• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1532-1535
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• 1996

Diamond-like carbon (DLC) films have been prepared by a widely-used plasma CVD with an rf (13.56MHz) plasma of $CH_4$ gas. The hydrogen incorporated in DLC films plays an important role of determining the film properties, but its exact role has not been clear. In this study, the effect of hydrogen on the film properties of DLC has been examined by adding the hydrogen gas to the $CH_4$ gas during deposition and by exposing the prepared film to the hydrogen plasma. As the content of additive hydrogen gas increases, the density and hardness of the film increase, but the growth rate decreases. The FT-IR spectroscopy results show that the number of C-H bonds decreases with increasing the hydrogen gas. Also, the variation in the position of "G" and "D" peaks due to additive hydrogen, which has been measured by the Raman spectroscopy, indicates of $sp^3$ fraction.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.188-193
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• 2000

A more accurate life prediction for gas turbine blade takes into account the material behavior under the complex thermo-mechanical fatigue(TMF) cycles normally encountered in turbine operation. An experimental program has been carried out to address the thermo-mechanical fatigue life of the IN738LC nickel-base superalloy. In the first phase of the study, out-of-phase and in-phase TMF experiments have been performed on uncoated and coated materials. In the temperature range investigated. the deposition of NiCrAlY air plasma sprayed coating did not affect the fatigue resistance. In the second phase of the study, a physically-base life prediction model that takes into account of the contribution of different damage mechanisms has been applied. This model was able to reflect the temperature and strain rate dependences of isothermal cycling fatigue lives, and the strain-temperature history effect on the thermo-mechanical fatigue lives.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.6
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• pp.459-464
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• 2008

We present a novel microcantilever device with nano-interdigitated electrodes (nano-IDEs) and DNA selective immobilization on the nano-IDEs for biosensing applications. Using the nano-IDEs and cyclic voltammetric methods, we have achieved selective immobilization of DNA with submicrometer spatial resolution on a freestanding microcantilever. $70{\sim}500\;nm$-wide gold (Au) nano-IDEs are fabricated on a low-stress SiNx microcantilever with dimensions of $100{\sim}600\;{\mu}m$ in length, and $15{\sim}60\;{\mu}m$ in width, with a $0.5\;{\mu}m$ thickness using electron beam lithography and bulk micromachining. Streptavidin is selectively deposited on one side of the nano-IDEs using cyclic voltammetry at a scan rate of 0.1 V/s with a range of $-0.2{\sim}0.7\;V$ during $1{\sim}5$ cycles. The selective deposition of dsDNA is confirmed by fluorescence microscopy after labeling with YOYO-1 dye.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.234.2-234.2
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• 2014

Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.5
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• pp.399-405
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• 1990

Rapid Thermal Process(RTP) has been used to precisely control and study the reaction rate for the formation of refractory titanuium silicide. Samples were prepared by sputtering deposition layer of titanium on n-type, poly-deposit silicon wafers. The process were then sujected to a matrix of rapid time-temperature profile under nitrgen, argon gas ambient to precisely control the silicide formation. Reacted films were analyzed by the sheet resistance measursrement, SEM, ASR and X-ray diffraction. Results were shown that the resistivity of the silicide films are below 20u-cm and the thickness of silicide films are about two times than that of as-deposited titanium films. Silicidation ambient was likely to happen at the same tamperature-time condition for argon and nitrogen gas.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.658-661
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• 2002

Chemical species during growth of carbon nanotubes (CNTs) in direct current-plasma enhanced chemical vapor deposition were studied in details using $C_3H_4-NH_3$ and $CO-NH_3$ mixtures through optical emission spectroscopy (OES). In the $C_3H_4-NH_3$ system, the relative intensities of CN (388.3 nm) and CH (431.4 nm) decreased and that of $C_2$ (436 nm) increased, leading to $sp^2$-graphization into the CNT structure, leading to improvement of field emission property of CNTs. In the $CO-NH_3$ system, the trend is completely reversed. Attributing to the atomic oxygen for helping the graphitization of carbon, CNTs could be grown under the flow rate of CO (180 sccm)-$NH_3$ (10 sccm). Through these results, we suggest the growth mechanism in our system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.27-30
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• 1988

This paper is investigated on the sublimation in obliguely deposited a-$Se_{75}Ge_{25}$ films. With varying the treatment conditions, the transmittance in each of $0^{\circ}$, $60^{\circ}$, and $80^{\circ}$-deposited films and the absorbance in $80^{\circ}$-deposited film were measured. By increasing the angle of deposition, the variation of transmittance in post-exposure annealing film showed the characteristic different from that in only exposed film or annealed film. And the changes of thickness in $80^{\circ}$-deposited film were measured. The results showed that the changing rate of thickness was 1.4% in exposed film and 9.4% in post-exposure annealing film. Therefore, in $80^{\circ}$-deposited film, the possibility for sublimatin due to physical and chemical change by post-exposure annealing can be suggested.

• Textile Coloration and Finishing
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• v.22 no.1
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• pp.77-82
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• 2010

Highly conductive yarn was successfully obtained using electroless nickel plating method with palladium activation. In the presence of palladium seed on surface of fibers as a catalyst, continuos nickel layer produced on surface of fibers by reducing $Ni${2+}$ ion in the electroless plating bath to $Ni^0$. It was found that the Pd-activation using $SnCl_2$ and $PdCl_2$ to deposit palladium seeds on the surface of fibers plays a key role in the subsequent electroless plating of nickel. It also found that electroless nickel plating on the fibers can induce the nickel-plated $ELEX^{(R)}$ fibers to improve the electrical conductivity of the fibers. The thickness of nickel coating layer on the Pd-activated $ELEX^{(R)}$ fibers and specific conductivity of the fiber were increased through electroless plating time. The temperature of nickel plating bath was very effective to enhance the nickel deposition rate.

• Journal of Power System Engineering
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• v.5 no.1
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• pp.89-96
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• 2001

Decorative property of chromium deposition from oxalic acid bath containing chromium oxide and ammonium sulfate, has been examined over a wide range of bath compositions and plating conditions. The followings were determined as optimum bath composition, $CrO_3\;200{\sim}250g/{\ell},\;H_2C_2O_4{\cdot}2H_2O\;500{\sim}700g/{\ell},\;(NH_4){_2}SO_4\;40{\sim}120g/{\ell}$, and operation conditions; pH $2.0{\sim}2.5$, current density of $15{\sim}250Adm^2 $ at the bath temperatures of $30{\sim}80^{\circ}C$. Bright chromium deposits were obtained over a wide range of ammonium sulfate concentration, bath temperature, and current density. The current efficiency decreased with increasing current density and bath pH, and increased with Increasing bath temperature. The highest current efficiency was obtained in the bath containing $80g/{\ell}$ of ammonium sulfate. Bright chromium deposits were not obtained at conditions of all the highest current efficiencies.

• Journal of the Korean Society for Heat Treatment
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• v.27 no.4
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• pp.175-179
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• 2014

IGZO thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates and then annealed in vacuum for 30 minutes at 100, 200 and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and sheet resistance of as deposited films were 91.9% and $901{\Omega}/{\Box}$, respectively, the films annealed at $300^{\circ}C$ show the optical transmittance of 95.4% and the sheet resistance of $383{\Omega}/{\Box}$. The experimental results indicate that vacuum-annealed IGZO film at $300^{\circ}C$ is an attractive candidate for the transparent thin film transistor (TTFT) in large area electronic applications.