• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.651-655
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• 2017

This work reports the surface morphology and transmittance of copper oxide thin films for semitransparent solar cell applications. We prepared the oxide specimens by subjecting copper thin films to an oxidation reaction at annealing temperatures ranging between $100^{\circ}C$ and $300^{\circ}C$. The color of the as-deposited specimen was red, but changed to purple at the annealing temperature of $300^{\circ}C$. The surface morphology and transmittance of the specimens were significantly dependent on the annealing temperature and thickness of the copper films. Copper oxide nanoparticles prepared from a 20-nm-thick copper film at an annealing temperature of $300^{\circ}C$ provided a maximum transmittance of 93%. The obtained optical characteristics and surface morphology suggest that copper oxide thin films prepared by an oxidation reaction can be potentially employed as color- and transmittance-adjusting layer in semitransparent thin solar cells.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.39-43
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• 2016

The structural, electrical properties of Ga doped MgZnO transparent conductive oxide (TCO) films by ratio-frequency(RF) magnetron sputtering were investigated. Ga doped MgZnO TCO films were deposited on the sapphire substrates at $200^{\circ}C$ varying growth thickness 200 to 600 nm. The optical properties of Ga doped MgZnO TCO films were showed above 85% transmittance from 300 to 1000 nm region. In addition, the current density ($J_{SC}$) of $Cu(In,Ga)Se_2$ (CIGS) solar cells was improved by using the MgZnO:Ga films of 500 nm thickness because of outstanding electrical properties. The $Cu(In,Ga)Se_2$ solar cells with MgZnO:Ga transparent conducing layer yielded an efficiency of 9.8% with current density ($31.8mA/cm^2$), open circuit voltage (540.2 V) and fill factor (62.2) under AM 1.5 illumination.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.235-241
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• 2005

Incorporation of solid electrodes frequently involves plasma-based processing. The effect of plasma can influence the physical characteristics, depending on the magnitude in plasma. The undesired feature of plasma-induced damage should be prevented in characterizing the ultra-thin materials, such as ultra-thin films and organic monolayers. The current work at first proves the applicability of a liquid phase electrode in the electrical/dielectric properties through comparative work using Al and Hg on ultrathin $Al_2O_3$ films deposited through atomic layer deposition at low temperature: Two types of metals such as Aluminum (Al) and mercury (Hg) were used as electrodes in $Al_2O_3$ thin films in order to investigate the effect of electrode preparation on the current-voltage characteristics and impedance features as a function of thickness in $Al_2O_3$ film thickness. The success of Hg in $Al_2O_3$ thin films is applied to the AC and DC characterization of the organic monolayers obtained using the Langmuir-Blodgett method. From the DC current-voltage characteristics, the diode-like response is found to originate from the bulk response of the organic materials, evidenced by the fact and the capacitance is inversely related to the absolute thickness of organic layers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• ALGAE
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• v.24 no.4
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• pp.239-248
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• 2009

Fluorescence and electron microscopy were used to examine epidermal shedding in the fucoid alga, Ascophyllum nodosum. Mature meristoderm cells are ca. 50-100 x 30-40 ${\mu}m$ and highly polarized, with a single nucleus and chloroplasts near the base of the cell. Nuclei in these cells undergo mitosis when they are dividing to form a new cortical cell towards the middle of the frond, or anticlinal divisions as part of frond elongation. However, cytokinesis also occurs regularly in these cells when a new periclinal wall is deposited at about 30% of the cell length from the apical end. The newly formed distal cells are anucleate and without chloroplasts. Following cytokinesis the tangential walls then break at the thinnest point. The whole process is synchronous in adjoining epidermal cells across large areas of the frond surface, and this layer dehisces from the thallus. This is the only known plant or algal system in which cytokinesis regularly occurs in the absence of mitosis. We consider this process a novel form of programmed cell death.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.7
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• pp.999-1005
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• 2004

A new stamp fabrication technique for the soft lithography has been developed in the range of several microns by means of a nano-replication printing (nRP) process. In the nRP process, a figure or a pattern can be replicated directly from a two-tone bitmap figure with nano-scale details. A photopolymerizable resin was polymerized by the two-photon absorption which was induced by a femtosecond laser. After the polymerization of master patterns, a gold metal layer (about 30 ㎚ thickness) was deposited on the fabricated master patterns for the purpose of preventing a join between the patterns and the PDMS, then the master patterns were transferred in order to fabricate a stamp by using the PDMS (poly-dimethylsiloxane). In the transferring process, a few of gold particles, which were isolated from the master patterns, remained on the PDMS stamp. A gold selective etchant, the potassium iodine (KI) was employed to remove the needless gold particles without any damage to the PDMS stamp. Through this work, the effectiveness of the nRP process with the PDMS molding was evaluated to make the PDMS stamp with the resolution of around 200 ㎚.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.3
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• pp.68-71
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• 2008

Transdermal and topical drug delivery with minimal tissue damage has been an area of vigorous research for a number of years. Our research team has initiated the development of an effective method for delivering drug particles across the skin (transdermal) for systemic circulation, and to localized (topical) areas. The device consists of a micro particle acceleration system based on laser ablation that can be integrated with endoscopic surgical techniques. A layer of micro particles is deposited on the surface of a thin metal foil. The rear side of the foil is irradiated with a laser beam, which generates a shockwave that travels through the foil. When the shockwave reaches the end of the foil, it is reflected as an expansion wave and causes instantaneous deformation of the foil in the opposite direction. Due to this sudden deformation, the microparticles are ejected from the foil at very high speeds, and therefore have sufficient momentum to penetrate soft body tissues. We have demonstrated this by successfully delivering cobalt particles $3\;{\mu}m$ in diameter into gelatin models that represent soft tissue with remarkable penetration depth.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• Corrosion Science and Technology
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• v.2 no.1
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• pp.7-11
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• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• Korean Journal of Optics and Photonics
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• v.21 no.1
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• pp.1-5
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• 2010

In this study, we propose a grating structure using guided-mode resonance (GMR) to increase the absorption efficiency of a silicon solar cell. The proposed solar cell design consists of a one-dimensional diffraction grating and a planar waveguide layer of poly-silicon deposited on a silver reflector. We investigate the influence of structure parameters such as grating period, waveguide thickness, grating width and grating depth. Optimal parameters are found using the particle swarm optimization (PSO) algorithm. In the optimized GMR-assisted solar cell, absorption efficiency up to 65.8% is achieved in the wavelength range of 300 nm~750 nm.