Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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Effect of Vacuum Annealing on the Properties of IGZO Thin Films

진공열처리에 따른 IGZO 박막의 특성 변화

  • Kim, So-Young (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Sun-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Seung-Hong (School of Materials Science and Engineering, University of Ulsan) ;
  • Jeon, Jae-Hyun (School of Materials Science and Engineering, University of Ulsan) ;
  • Gong, Tae-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Son, Dong-Il (Dongkook Ind. Co., Ltd.) ;
  • Choi, Dong-Hyuk (Dongkook Ind. Co., Ltd.) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • Received : 2014.03.20
  • Accepted : 2014.04.08
  • Published : 2014.07.30
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Abstract

IGZO thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates and then annealed in vacuum for 30 minutes at 100, 200 and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and sheet resistance of as deposited films were 91.9% and $901{\Omega}/{\Box}$, respectively, the films annealed at $300^{\circ}C$ show the optical transmittance of 95.4% and the sheet resistance of $383{\Omega}/{\Box}$. The experimental results indicate that vacuum-annealed IGZO film at $300^{\circ}C$ is an attractive candidate for the transparent thin film transistor (TTFT) in large area electronic applications.

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