• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.519-526
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• 2024

This review examines the use of halide perovskite materials in electronic devices, highlighting their exceptional optoelectronic properties and the challenges associated with them. Despite their potential for high-performance devices, practical applications are limited by sensitivity to environmental factors such as moisture and oxygen, etc. We discuss advances in enhancing stability and operational reliability, featuring innovative synthesis methods and device engineering strategies that help mitigate degradation. Furthermore, we explore the integration of perovskites in applications such as field-effect transistors and LEDs, emphasizing their transformative potential. This review also outlines future research directions, stressing the need for ongoing improvements in material stability and device integration to fully realize the commercial potential of perovskites.

• Proceedings of the KIEE Conference
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• 1979.08a
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• pp.160-161
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• 1979

The degradation of image due to the finite size of sensing device has been one of the problems to all of the digital imaging systems. The improvement of the spatial resolution has been attempted by "differential method" with fixed sensor size and finer sampling. The computer simulations were carried out for the cases of PLF system (Parallel Linear Fan-beam) and SR(Stationary Ring) system and the results are presented.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.21-30
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• 2012

Technology trend and application of laser fuse, anti-fuse, and eFUSE as well as the structure, programming mechanism, and reliability of eFUSE have been reviewed. In order to ensure eFUSE reliability in the field, a sensing circuit trip point consistent with the fuse resistance distribution, process variation, and device degradation in the circuit such as hot carrier or NBTI, as well as fuse resistance reliability must be considered to optimize and define a reliable fuse programming window.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.365-368
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• 2002

WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NMI ion implantation and deposition & etch nitride layer New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.4
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• pp.26-32
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• 1978

For a long life photovoltaic cell the degradation of the device characteristics with 1 MeV electron radiation must be known so as to be able to predict the life of the cell. Hence, a study was made of radiation damage effects on the bulk properties of the silicon crystal. From the results of the data, it is concluded that there appeared to be a steads rotate damage level reached in f type material.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.515-518
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• 2002

In this paper, we demonstrate the impact of oxide interface-state on low temperature poly-Si TFTs. The TFTs with interface-state exhibit poor performance and serious degradation under hot carrier and gate bias stress. Our results indicate that the worse oxide integrity cause initial characteristic shift and device instability.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.67-68
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• 2000

Polycrystalline silicon (poly-Si) thin film transistors (TFT's) employing vertical amorphous silicon (a-Si) offsets have been fabricated without additional photolithography processes. The a-Si offset has been formed utilizing the poly-Si grain growth blocking effect by thin native oxide film during the excimer laser recrystallization of a-Si. The ON current degradation of the new device after 4 hour's electrical stress was reduced by 5 times compared with conventional poly-Si TFT's.

• Proceedings of the Optical Society of Korea Conference
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• 1995.06a
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• pp.210-215
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• 1995

Technology development toward the use of LiNbO3-based acoustic tunable filters as WDM 2$\times$2 cross-connect switches is reviewed. Recenly, it was found that a fundamental behavior of multi-wavelength Bragg scattering critically affects the crosstalk performance of the acousto-optic tunable filter. We revuew serveral reported methods of overcoming the performance degradation. We will eventually ask whether the device is up to task of WDM optical switching.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.126-131
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• 2007

The durability problem of Prussian blue in non-aqueous $Li_+$-based electrolytes has been due to the degradation of the Prussian blue electrode matrix during the insertion/extraction processes by $Li_+$. In this work, we designed and synthesised the Prussian blue without reducing the electrochromic performance in non-aqueous $Li_+$-based electrolytes. Prussian blue was electrodeposited on a glass which has ITO coating, and the coating solution is a mixture solution of $FeCl_3\;and\;K_3Fe(CN)_6$ with deionized water added HCl, KCl, and LiCl, respectively. The durability of Prussian blue was evaluated by an in-situ transmittance measurement during a continuous and pulse potential cycling test, and measured by electroactive layer thickness due to evaluating the degradation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.