• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.44-44
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• 2008

GdBCO coated conductor have been fabricated using reactive co-evaporation. The batch type co-deposition system was specially designed and was named EDDC (evaporation using drum in dual chamber) that is possible to deposit superconducting layer with optimum composition ratio of materials at temperature over $700^{\circ}C$ and several mTorr of oxygen. The IBAD-MgO substrate with the architecture of LaMnO3(LMO)/IBAD-MgO/Hastelloy was used for coated conductor. In this study, GdBCO superconducting layer was deposited on IBAD-MgO substrate at optimal oxygen partial pressure (pO2) and deposition temperature. After fabrication of GdBCO coated conductor, critical current density was measured by 4-probe method. Surface morphology and texture of GdBCO coated conductors were analyzed by the SEM and XRD, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.64-69
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• 1984

We found that the maximum efficiency of Al-MIS (p-Si) solar ceil was shown at 80$\AA$ thickness of Al-film which was deposited with slower velocity than 0.6$\AA$/sec. It was coated with ZnS and SiO for Anti-Reflecting. In single coating, ZnS and SiO film had maximum Isc at 570 and 690 A thickness, respectively. We confirmed that these results agreed well with the quarter coating condition; n1d1=λ/4. In double coating, we held the one layer with its optimum thickness in single coating and controlled the other layer. The maximum value of Isc in this case was almost the same with it in single coating but was maintained its value in so wide range of thickness. Keeping the relation; n1d1=n2d2 as another way, we made the total thickness of film thinner to 70-90% of the sum of each optimum thickness in single coating. In this case Isc was higher value than 20% of it in any other previous case and was retained so wide range of thickness.

• Journal of Magnetics
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• v.9 no.2
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• pp.52-59
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• 2004

As deposited and annealed MTJs with the structure of $Ta(5 nm)/Cu(10 nm)/Ta(5 nm)/Ni_{80}Fe_{20}(2 nm)/Cu(5 nm)/ Ir_{25}Mn_{75}(10 nm)/Co_{70}Fe_{30}(2.5 nm)/Al-O/Co_{70}Fe_{30}(2.5nm)/Ni_{80}Fe_{20}(t)/Ta(5nm)/Ni_{80}Fe_{20}(t)/Ta(5 nm)$, where t=10, 30, 60 and 100 nm were characterized by XRD and magnetic hysteresis loops measurements. The XRD measurements were done in grazing incidence $(GID scan-2{\theta})$ and ${\theta}-2{\theta}$ geometry, by rocking curve $(scan-{\omega})$ and pole figures in order to establish correlation between texture and crystallites size and magnetic parameters of exchange biased and interlayer coupling. The variations of shifting and coercivity field of free and pinned layers after annealing in $300^{\circ}C$ correlate with the improvement of ［111］ texture and grains size of $Ni_{80}Fe_{20}$ and $Ir_{25}Mn_{75}$ respectively. The exchange biased and the coercivity fields of the pinned layer linearly increased with increasing grain size of $Ir_{25}Mn_{75}$, The reciprocal proportionality between interlayer coupling and coercivity fields of the free layer and grain size of $Ni_{80}Fe_{20}$ was found. The enhancement of interlayer coupling between pinned and free layers, after annealing treatment, indicates on the correlated in-phase roughness of dipolar interacting interfaces due to increase of crystallites size of $Ni_{80}Fe_{20}$.

• Applied Microscopy
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• v.35 no.4
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• pp.74-83
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• 2005

The ontogeny of pollen wall in Panax ginseng was studied with transmission and scanning electron microscopy from early tetrad stage until pollen maturity. Initial indication of exine development is undulation of plasma membrane for the preparation of bacular mound. The first recognizable structure of the pollen wall is the cellulosic primexine which is formed outside of the plasma membrane while microspore tetrads are still surrounded by callose wall. As development proceeds, foot-layer and baculum differentiation, callose dissolution and exine formation were progressed. During this process, sporopollenin is deposited into the exine, and then endexine development was followed. The intine, innermost pollen wall layer, is developing form hypertrophic Golgi vesicles. The thickness of exine is very even on all along the pollen wall, but intine thickness of apertural region is thicker than that of nonapertural region. Mature pollen of ginseng is $20{\mu}m$ in size, tricolpate and shows fine reticulate sculpturing.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.265-272
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• 2003

This paper describes anodic bonding characteristics of MLCA (Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100%, input power $1\;W/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA and Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-0.08 %FS. Moreover, any damages or separation of MLCA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MLCA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.267-275
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• 2015

In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.262-268
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• 2009

We investigated the properties of inorganic diatomic films like silicon oxide ($SiO_2$) and zinc oxide (ZnO) and their composite films are packed as a passivation layer around Ca cells on glass substrates by using an electron-beam evaporation technique and rf-magnetron sputtering method. When these Ca cells are exposed to an ambient atmosphere, the water vapor penetrating through the passivation layers is adsorbed in the Ca cells, resulting in a gradual progress of transparency in the Ca cells, which can be represented by changes of the optical transmittance in the visible range. Compared with the saturation times for the Ca cells to become completely transparent in the atmosphere, the protection effects against permeation of water vapor are estimated for various passivation films. The thin composite films consist of$SiO_2$ and ZnO are found to show a superior protection effect from water vapor permeation compared with diatomic inorganic films like $SiO_2$ and ZnO. Also, this inorganic thin composite films are also found that their protection effect against permeation of water vapor can be significantly enhanced by choosing their suitable composition ratio and deposition method, in addition, the main factors affecting the permeation of water vapor through the oxide films are found to be the polarizability and the packing density.