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Fabrication of the Wafer Level Packaged LED Integrated Temperature Sensor and Configuration of The Compensation System for The LED's Optical Properties  

Kang, In-Ku (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
Kim, Jin-Kwan (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
Lee, Hee-Chul (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
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Abstract
In this paper, resistance temperature detector (RTD) integrated into the LED package is proposed in order to solve the temperature dependence of LED's optical properties. To measure the package temperature in real time, the RTD type temperature sensor having excellent accuracy and linearity between temperature change and resistance change was adopted. A stable metallic film is required for long term reliability and stability of the RTD type temperature sensor. Therefore, deposition and annealing condition for the film were determined. Based on the determined condition, the RTD type temperature sensor with the sensitivity of about $1.560{\Omega}/^{\circ}C$ was fabricated inside the LED package. In order to configurate the LED package system keeping the constant brightness regardless of the temperature, additional conversion circuit and control circuit boards were fabricated and added to the fabricated LED package. The proposed system was designed to compensate the light intensity caused by temperature change using the variable duty rate of driving current. As a result, the duty rate of PWM signal which is the output signal of the configurated system was changed with the temperature change, and the duty rate was similarly varied with the target duty rate. Consequently, it was focused the fabricated RTD can be used for compensating the optical properties of LED and the LED package which exhibits constant brightness regardless of the temperature change.
Keywords
Temperature Sensor; Wafer Level Package; RTD; LED5;
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1 D. G. Todorov, and L. G. Kapisazov, "LED thermal management" in Proc. of Electronics' 2008, Conf. on Sozopol, Bulgaria, pp. 139-144, Sep. 2008,
2 J. M. Kang, J. H. Choi, and et al."Fabrication and thermal analysis of wafer level light emitting diode packages," IEEE Elec. Dev. Lett. Vol. 29, no. 10, pp. 1118-1120, Oct. 2008.   DOI
3 C. Y. Lee, A. Su, and et al. "Sensor fabrication method for in situ temperature and humidity monitoring of light emitting diodes," Sensor, Vol. 10, no. 4, pp. 3363-3372. Apr. 2010.   DOI   ScienceOn
4 E. J. P. Santos and I. B. Vasconcelos, "RTD based smart temperature sensor : Process development and circuit design," in Proc. of Microelectronics' 2008. Conf. on Nis, Serbia, May 2008.
5 M. T. Kara and M. E. Rizkalla, "A 3-wire differential resistance measurement circuit," Instrumentation and Measurement Technology 1993. Conf. on Irvine, CA, USA, May 1993.
6 K. Blake, "Transmit Filter Handles ADSL Modem Tasks," Electronic Design,. Vol. 47 no. 13, p23 June 1999
7 W. Yu and G. Lisi, "High efficiency DC-DC converter with twin-bus for dimming LED lighting," IEEE Energy Conversion Congress and Exposition, 2010. Conf. on Atlanta, USA, p457-462 Sept. 2010
8 한국과학기술원, "RTD 온도센서 개발," 보고서, 1992년 12월.
9 M. A. Angadi and L. A. Udanchan, "Electrical properties on thin nickel films", Thin Solid Films, Vol. 79, no. 2, pp.149-153 May 1981.   DOI   ScienceOn
10 J. S. Hirschhorn, "On the electrical resistivity of thin nickel films," J. Phys. Chem. Solids, Vol. 23, pp.1821-1822 Mar. 1962.   DOI   ScienceOn
11 T. Hovorun and A. Chornous, "Thin Overlayer Influence on Electrophysical properties of Nickel films," Thin Solid Films, Vol. 317, no. 1-2, pp.202-205, Apr. 1998.   DOI   ScienceOn
12 W. Schemminger and D. Stark, "The influence of deposition temperature on the electrical resistance of thin Cu films," Surface Science, Vol. 190, no. 2, pp.1103-1110, Oct. 1987.
13 G. S. Chung and C. H. Kim, "RTD characteristics for micro-thermal sensors," Microelectronics Journal, Vol. 39, no. 12, pp.1560-1563 Dec. 2008.   DOI   ScienceOn
14 V. Vand, "A theory of the irreversible electrical resistance changes of metallic films evaporated in vacuum," Phy. Soc. Vol. 55, no. 3, pp.222-246, May 1943.   DOI   ScienceOn