• JSTS:Journal of Semiconductor Technology and Science
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• 제1권2호
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• pp.103-110
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• 2001

Gate oxide scaling for sub-l00nm CMOS devices has been studied. Issues on the gate oxide scaling are reviewed, which are boron penetration, reliability, and direct tunneling leakage currents. Reliability of Sub-2.0nm oxides and the device performance degradation due to boron penetration are investigated. Especially, the effect of gate leakage currents on the transistor characteristics is studied. As a result, it is proposed that thinner oxides than previous expectations may be usable as scaling proceeds. Based on the gate oxide thickness optimization process we have established, high performance CMOS transistors of $L_{gate}=70nm$ and $T_{ox}=1.4nm$ were fabricated, which showed excellent current drives of $860\mu\textrm{A}/\mu\textrm{m}$ (NMOS) and $350\mu\textrm{A}/\mu\textrm{m}$ (PMOS) at $I_{off}=10\mu\textrm{A}/\mu\textrm{m}$ and $V_dd=1.2V$, and CV/I of 1.60ps (NMOS) and 3.32ps(PMOS).

• 한국세라믹학회지
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• 제40권4호
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• pp.385-392
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• 2003

Sol-gel preparation technique using a chemical reaction of metal alkoxides has been widely used for the fabrication of various materials including ceramics. However, its mechanism has been studied till now because a number of chemical ways are possible from various alkoxides and additives. In this study, the mechanism of hydrolysis, condensation, and polymerization of alkoxides were investigated from the fabrication of lead-zirconate-titanate (PbZr$\_$x/Ti$\_$l-x/O$_3$; PZT) thin film that is used as various micro-actuator, transducer, and sensor because of its high electro-mechanical coupling factors and thermal stability. Furthermore, the fabrication process and characteristics of self-patternable PZT film using photosensitive stabilizer were studied in order to resolve the problem of physical damage and properties degradation during dry etching for device fabrication. Using an optimum condition to prepare the self-patternable PZT film, more than 5000 ${\AA}$ thick self-patternable PZT film could be fabricated by three times coating. The PZT film showed 28.4 ${\mu}$c/cm$^2$ of remnant polarization (Pr) and 37.0 kV/cm of coercive field (E$\_$c/).

• 에너지공학
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• 제15권1호
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• pp.23-27
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• 2006

가정용 LPG(Liquefied petroleum gas)저압조정기의 성능 및 수명평가를 위하여, 저압조정기의 사용경과에 대한 안전장치의 성능, 조정압력 및 폐쇄압력, 조정 스프링 및 다이어프램의 기계적 물성을 분석하였다. 실험결과, 사용시간의 경과에 따른 조정성능 및 물성저하가 관찰되었으며, 사용기간 6년 이상의 조정기는 성능 저하가 매우 심각한 것으로 분석되었다.

• 한국신뢰성학회지:신뢰성응용연구
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• 제18권1호
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• pp.56-65
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• 2018

Purpose: The purpose of this study is to estimate shelf life of fuze MTSQ (Mechanical Time & Super Quick) KM577A1 from Ammunition Stockpile Reliability Program (ASRP) data. Methods: For many years, ammunition test data had been gathered from ASRP. In this study, lot selection criteria and reliability score of functioning time for fuze are proposed. Reliability score of functioning time and failure data are used to estimate shelf life. Results: The results of this study are as follows; The failure modes of fuze MTSQ KM577A1 are dud, inverse function and mechanical time functioning failure (not operating in intended time). Dud and inverse function are major failure modes. Fuze MTSQ KM577A1's shelf life ($B_5$) is estimated 18.2 years conservatively. Conclusion: Degradation of chemical components in fuze MTSQ KM577A1 is major factor for its reliability. And shelf life ($B_5$) of fuze MTSQ KM577A1 is estimated 18.2 years conservatively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.366-367
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• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2008년도 학술발표회 논문집
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• pp.2122-2126
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• 2008

With the degradation of water quality and, at the same time increased water usage, the sources of high quality, for examples, river/stream, municipal reservoir, wells, artisan and surface water, are diminishing. Therefore, the importance of water quality has been emphasized over the years through publications and various literature sources. Even though considerable research has resulted in significant strides for providing interpretive information and mitigation strategies for improvement of waters, the quality of which is still questionable. This study aims to propose a completely independent self-contained system for purifying waters, solar-powered ozone generator. It is a semi-permanent and cost effective environmental solution. Functions of ozone treatment are: 1) to maintain oxidative flexibility, 2) remove harmful chemicals, wastes, and other substances, and 3) prevent epizootic microbial outbreaks. Recent advances in technology have allowed the development of the practical, self-contained and independent solar powered device. Solar electrical producing panels that charge batteries are the key to using these systems anywhere electrical power is not available. This paper invites the readers to examine the problem and consider the viable, proven solution the solar powered ozone purifying system. This paper also introduces basic concept and background of solar powered ozone generators and examine its feasibility for improving water quality in rivers and streams.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.46-52
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• 2012

Separate extraction of source ($R_S$) and drain ($R_D$) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of $R_S$ and $R_D$ in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of $R_S$ and $R_D$. We also confirmed that there is a negligible drift in the threshold voltage ($V_T$) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.

• Journal of information and communication convergence engineering
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• 제15권2호
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• pp.112-116
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• 2017

In this work, we demonstrated a low noise and high linearity low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with novel active bias circuit for LTE applications. The device technology used in this work relies on a process involving a $0.25-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT). The LNA MMIC with a novel active bias circuit has a small signal gain of $19.7{\pm}1.5dB$ and output third order intercept point (OIP3) of 38-39 dBm in the frequency range 1.75-2.65 GHz. The noise figure (NF) is less than 0.58 dB over the full bandwidth. Compared with the characteristics of the LNA MMIC without using the novel active bias circuit, the OIP3 is improved about 2-3 dBm. The small signal gain and NF showed no significant change after using the active bias circuit. The novel active bias circuit indeed improves the linearity performance of the LNA MMIC without degradation.

• Journal of Information Display
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• 제1권1호
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• pp.63-69
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• 2000

In order to improve both the level and the stability of electron emission, Mo and Co silicides were formed from Mo mono-layer and Ti/Co bi-layers on single crystal silicon field emitter arrays (FEAs), respectively. Using the slope of Fowler-Nordheim curve and tip radius measured from scanning electron microscopy (SEM), the effective work function of Mo and Co silicide FEAs were calculated to be 3.13 eV and 2.56 eV, respectively. Compared with silicon field emitters, Mo and Co silicide exhibited 10 and 34 times higher maximum emission current, 10 V and 46 V higher device failure voltage, and 6.1 and 4.8 times lower current fluctuation, respectively. Moreover, the emission currents of the silicide FEAs depending on vacuum level were almost the same in the range of $10^{-9}{\sim}10^{-6}$ torr. This result shows that silicide is robust in terms of anode current degradation due to the absorption of air molecules.