• 제목/요약/키워드: device

검색결과 29,855건 처리시간 0.051초

PBTI에 의한 무접합 및 반전모드 다중게이트 MOSFET의 소자 특성 저하 비교 분석 (Comparative Analysis of PBTI Induced Device Degradation in Junctionless and Inversion Mode Multiple-Gate MOSFET)

  • 김진수;홍진우;김혜미;이재기;박종태
    • 한국정보통신학회논문지
    • /
    • 제17권1호
    • /
    • pp.151-157
    • /
    • 2013
  • 본 연구에서는 다중게이트 구조인 나노 와이어 n-채널 무접합(junctionless)와 반전모드(inversion mode) 다중게이트 MOSFET(Multiple-Gate MOSFET : MuGFET)의 PBTI에 의한 소자 특성 저하를 비교 분석하였다. PBTI에 의해서 무접합 및 반전모드 소자의 문턱전압이 증가하는 것으로 관측되었으며 무접합 소자의 문턱전압 변화가 반전모드 소자보다 작음을 알 수 있었다. 그러나 소자특성 저하 비율은 반전모드 소자가 무접합 소자보다 큰 것으로 관측되었다. 특성저하 활성화 에너지는 반전모드 소자가 무접합 소자보다 큰 것을 알 수 있었다. PBTI에 의한 소자 특성 저하가 무접합 소자보다 반전모드 소자가 더 심한 것을 분석하기 위하여 3차원 소자 시뮬레이션을 수행하였다. 같은 게이트 전압에서 전자의 농도는 같으나 수직방향의 전계는 반전모드 소자가 무접합 소자보다 큰 것을 알 수 있었다.

약물방출스텐트의 약물 방출 특성 평가 방법 개발 (Development of Evaluation Method for Drug Release Propreties in Drug Eluting Stent)

  • 송정민;백홍;이승영;장동혁;서무엽;박길종;맹은호
    • 대한의용생체공학회:의공학회지
    • /
    • 제34권2호
    • /
    • pp.69-72
    • /
    • 2013
  • The goal of this study is to develop test method for evaluating the drug eluting properties of drug eluting stents (DES). PBS and the detergent solutions, presented by each DES manufacturer, were used for drug release of DES coated with paclitaxel, zotarolimus and everolimus. The drugs which are coating DES were not released by PBS but released by the detergent solutions, finally paclitaxel 83.38%, zotarolimus 103.85% and everolimus 115.78%. It seems that the use of the detergents is necessary in order to release the drugs because those drugs are extremely hydrophobic. In conclusion, using of detergent solutions presented by each manufacturer were suitable for evaluating the drug eluting property of drug eluting stent.

일회용 의료기기에 적용을 위한 ISO 14971:2019 분석과 Periodic Safety Update Report 작성 방법 - Medical Device Regulation 2017/745 요구사항 중심으로 (ISO14971:2019 Detailed Analysis and Periodic Safety Update Report Establishment Method for the Single Use Medical Device - Focusing on Medical Device Regulation 2017/745 requirements)

  • 박상민;류규하
    • 대한의용생체공학회:의공학회지
    • /
    • 제44권1호
    • /
    • pp.1-10
    • /
    • 2023
  • With the announcement of MEDICAL DEVICE REGULATION 2017/745 (MDR) on April 5 2017, medical device manufacturers shall apply ISO 14971:2019 (3rd) revised in December 2019. However, there is not much related information and guidance available to medical device manufacturers, especially single use medical device. Risk management process basically follow 5 steps which are Risk Analysis, Risk Evaluation, Risk Control, Evaluation of overall residual risk and post-production activities. The purpose of this study is to provide a guidance of from risk analysis with Failure Mode and Effects Analysis (FMEA) table to overall residual risk evaluation for the single use medical device and to reflect it in a Periodic Safety Update Reports (PSUR) to satisfy with MDR requirements with single use medical device which are widely used and manufactured FDA class 2 or CE class IIb as examples. For this study, single use medical device manufacturer can adopt ISO 14971:2019 in accordance with MDR requirements and it can be extended to the PSUR. But there are still limitations to adopt to the all-single use medical device especially high class, private device and implantable device. So, Competent Authority (CA) shall publish more guidance for the single use medical device.

의료기기산업의 수출경쟁력 분석 및 강화방안 -강원지역 의료기기산업을 중심으로- (The Analysis and Strengthening Method of Export Competitive Power of Medical Device Industry - With Respect to Medical Device Industry in Gangwon Area)

  • 이강빈
    • 무역상무연구
    • /
    • 제45권
    • /
    • pp.191-238
    • /
    • 2010
  • The purpose of this paper is to make research on the trend of the worldwide medical device market, the trend of the medical device market in the major foreign countries, the present status of the medical device industry in Korea and Gangwon area, the present status of export competitive power and the SWOT analysis of competitive power of the medical device industry in Gangwon area, and the strengthening methods of export competitive power of the medical device industry in Gangwon area. As the research method, the questionaire for the strengthening of export competitive power of the medical device industry in Gangwon area was carried out from August 13 to Otober 22, 2009. The worldwide medical device market in 2008 is estimated at USD 210.2 billion, with the United States being the largest market, followed closely by Japan and Western Europe. In 2006, the worldwide export amount of medical devices recorded USD 121.1 billion and the worldwide import amount of medical devices recorded USD 126.3 billion. As of the end of 2008, the number of Korea's medical device manufacturers expanded to 1,726. The production amount of Korea's medical device industry in 2008 recorded 2,525 billion won, and the domestic market volume of medical devices in 2008 recorded 3,618 billion won. Korea's export amount of medical devices in 2008 recorded USD 1,132 million and recorded a 9.67% growth compared to the previous year, and the import amount of medical devices recorded USD 2,123 million and recorded a 1.43% reduction compared to the previous year. As of the end of 2008, the number of Gangwon area's medical device manufacturers expanded to 81. The production amount of Gangwon area's medical industry in 2008 recorded 380 billion won, and Gangwon area's export amount of medical devices recorded USD 269 million and recorded a 0.25% reduction compared to the previous year, and the import amount of medical devices recorded USD 3 million and recorded a 39.63% reduction compared to the previous year. According to the result analysis of the questionaire for the strengthening of export competitive power of medical device industry in Gangwon area(August 13~October 22, 2009), the competing country of the export medical device is the United States being the highest ranking. Comparing to the collective competitive power level 100 of the competing country, the collective competitive level of the export medical device is 60 below and 70-80 below being the highest ranking. Comparing to the quality level 100 of the United States, EU and Japan, the quality level of the export medical device is 80-90 below being the highest ranking. Comparing to the design level 100 of the United States, EU and Japan, the design level of the export medical device is 90-100 below being the highest ranking. Comparing to the technology level 100 of the United States, EU and Japan, the technology level of the export medical device is 80-90 below being the highest ranking. According to the SWOT analysis of competitive power of medical device industry in Gangwon area, the strength is the abundant expert manpower of the medical device in Wonju area. The weakness is the fragility of the brand recognition of the medical device industry. The opportunity is the demand increase of the new medical device owing to the advanced age of population. The threat is the difficulty of entry into overseas market owing to the request of the new specification certification of the medical device. In order to strengthen the export competitive power of the medical device industry in Gangwon area, the following measures should be taken by the government, local self-government body, related organization and medical device industry : the development of new technology and design, the enhancement of brand recognition. the acquisition of the foreign specification certification, the building of overseas distribution channel and after sales service channel, the positive participation in overseas medical device exhibition and opening of medical device exhibition, the training of expert manpower, the strengthening of overseas marketing, and the application of FTA and the establishment of counter measures against FTA. In conclusion, the medical device industry in Gangwon area has the difficulty in the entry into the overseas market owing to the shortage of overseas marketing capability. Therefore, the government and local self-government body should make the intensive and systematical support for overseas marketing of the medical device industry. For the support of overseas marketing, the government and local self-government body should provide positively the support of expenses for the acquisition of foreign specification certification, the support of participation in the overseas medical device exhibition, the despatch of market development mission, the increase of the support amount for R&D investment fund, and the training of expert manpower of medical devices.

  • PDF

FPGA를 이용한 SAW Device Reader Platform 구현 (SAW Device Reader Platform Using FPGA Implementation)

  • 정용현;손영태;김영길
    • 한국정보통신학회논문지
    • /
    • 제14권12호
    • /
    • pp.2805-2810
    • /
    • 2010
  • SAW Device 라는 Passive 소자는 ID Tag 나 소형센서들을 대체할 수 있는 MEMS 기술의 초소형 Device 다. 이 SAW Device 를 이용하면 독립된 공간이나 전원이 필요한 센서 제어 등을 대신할 수 있을 것이다. 이렇게 활용범위가 확대됨에 따라 다양한 SAW Device 를 사용하기 위한 플랫폼이 요구된다. 하지만 현재 SAW Sensor는 많은 발전을 해왔지만 SAW Sensor 를 활용할 수 있는 플랫폼의 발전은 미흡하기 때문에 본 논문에서는 이러한 SAW Device 의 측정이 가능한 SAW Reader를 FPGA를 이용하여 좀 더 간단하고 효율적인 Reader platform 을 구현해 보고자 한다.

Low Voltage Program/Erase Characteristics of Si Nanocrystal Memory with Damascene Gate FinFET on Bulk Si Wafer

  • Choe, Jeong-Dong;Yeo, Kyoung-Hwan;Ahn, Young-Joon;Lee, Jong-Jin;Lee, Se-Hoon;Choi, Byung-Yong;Sung, Suk-Kang;Cho, Eun-Suk;Lee, Choong-Ho;Kim, Dong-Won;Chung, Il-Sub;Park, Dong-Gun;Ryu, Byung-Il
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제6권2호
    • /
    • pp.68-73
    • /
    • 2006
  • We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

IoT 단말 인증 시스템 구현 (Implement IoT device Authentication System)

  • 강동연;전지수;한성화
    • 한국정보통신학회:학술대회논문집
    • /
    • 한국정보통신학회 2022년도 추계학술대회
    • /
    • pp.344-345
    • /
    • 2022
  • 스마트 팜이나 스마트 해양, 스마트 홈, 스마트 에너지 등 많은 분야에서 IoT 기술을 사용하고 있다. 이러한 IoT 서비스에는 다양한 IoT 단말이 이용된다. 여기서 IoT 단말은 물리적으로 다양한 장소에 설치된다. 악의적 공격자는 인가되지 않은 IoT device를 사용하여 IoT 서비스 접근하여, 인가되지 않은 중요 정보에 접근 후 이를 변조할 수 있다. 본 연구에서는 이러한 문제점을 개선하기 위하여 IoT 서비스에서 사용하는 IoT device의 단말 인증 시스템을 제안한다. 본 연구에서 제안하는 IoT device 인증 시스템은 IoT device에 탑재된 인증 모듈과 IoT 서버의 인증 모듈로 구성된다. 본 연구에서 제안하는 IoT device 인증 기능을 사용하면, 인가된 IoT Device만 서비스에 접근할 수 있으며 인가되지 않은 IoT device의 접근을 차단할 수 있다. 본 연구는 기본적인 IoT device 인증 메커니즘만을 제안하므로, 보안 강도에 따른 추가적인 IoT device 인증 기능의 추가 연구가 필요하다.

  • PDF

Two dimensional tin sulfide for photoelectric device

  • Patel, Malkeshkumar;Kim, Joondong
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
    • /
    • pp.389.1-389.1
    • /
    • 2016
  • The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

  • PDF