• Childhood Kidney Diseases
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• v.2 no.2
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• pp.110-117
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• 1998

Purpose : Henoch-$Sch{\ddot{o}}nlein$ purpura nephritis(HSPN) accompanied by nephrotic syndrome(NS) is known to have a poor prognosis and effective treatment is still controversial, even though both corticosteroids and immunosuppresant have been used for therapy. Cyclosporine A(CsA) is a well known immunosuppresant and widely used in renal transplantation and glomerular diseases especially steroid resistant. The aims of this study was to evaluate the therapeutic effect of CsA and to compare CsA with previously reported our data of rifampin(RFP) and azathioprine(AZA) in children with HSPN accompanied by NS. Methods : 37 HSPN patients with NS confirmed by renal biopsy were selected. Of these, 17 patients were treated with CsA(5 mg/kg/day) fur 6-8 months, 7 children were treated with RFP(10-20 mg/kg/day) for 9-12 months and 13 patients were treated with AZA(2 mg/kg/day) fur 8 months. Along with these regimens, low dose oral prednisolone(0.5-1 mg/kg, qod) was also used. Sequential renal biopsy was done in all patients 1 month after termination of treatment. Results : Complete remission rate of nephrotic syndrome was $58.8\%$ in CsA, $57.1\%$ in RFP and $38.4\%$ in AZA group after 17, 22, 11 months of mean follow-up period. Overall remission rate including partial remission was $88.2\%$ in CsA, $85.7\%$ in RFP and $84.6\%$ in AZA group. Disappearance rate of hematuria was $58.8\%$ in CsA, $57.1\%$ in RFP and $46.2\%$ in AZA group. Improvement of grade of clinical status was observed in 17 out of 17 CsA, 7 out of 7 RFP and 10 out of 13 AZA group. Improvement of pathologic class on sequencial renal biopsy was shown in 5 CsA($29.4\%$), none RFP($0\%$) and 2 AZA group($12.4\%$). Improvement on histologic immune-deposition was seen in 15 CsA($88.2\%$), 6 RFP($85.9\%$) and 4 AZA group($30.8\%$). Conclusion : In conclusion, Both CsA and RFP treated groups showed better result in complete remission rate of nephrotic syndrome and significant improvement of histologic immune-deposition compared with AZA treated group(p=0.004). So, we recommend CsA and REP rather than AZA for immunosuppresant treatment in HSPN with nephrotic syndrome.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Polymer(Korea)
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• v.34 no.1
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• pp.25-31
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• 2010

Polymer core and metal shell composite particles have been prepared by the electroless nickel plating on the surface of monodisperse polystyrene microspheres. Various sizes of polystyrene particles with highly monodisperse state could be synthesized by controlling the dispersion medium in dispersion polymerization. Electroless nickel plating was performed on the polystyrene particle with diameter of $3.4\;{\mu}m$. The morphology of polystyrene/nickel composite particles was investigated to see the effect of the plating conditions, such as the $PdCl_2$ and glycine concentrations and the dropping rate of nickel plating solution, on nickel deposition. With $PdCl_2$ and glycine concentrations at more than 0.4 g/L and 1 M, respectively, more uniform nickel layer and less precipitated nickel aggregates were formed. At the given plating time of 2 h, the same amount of plating solution was introduced by varying the dropping rate. Though the effect of dropping rate on particle morphology was not noticeable, the dropping rate of 0.15 mL/min for 60 min showed rather uniform plating.

• The Journal of the Petrological Society of Korea
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• v.16 no.3
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• pp.180-188
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• 2007

We carried on CHIME zircon age dating for the Gamaksan alkaline meta-granitoid (GAM) from the northwestern margin of the Gyeonggi massif, and obtained a timing of regional metamorphism at $247{\pm}14Ma$ (n=103, MSWD=0.92). The age is compatible with Permo-Triassic regional metamorphic ages from the Imjingang Belt which has been regarded as possible eastward extension of Triassic collisional belt in China. Considering an extensional ductile shearing of the Gyeonggi (Kyonggi) Shear Zone which deformed GAM occurred at 226 Ma with temperature condition about $500^{\circ}C$ (Kim et al., 2000), and the Late Triassic to Early Jurassic Daedong Group unconformably overlies on top of the ductile shear zone, cooling rate of GAM over the period can be estimated as $18{\sim}10^{\circ}C/Ma$. Since new zircon begin to pow at temperature higher than upper-amphibolite facies condition (${\sim}700^{\circ}C$), cooling rate of GAM from peak metamorphism (247 Ma) to deposition of the Daedong G.oup (${\sim}$Early Jurassic) would be higher than $10^{\circ}C/Ma$. Such rapid cooling rate is compatible with that reported from exhumation stage of the Dabie-Sulu Belt, and supports an idea that the Gyeonngi massif is a part of Permo-Triassic orogenic belt in East Asia.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.22-27
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• 2017

$TiO_2$ films, thickness of $1{\sim}30{\mu}m$ were deposited on glass substrate at room temperature by room temperature granule spray in vacuum. The starting powder was calcinated at $600^{\circ}C$ for 4 h using $Al_2O_3$ crucible in the furnace. The particle size of the $TiO_2$, $1.5{\mu}m$ was measured by a particle size analyzer. The effect of different process parameters such as number of pass, gas flow rate and feeder voltage was studied. As the number of passes increased, the film thickness increased proportionally due to adequate kinetic energy conserved. The effect of three different flow rates (i.e. 15, 25, and 35 LPM) on deposited film was investigated. As gas flow rate increased, the film thickness increased up to 25 LPM and then decreased. Higher feeder voltage with low flow rate of 15 LPM resulted in unsufficient coating thickness due to insufficient kinetic energy. Microstructure of $TiO_2$ films was investigated by scanning electron microscope and high resolution tramission electron microscope.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.38 no.5
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• pp.291-297
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• 2005

This study evaluated the quality of commercial extruded pellet (EP) diet of five companies (A, B, C, D and E) for olive flounder Paralichtys olivaceus by biochemical analyses, physical properties and growth performance. The proximate analyses of five EP diets showed $3.2-10.0\%$ of moisture, $49.3-55.5\%$ of crude protein, $4.6-14.7\%$ of crude lipid, $7.0-13.8\%$ of crude ash, $0.7-10.5\%$ of crude fiber, $10.0-27.3\%$ of itrogen free extract (NFE), 304.3-395.4kcal/100g of digestible energy (DE) and 6.1-7.1 of calorie/protein ratio (C/P). Peroxide value (POV) was highest in diet D (47.4 meq/kg) as compared to other diets which in the range of 4.0-11.7 meq/kg. Total amino acid contents were ranged from 46.54 to $55.46\%$ with the highest content in diet B and the lowest content in diet C. Essential amino acid of diet C was lowest $(7.43\%)$ as compared to other diets which in the range of $19.43-20.30\%$. Saturated fatty acid was higher in diet A $(37.65\%)$ followed by diet B $(36.32\%)$, diet E$(34.39\%)$, diet C$(30.95\%)$ and diet D$(30.10\%)$. EPA+DHA were highest in diet E$(30.78\%)$ and lowest in diet C$(15.48\%)$. The floating rate after 6 hours on the sea water was highest in diet C$(100\%)$ followed by diet B$(40\%)$ and A$(10\%)$. However, diets D and E were completely settled down after 1 and 2 hours, respectively. The range of relative expansion rate was $27.2-49.3\%$ for all diets and all reached the peak at 2-3 hours. The water absorption rate of diets C and D was lowest, and diet E was highest at 1 hour after deposition of sea water. Growth rate was higher in diet B$(22.3\%)$ and E$(21.3\%)$. Feed efficiency was higher in diet A$(109.7\%)$ and E$(105.3\%)$ and was significantly lowest in diet D$(80.7\%)$. The protein efficiency ratio was highest in diet E (2.72) and lowest in diet D (1.76). These results suggest that there is a necessity for improvement of nutrients balance and feed physical properties to fulfill the nutrient requirements and digestive characteristics of fishes in commercial EP diets.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.7
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• pp.1-9
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• 2012

In this paper, resistance temperature detector (RTD) integrated into the LED package is proposed in order to solve the temperature dependence of LED's optical properties. To measure the package temperature in real time, the RTD type temperature sensor having excellent accuracy and linearity between temperature change and resistance change was adopted. A stable metallic film is required for long term reliability and stability of the RTD type temperature sensor. Therefore, deposition and annealing condition for the film were determined. Based on the determined condition, the RTD type temperature sensor with the sensitivity of about $1.560{\Omega}/^{\circ}C$ was fabricated inside the LED package. In order to configurate the LED package system keeping the constant brightness regardless of the temperature, additional conversion circuit and control circuit boards were fabricated and added to the fabricated LED package. The proposed system was designed to compensate the light intensity caused by temperature change using the variable duty rate of driving current. As a result, the duty rate of PWM signal which is the output signal of the configurated system was changed with the temperature change, and the duty rate was similarly varied with the target duty rate. Consequently, it was focused the fabricated RTD can be used for compensating the optical properties of LED and the LED package which exhibits constant brightness regardless of the temperature change.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.