한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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- Pages.366-367
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- 2006
WCMP에서 발생되는 W plug내 slurry particle제거에 관한 연구
The study on removal of slurry particles on W plug generated during tungsten CMP
- Yang, Chan-Ki (Samsung Electronics) ;
- Kwon, Tae-Young (Hanyang University) ;
- Hong, Yi-Koan (Hanyang University) ;
- Kang, Young-Jae (Hanyang University) ;
- Park, Jin-Goo (Hanyang University)
- 발행 : 2006.11.09
초록
In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when