system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.105-106
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• 2005

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process has been widely used in microelectronics and semiconductor processes. Indium tin oxide (ITO) thin film was polished by CMP by the change of process parameters for the improvement of CMP performance. Removal rate and planarity were improved after CMP process at the optimized process parameters compared to that before CMP process.