• 한국재료학회지
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• 제23권12호
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• pp.702-707
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• 2013

High-quality ${\beta}$-silicon carbide (SiC) coatings are expected to prevent the oxidation degradation of carbon fibers in carbon fiber/silicon carbide (C/SiC) composites at high temperature. Uniform and dense ${\beta}$-SiC coatings were deposited on carbon fibers by low-pressure chemical vapor deposition (LP-CVD) using silane ($SiH_4$) and acetylene ($C_2H_2$) as source gases which were carried by hydrogen gas. SiC coating layers with nanometer scale microstructures were obtained by optimization of the processing parameters considering deposition mechanisms. The thickness and morphology of ${\beta}$-SiC coatings can be controlled by adjustment of the amount of source gas flow, the mean velocity of the gas flow, and deposition time. XRD and FE-SEM analyses showed that dense and crack-free ${\beta}$-SiC coating layers are crystallized in ${\beta}$-SiC structure with a thickness of around 2 micrometers depending on the processing parameters. The fine and dense microstructures with micrometer level thickness of the SiC coating layers are anticipated to effectively protect carbon fibers against the oxidation at high-temperatures.

• 한국정밀공학회지
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• 제23권7호
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• pp.101-107
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• 2006

Cold gas dynamic spray or cold spray is a novel manufacturing method for coatings. Cold spray is a high rate and direct material deposition process that utilizes the kinetic energy of particles sprayed at high velocity (300-1,200m/s). In this research, a technique to repair the damaged mold by cold spray deposition and mechanical machining was proposed. An aluminum 6061 mold with three-dimensional surface was fabricated, intentionally damaged and material-added by cold spray, and its original geometry was re-obtained successfully by Computer Numerical Control (CNC) machining. To investigate deformation of material caused by cold spray, deposition was conducted on thin aluminum plates ($100mm{\times}100mm{\times}3mm$). The average deformation of the plates was $205{\sim}290{\mu}m$ by Coordinate Measurement Machine (CMM). In addition, the cross section of deposited layer was analyzed by scanning electron microscopy (SEM). To compare variation of hardness, Vickers hardness was measured by micro-hardness tester.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.440-440
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• 2011

We report on the non-volatile memory characteristics of a bistable organic memory (BOM) device with Au nanoparticles (NPs) embedded in a conducting poly N-vinylcarbazole (PVK) colloids hybrid layer deposited on flexible polyethylene terephthalate (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of ${\pm}3$ V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as $1{\times}105$. The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above $1.5{\times}105$ cycles and a high ON/OFF ratio of ~105 could be achieved consistently even after quite a long retention time of more than $1{\times}106$ s.

• 한국진공학회지
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• 제19권5호
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• pp.385-390
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• 2010

원자층 증착법(Atomic Layer Deposition, ALD)을 이용하여 ZnO 나노막대에 ZnO:Al과 $Al_2O_3$를 코팅하여 coaxial 형태의 나노선 구조를 제작하여 광학적 특성을 분석하였다. 반도체인 ZnO:Al을 코팅하는 경우 Al이 ZnO층에 확산되어 ZnO에 도핑이 되는 효과를, $Al_2O_3$를 코팅하는 경우 반도체-절연체 계면 상태가 존재함을 광전이 특성을 이용하여 확인하였다.

• 한국진공학회지
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• 제22권1호
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• pp.26-30
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• 2013

고유전율 절연체의 한 종류인 산화알루미늄 박막을 전자빔 증착법으로 형성하는 과정에서 산소 이온 빔의 조사를 이용, 산소 이온 빔 보조 증착 효과를 기대하였다. 산소 이온 보조 증착법으로 형성된 산화 알루미늄 박막의 두께 측정 결과, 높은 에너지에서의 이온 빔에 의한 식각 효과를 확인할 수 있었으며, 산소 이온 보조 증착 결과보다 높은 커패시턴스 값도 관찰할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.299-299
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• 2011

A dipolar interlayer can cause dramatic changes in the device characteristics of organic field-effect transistors (OFETs) or photovoltaics. A shift in the threshold voltage, for example, has been observed in an OFET where the organic semiconductor active layer is deposited on SiO2 modified with a dipolar monolayer. Dipolar molecules can similarly be used to change the current-voltage characteristics of organic-inorganic heterojunctions. We have conducted a series of experiments in which different molecular linkages are placed between a pentacene thin film and a silicon substrate. Interface modifications with different linkages allow us to predict and examine the nature of tunneling through pentacene on modified Si surfaces with different dipole moment. The molecular-scale structure and the tunneling properties of pentacene thin films on modified Si (001) with nitrobenzene and styrene were examined using scanning tunneling spectroscopy. Electronic interfaces using organic surface dipoles can be used to control the band lineups of a semiconductor at organic/inorganic interfaces. Our results can provide insights into the charge transport characteristics of organic thin films at electronic interfaces.

• 한국재료학회지
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• 제13권2호
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• pp.133-136
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• 2003

Sn-2.5Cu alloy layers were deposited on the Alloy 42 lead-frame substrates by the electroplating method, and their microstructures, adhesion strength, and electrical resistivity were measured to evaluate the applicability of Sn-Cu alloy as a surface finishing material of electronic parts. The Sn-2.5Cu layers were electroplated in the granular form, and composed of pure Sn and Cu$_{6}$Sn$_{5}$ intermetallic compound. Surfaces of the electroplated Sn-2.5Cu layers were rather rough and also the thickness variance was large. The adhesion strength of the Sn-2.5Cu electroplated layers was highly comparable to that of the electroplated Cu alloy layer and the electrical conductivity was about 10 times higher than the pure Sn. After the 20$0^{\circ}C$ 30 min. annealing of the electroplated Sn-2.5Cu layers, the surface roughness was reduced, and adhesion strength and conductivity were improved. These results showed the Sn-Cu alloys can be used as an excellent surface finishing material.ial.

• 센서학회지
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• 제15권1호
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• pp.65-70
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• 2006

Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.

• 열처리공학회지
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• 제23권5호
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• pp.245-248
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Ni/ITO (INI) multilayer films were deposited on the glass substrates with a reactive magnetron sputtering system without intentional substrate heating and then the influence of the Ni interlayer on the methanol gas sensitivity of ITO and INI film sensors were investigated. Although both ITO and INI film sensors have the same thickness of 100 nm, INI sensors have a sandwich structure of ITO 50 nm/Ni 5 nm/ITO 45 nm. The changes in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm were measured. It is observed that the INI film sensors show the higher sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the INI film sensor have the potential to be used as improved methanol gas sensors.

• 한국표면공학회지
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• 제51권3호
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• pp.185-190
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• 2018

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.