• Title/Summary/Keyword: depletion layer

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Low-Voltage Operating N-type Organic Field-Effect Transistors by Charge Injection Engineering of Polymer Semiconductors and Bi-Layered Gate Dielectrics (N형 고분자 반도체의 전하주입 특성 향상을 통한 저전압 유기전계효과트랜지스터 특성 연구)

  • Moon, Ji-Hoon;Baeg, Kang-Jun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.10
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    • pp.665-671
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    • 2017
  • Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.

The analysis of students' ideas about the greenhouse effect (온실효과에 대한 학생들의 개념 분석)

  • Je, Kwi-Youn;An, Hui-Soo
    • Journal of The Korean Association For Science Education
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    • v.19 no.4
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    • pp.585-594
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    • 1999
  • The purpose of this study is to examine the concept of Greenhouse Effect as understood by middle school high school university students using a closed-form questionnaire. Based on results of the questionnaire which was administered to 619, the extent to which alternative concepts were held was quantified and compared the difference of various group based on grade level. gender, text and major. Also, subjects were divided into two groups, one is middle school students and the other is high school university students and common themes within conceptual framework of each group were identified by factor analysis. The result showed that students confused Greenhouse Effect with ozone layer depletion in stratosphere and linked familiar contamination around everyday life. acid rain. radioactive contamination, nuclear arsenal to Greenhouse Effect. These trends were more appreciable in female than male, biology major than any other major and text did not make any significant difference. In addition, the result of factor analysis showed that two groups linked familiar contamination around everyday life to Greenhouse Effect and high school university students understand the consequences of an increase in the Greenhouse Effect more systematically than middle school student, perceived the relation between the origin of an increase in the Greenhouse Effect and human activity but confused Greenhouse Effect with ozone layer depletion in stratosphere.

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3차원적 도핑 분포 측정을 위한 SCM 응용 방법 (The SCM Method for Three-Dimensional Dopant Profiles)

  • Lee Jun-Ha;Lee Hoong-Joo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.1
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    • pp.7-11
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    • 2006
  • Through SCM modeling, we found that the depletion layer in silicon was of a form of a spherical capacitor with the SCM tip biased. Two-dimensional (2D) finite differential method code with a successive over relaxation (SOR) solver has been developed to model the measurements by SCM of a semiconductor wafer that contains an ion-implanted impurity region. Then, we theoretically analyzed the spherical capacitor and determined the total depleted-volume charge Q, capacitance C, and the rate of capacitance change with bias dC/dV. It is very important to observe the depleted carriers' movement in the silicon layer by applying the bias to the tip. So, we calculated the depleted-volume charge, considering different factors such as tip size, oxide thickness, and applied bias (dc+ac), which have an influence on potential and depletion charges.

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Seral Changes in Environmental Factors and Recovery of Soil Fertility during Abandoned Field Succession after Shifting Cultivation (회전 후 묵밭의 식생 천이 진행에 따른 환경요인의 변화와 토양 비옥도의 회복)

  • Lee, Kyu Song;Joon-Ho Kim
    • The Korean Journal of Ecology
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    • v.18 no.2
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    • pp.243-253
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    • 1995
  • Seral changes in environmental factors and recovery of soil fertility during abandoned field succession after shifting cultivation were investigated in eastern Kangwon-Do, Korea. Relative light intensity of herb and shrub layer decreased gradually until 50 years and increased slightly thereafter. Amount of litter and nutrients derived from it were depicted as a parabola form showing the gradual increment during the first 50 years and slight decrease thereafter. Organic matter, pH value, total-N and Mg of soil were plotted as an early depletion-mid pinnacle form showing the extrems depletion during the first 10 years, abrupt increase in about 20 or 50 years and gradual decrease thereafter. Ca, Al, Mn and Na of soil were depicted as a pinnacle form showing the peak in about 20 or 50 years. Thickness and field capacity of soil increased gradually, but K and total-P did not show any tendency as succession proceeded. The soil fertility, overall capacity of soil nutrients and water for plant growth, was plotted as the early depletion-mid pinnacle form.

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Development of the Assessment Framework for the Environmental Impacts in Construction

  • Tahoon Hong;Changwoon Ji;Kwangbok Jeong;Joowan Park
    • International conference on construction engineering and project management
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    • 2013.01a
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    • pp.196-203
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    • 2013
  • Environmental problems like global warming have now become important issues that should be considered in all industries, including construction. In South Korea, many studies have been conducted to achieve the government's goals of reduction in environmental impacts. However, the research on buildings has only focused on CO2 emission as a research target despite the fact that other environmental impacts resulting from ozone depletion and acidification should also be considered, in addition to global warming. In this regard, this study attempted to propose assessment criteria and methods to evaluate the environmental performance of the structures from various aspects. The environmental impact category can be divided into global impacts, regional impacts, and local impacts. First, global impacts include global warming, ozone layer depletion, and abiotic resource depletion, while regional impacts include acidification, eutrophication, and photochemical oxidation. In addition, noise and vibration occurring in the building construction phase are defined as local impacts. The evaluation methods on the eight environmental impacts will be proposed after analyzing existing studies, and the methods representing each environmental load as monetary value will be presented. The methods presented in this study will present benefits that can be obtained through green buildings with a clear quantitative assessment on structures. Ultimately, it is expected that if the effects of green buildings are clearly presented through the findings of this study, the greening of structures will be actively expanded.

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(Oscillation Characteristics in the Intergranular Layer of ZnO Varistor Fabricated 3-Composition Seed Grain Method) (3-성분 종입자법으로 제조한 ZnO 바리스터의 입계모델에서 발진특성)

  • 장경욱;김상진;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.248-252
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    • 1995
  • In this paper, the samples are made by the new three-composition seed grain method, in order to obtain the low voltage varistor distributed randomly large seed grain in its bulk. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

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InGaAs/InP HPT's with ITO Transparent Emitter Contacts (ITO 에미터 투명전극을 갖는 InGaAs/InP HPT의 연구)

  • Han, Kyo-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.268-272
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    • 2007
  • A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.

Effect of Subthreshold Slope on the Voltage Gain of Enhancement Mode Thin Film Transistors Fabricated Using Amorphous SiInZnO

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.5
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    • pp.250-252
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    • 2017
  • High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

Properties for the Behavior of Charged Carrier within the Intergranular Layer of ZnO Varistor Fabricated 3-Composition Seed Grain Method (3-성분 종입자 법으로 제조한 ZnO 바리스터의 입계모델에서 캐리어의 거동 특성)

  • Jang, Kyung-Uk;Lee, Joon-Ung
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1159-1161
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    • 1993
  • This paper may be presented the carrier oscillation properties for the varistor fabricated by a new method of three-composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. However, Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

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Correlation between Capacitance and Structure-optical Properties of Semiconductor with Zero Leakage Current (누설전류 Zero인 반도체 물질의 구조적 광학적 특성과 전도성과의 상관성)

  • Yun, Tae Hwan;Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.3
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    • pp.27-31
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    • 2015
  • It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.