• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.110-113
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• 2002

Organic EL has been expected to adopt to a new styles of technology that make flat display after Tang & Vanslyke made good electric luminescence device in late 1980s. Their studies based on multi layer structure that consists of emitting layer and carrier transporting layer using proper organic material. In this study. we made multi layer device using $Eu(TTA)_3(phen)$ as a luminescence material by PVD and investigate luminous properties of each device. But oxidization of organic layer by ITO. energy walls in both pole interface. contaminations of ITO surface, importance of protecting membrane, diffusive dimming of light to cathode organic layer. these causes of degradations are common facts of a macromolecule and micromolecule. We think these degradation caused by the impact of heat and electro-chemical factor, bulk effect and interface phenomenon. and raise a question.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.192-199
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• 2014

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.727-736
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• 1995

This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10$\^$6/ write/erase cycles, that the devices are degraded due to the increase of the silicon-tunneling oxide interface traps. The 10-year retention is impossible for the device with a nitride less than 129.angs.. However, the MONOS memory device with 10-year retentivity has been obtained by increasing the blocking oxide thickness to 47.angs.. Also, the memory traps such as the nitride bulk trap and the blocking oxide-nitride interface trap have been investigated by measuring the maximum flatband voltage shift and analyzing through the best fitting method.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• Corrosion Science and Technology
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• v.6 no.5
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• pp.261-268
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• 2007

Embedded sensors were used as an in-situcorrosion-sensing device for aircraft and vehicular structures protected by organic coatings. Results are presented changes associated with a standard Airforce aircraft coating and a standard Army vehicle coating were monitored by embedded sensors. These coatings consisted of a polyurethane topcoat and an epoxy primer, however are formulated to provide different characteristics. The ac-dc-ac testing method was used to accelerate the degradation of these coatings while being immersed in a NaCl medium. Electrochemical impedance spectroscopy and electrochemical noise measurement experiments were used to monitor the induced changes. A comparison of the results between coatings subjected to the ac-dc-ac exposure and coatings subjected to only constant immersion in the NaCl medium is presented. The results were used to demonstrate the effectiveness of the ac-dc-ac method at accelerating the degradation of an organic coating without observably changing the normal mechanism of degradation. The data highlights the different features of the coating systems and tracks them while the coating is being degraded. The aircraft coating was characterized by a high-resistant topcoat that can mask corrosion/primer degradation at the primer/substrate interface whereas the vehicle coating was characterized by a low-resistant topcoat with an effective corrosion inhibiting primer. Details of the ac-dc-ac degradation were evaluated by using an equivalent circuit to help interpret the electrochemical impedance data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.88-92
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• 2020

Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO₂ and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.526-534
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• 2014

In this paper, for the WiMedia Distributed Medium Access Control (D-MAC) protocol based on UWB. performance degradation due to the Distributed Reservation Protocol (DRP) conflict problem caused by devices' mobility is analyzed. And a DRP relay protocol and a DRP conflict resolution (CR) are proposed to overcome the performance degradation at DRP conflicts. In order to give the loser device at DRP conflicts a chance to maintain resources, the proposed DRP relay protocol executed at each device helps the loser device reserve an indirect link maintaining the required resources via a relay node. Simulation results considering the mobile environment have indicated that the DRP relay combined with the CR prevent the throughput decrease even though mobility of devices increases.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.405-410
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• 2017

In order to study current-voltage-luminance and impedance characteristics according to elapsed time, a blue fluorescent OLED was fabricated. The current density and luminance gradually decreased in accordance with elapsed time and did not emit light after 480 hours, and the threshold voltage increased as time elapsed. The Cole-Cole plot was a semicircular shape of a very large size at 2 V of the applied voltage below the threshold voltage, and the maximum value of the real number impedance did not change greatly from 9314.5 to $9902.2{\Omega}$ as time elapsed. Applied voltages 4, 6, and 8 V above the threshold voltage showed a large change in the real number impedance value at the semicircle end to 9,678.2, 9,826, $9,535.4{\Omega}$ according to the elapsed time from 2,222.5, 183.7, $48.2{\Omega}$ immediately after fabricating the device. By increasing the applied voltage beyond the threshold voltage just after device fabrication, the energy difference between the device and the organic layer was overcome and the current flowed, the maximum value of the real number impedance sharply decreased. As time passed, current did not flow through the element even at high applied voltage due to degradation of the element, and even when the applied voltage was higher than the threshold voltage, it showed an impedance value such as applied voltage equal to or less than the threshold voltage. As a result, it can be learned that the change in the impedance with elapsed time reflects the characteristics due to the degradation of the OLED and can predict the characteristics and lifetime of the OLED.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.4
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• pp.325-330
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• 2004

Several kinds of low voltage cables have been used in nuclear power plants for the supply of electric power, supervision, and the propagation of control signals. These low voltage tables must be inspected for safe and stable operation of nuclear power plants. In particular, the degradation diagnosis to estimate the integrity of low voltage rabies has recently been emphasized according to the long use of nuclear power plants. In order to evaluate their degradation, the surrounding temperature, hardness of insulation material, elongation at breaking point (EAB), etc. have been used. However, the measurement of temperature or hardness is not useful because of the absence of quantitative criteria; the inspection of a sample requires turning off of the power plant power; and, the electrical inspection method is not sufficiently sensitive from the initial through the middle stage of degradation. In this research, based on the theory that the ultrasonic velocity changes with relation to the degradation of the material, we measured the ultrasonic velocity as low voltage cables were degraded. To this end, an ultrasonic degradation diagnosis device was developed and used to measure the ultrasonic velocity with the clothing on the cable, and it was confirmed that the ultrasonic velocity changes according to the degradation of low voltage cables. The low voltage cables used in nuclear power plants were degraded at an accelerated rate, and EAB was measured in a tensile test conducted after the measurement of ultrasonic velocity. With the increasing degradation degree, the ultrasonic velocity decreased, whose potential as a useful parameter for the quantitative degradation evaluation was thus confirmed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.12
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• pp.729-738
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• 2014

In this paper, we propose interference avoidance resource allocation scheme based on graph-coloring algorithm to introduce performance gain using spatial reuse in D2D (Device-to-Device) system. By assigning multiple D2D pairs to a single D2D resource, interference from neighboring D2D pairs is inevitable, which leads to performance degradation. Therefore, we first introduce the feedback information and the method considering the amount of information that can be practically provided by a D2D pair. Then, we propose how to construct a graph, which is corresponding to the D2D system, using the feedback information and adopt a graph-coloring algorithm to efficiently avoid interference. Simulation results show that the proposed resource allocation scheme outperforms traditional resource allocation schemes in both overall sum rate and spectral efficiency of D2D system while reducing the outage probability. Moreover, the outage probability, which indicates a failure rate of D2D communication, can be reduced by adopting the proposed scheme.