• 한국재료학회지
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• 제29권11호
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2007년도 학술논문요약집
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• pp.327-328
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• 2007

The deposition conditions for plating polonium have been optimized with deposition parameters such as pH, volume and temperature of the deposition and deposition time. In the tap water, the chemical yields of polonium forthe deposition solution adjusted to pH 0 were higher than those for the deposition solution adjusted to pH 2. This modified auto-deposition method made it possible to obtain reliable data of activity concentration of Po-210.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• 방사성폐기물학회지
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• 제14권4호
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• pp.321-329
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• 2016

가상의 심층처분 부지의 지하수 유동 모의 결과를 통해 처분 심도에 위치하는 처분공 지점에서의 지하수 유동량 및 해당 지점에서 지표 환경까지 지하수가 유동하는 경로의 거리와 경로를 통과하는데 걸리는 시간에 대한 수량적, 공간적 분포를 분석하여 그 결과를 처분공의 위치 결정에 이용할 수 있는 방안을 제시하였다. 지하수 유동량은 처분공 위치에서 계산된 지하수위를, 유동 거리와 경과 시간은 입자 추적 기법(particle tracking)을 이용하여 계산하였다. 지하수 유동량 및 유동 거리와 경과 시간의 공간적 분포를 이용하여 처분시설의 성능을 유지하는데 상대적으로 유리한 위치를 선별하고 특정한 제한 조건이 주어진 경우 제외되어야 하는 처분공 위치를 결정하여 처분공 배치에 이용할 수 있은 방안을 제시하였다. 또한 세 가지 정보를 함께 고려하여, 추가적인 처분공의 위치를 선정할 필요가 있을 경우 보다 유리한 확장 방향을 제시할 수 있는 방안도 논의되었다. 처분 심도에서의 지하수 유동 정보를 활용하여 처분공의 배치 방안을 결정하는 것은 처분시설의 성능 및 안전성 확보를 위해 기여할 수 있을 것으로 생각된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.23.2-23.2
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• 2009

Atomic layer deposition (ALD)have been proven to be a very attractive technique for the fabrication of advanced gate dielectrics and DRAM insulators due to excellent conformality and precise control of film thickness and composition, However, one major disadvantages of ALD is its relatively low deposition rate (throughput) because the deposition rate is typically limited by the time required for purging process between the introduction of precursors. In order to improve its throughput, many efforts have been made by commercial companies, for example,the modification reactor and development of precursors. However, any promising solution has not reported to date. We developed a new concept ALD system(Lucida TM S200) with high-throughput. In this process, a continuous flow of ALD precursor and purging gas are simultaneously introduced from different locations in the ALD reactor. A cyclic ALD process is carried out by moving the wafer holder up and down. Therefore, the time required for ALD reaction cycle is determined by speed of the wafer holder and vapor pressure of precursors. We will present the operating principle of our system and results of deposition.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.680-686
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• 2006

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.356-357
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• 2006

Tin oxide thin films have been prepared on display glass from mixtures of dibutyl tin diacetate as a tin source, oxygen as an oxidant by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The relationships between the properties of tin oxide thin films and various reaction parameters such as the deposition temperature, deposition time and the oxygen gas flow rate were studied. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and thinner thickness of deposited film led to decreasing grain size, surface roughness and electrical resistivity of the formed thin films at $325{\sim}425^{\circ}C$. The properties of fabricated $SnO_2$ films are highly changed with variations of substrate temperature and deposition time.

• 방사성폐기물학회지
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• 제21권4호
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• pp.517-529
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• 2023

The objectives of this paper are: (1) to conduct the thermal analyses of the disposal cell using COMSOL Multiphysics; (2) to determine whether the design of the disposal cell satisfies the thermal design requirement; and (3) to evaluate the effect of design modifications on the temperature of the disposal cell. Specifically, the analysis incorporated a heterogeneous model of 236 fuel rod heat sources of spent nuclear fuel (SNF) to improve the reality of the modeling. In the reference case, the design, featuring 8 m between deposition holes and 30 m between deposition tunnels for 40 years of the SNF cooling time, did not meet the design requirement. For the first modified case, the designs with 9 m and 10 m between the deposition holes for the cooling time of 40 years and five spacings for 50 and 60 years were found to meet the requirement. For the second modified case, the designs with 35 m and 40 m between the deposition tunnels for 40 years, 25 m to 40 m for 50 years and five spacings for 60 years also met the requirement. This study contributes to the advancement of the thermal analysis technique of a disposal cell.

• 한국표면공학회지
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• 제38권4호
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• pp.150-155
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• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.