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http://dx.doi.org/10.12656/jksht.2014.27.4.175

Effect of Vacuum Annealing on the Properties of IGZO Thin Films  

Kim, So-Young (School of Materials Science and Engineering, University of Ulsan)
Kim, Sun-Kyung (School of Materials Science and Engineering, University of Ulsan)
Kim, Seung-Hong (School of Materials Science and Engineering, University of Ulsan)
Jeon, Jae-Hyun (School of Materials Science and Engineering, University of Ulsan)
Gong, Tae-Kyung (School of Materials Science and Engineering, University of Ulsan)
Son, Dong-Il (Dongkook Ind. Co., Ltd.)
Choi, Dong-Hyuk (Dongkook Ind. Co., Ltd.)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Society for Heat Treatment / v.27, no.4, 2014 , pp. 175-179 More about this Journal
Abstract
IGZO thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates and then annealed in vacuum for 30 minutes at 100, 200 and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and sheet resistance of as deposited films were 91.9% and $901{\Omega}/{\Box}$, respectively, the films annealed at $300^{\circ}C$ show the optical transmittance of 95.4% and the sheet resistance of $383{\Omega}/{\Box}$. The experimental results indicate that vacuum-annealed IGZO film at $300^{\circ}C$ is an attractive candidate for the transparent thin film transistor (TTFT) in large area electronic applications.
Keywords
IGZO; RF Magnetron sputter; Vacuum annealing; Figure of Merit;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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